For the analysis of fluorine materials and 3d transition metals by soft-x-ray absorption spectroscopy, A new diffraction grating with multilayer coating was installed at the BL-10 beamline of the NewSUBARU synchrotron light source. The target photon energy range of this grating is from 500 eV to 1,000 eV, which includes absorption edges of fluorine and 3d transition metals. The beam intensity of BL-10 in this range was very low due to low reflectance of the diffraction grating for the usage of monochromator. In order to obtaining high reflectance, we developed wideband W/Si multilayer and this multilayer was coated on a new diffraction grating. The reflectance of this multilayer was approximately 13-times higher than that of previous Ni single layer at the fluorine absorption energy edge of 697 eV. The beam intensity at the energy of 697 eV using the new diffraction grating was over 40 times stronger than that using the previous Ni-coated diffraction grating. As the result, using the new diffraction grating, it can be observed that the high-quality absorption spectrum of EUV resist at the absorption edge of fluorine and standard materials of 3d transition metals. The results show that the W/Si multilayer coating significantly improved the performance of the grating at the target energy range.

In extreme-ultraviolet (EUV) lithography, the development of high-power EUV sources is one of the critical issues. The EUV output power directly depends on the collector mirror performance. Furthermore, mirrors with large diameters are necessary to achieve high collecting performance and take sufficient distance to prevent heat and debris from a radiation point of the source. Thus collector mirror development with accurate reflectometer is important. We have developed a large reflectometer at BL-10 beamline of the NewSUBARU synchrotron facility that can be used for mirrors with diameters, thicknesses, and weights of up to 800 mm, 250 mm, and 50 kg, respectively. This reflectometer can measure reflectivity with fully s-polarized EUV light. In this study, we measured the reflectance of a 412-mm-diameter EUV collector mirror using a maximum incident angle of 36°. We obtained the peak reflectance, center wavelength and reflection bandwidth results and compared our results with Physikalisch-Technische Bundesanstalt results.

The advanced feature size patterning process of semiconductor conductor devices was being charged with the important role with development of an information-technology oriented society. Extreme ultraviolet lithography (EUVL) is expected as a leading candidate of the next generation lithography for semiconductor electronic devices. The development of EUV resist which has high resolution, high sensitivity, low LWR, and low out gassing is a second critical issue of the EUVL. Development of the two-beam interference exposure tool using the EUV light has been upgraded for the critical dimension of 10-nm-order in EUV resist patterining process. This tool was installed at the 10.8-nm-long undulator beamline BL09B of NewSUBARU synchrotron radiation facility. Using this EUV interference lithographic method, 15 nm hp resist pattern had been replicated on a silicon wafer. The transmission grating fabrication is the most significant key technology in the EUV interference lithography. The advanced fabrication process is applied for the transmission-grating fabrication for the EUV resist patterning beyond the feature size of 15 nm, such as 12.5 and 10 nm.

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