Reflectivity of Mo/Si multilayer systems for EUVL

Louis, Eric; Yakshin, Andrey; Goerts, Peter C.; Abdali, Salim; Maas, Edward L. G.; Stuik, Remko; Bijkerk, F.; Schmitz, D.; Scholze, Frank; Ulm, G.; Haidl, Markus

doi:10.1117/12.351079

Cited by 16 publications

(4 citation statements)

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“…For 13.5 nm wave length, Mo/Si multi-layers have more than 70 % reflectivity for the normal incident reflection [2,3]. Also, the possible precision of the measurement of the shape of the mirror is a few nm.…”

Section: Telescope Designmentioning

confidence: 99%

Evaluation of an ultra-high-precision x-ray optics

Kitamoto

Yamamoto

Kohmura

et al. 2004

UV and Gamma-Ray Space Telescope Systems

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We are developing an ultra high precision soft X-ray telescope. The design of the telescope is a normal incident one for 13.5nm band using Mo/Si multilayers. Two ideas are introduced. One is the optical measurement system in order to monitor the precision of the optics system. The other is the adaptive optics system with a deformable mirror.Using an X-ray-optical separation filter, we can always monitor the deformation of the optics by optical light. With this information, we can control the deformable mirror to compensate the system distortion as a closed loop system.The telescope system is now integrating and checking by optical light. The shape of the primary mirror is an off-axis paraboloid with a focal length of 2m and an effective diameter of 80mm. This primary mirror was coated by Mo/Si multilayers. The reflectivity of the primary mirror at 13.5nm was ranging from 30 to 50 %. The secondary mirror is a basically flat mirror but actually an deformable mirror with 31 piezo-actuators. The detector is now a wave front sensor (shack-hartmann type). The closed loop control has been performed and factor of 2.4 improvement of the wave front shape has been performed comparing to the un-control case.

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Section: Telescope Designmentioning

confidence: 99%

Evaluation of an ultra-high-precision x-ray optics

Kitamoto

Yamamoto

Kohmura

et al. 2004

UV and Gamma-Ray Space Telescope Systems

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“…The mirrors used in EUV lithography systems are coated with Mo=Si multilayer film, and the system throughput strongly depends on the reflectance of this film. [1][2][3][4] A Mo=Si multilayer has reflection bandwidth of typically 0.5 nm around 13.5 nm. The exposure tool has over 10 mirrors of collector optics, illuminator optics, an EUV reflective mask, and imaging optics.…”

Section: Introductionmentioning

confidence: 99%

Extreme-ultraviolet collector mirror measurement using large reflectometer at NewSUBARU synchrotron facility

Iguchi

Hashimoto

Kuki

et al. 2016

Jpn. J. Appl. Phys.

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In extreme-ultraviolet (EUV) lithography, the development of high-power EUV sources is one of the critical issues. The EUV output power directly depends on the collector mirror performance. Furthermore, mirrors with large diameters are necessary to achieve high collecting performance and take sufficient distance to prevent heat and debris from a radiation point of the source. Thus collector mirror development with accurate reflectometer is important. We have developed a large reflectometer at BL-10 beamline of the NewSUBARU synchrotron facility that can be used for mirrors with diameters, thicknesses, and weights of up to 800 mm, 250 mm, and 50 kg, respectively. This reflectometer can measure reflectivity with fully s-polarized EUV light. In this study, we measured the reflectance of a 412-mm-diameter EUV collector mirror using a maximum incident angle of 36°. We obtained the peak reflectance, center wavelength and reflection bandwidth results and compared our results with Physikalisch-Technische Bundesanstalt results.

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“…The wavelength of 13.5nm was chosen because it was found that Mo/Si multilayer mirrors could be fabricated with very high reflectivity (~70%) at this wavelength and stable in time [5][6][7][8]. Many of the sources under consideration use radiation from multicharged xenon ions [9,10] excited by a large number of sources like: the laser produced plasma [11,12], the synchrotron wiggler, Z-pinch [13], plasma focus [14] and capillary discharge produced plasma [9,10,15].…”

Section: Introductionmentioning

confidence: 99%

Observations and analysis of extreme ultraviolet emission by capillary discharge with Xe as target

Zhao

Zhi-liang

et al. 2010

2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics

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The first capillary discharge produced plasma extreme ultraviolet source has been started in China. Fundamental characteristics of DPP including current, Xe gas pressure, extreme ultraviolet energy and spectrum in extreme ultraviolet region have been studied. A high voltage power source is employed, which voltage can be changed from 20kV to 30kV, and the current is from 25kA to 45kA with a FWHM of 120ns. The high voltage is loaded between the capillary which is 3mm in diameter and 12mm in length by injected Xe gas to achieve extreme ultraviolet radiation mostly in the region 10nm~18nm developed in framework of an extreme ultraviolet lithograph program. It is founded that the in-band (13.5nm, 2% bandwidth) energy is increasing with decreasing Xe gas pressure and/or increasing the current in the region 5~10Pa and 25kA~45kA.And 0.56J/2π sr/pulse energy (13.5nm, 2% bandwidth) can be got when the input energy is 47.7J, and the conversion efficiency is 0.56%.

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Reflectivity of Mo/Si multilayer systems for EUVL

Cited by 16 publications

References 0 publications

Evaluation of an ultra-high-precision x-ray optics

Evaluation of an ultra-high-precision x-ray optics

Extreme-ultraviolet collector mirror measurement using large reflectometer at NewSUBARU synchrotron facility

Observations and analysis of extreme ultraviolet emission by capillary discharge with Xe as target

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