Wafer-scale two-dimensional (2D) semiconductors with
atomically
thin layers are promising materials for fabricating optic and photonic
devices. Bright-field microscopy is a widely utilized method for large-area
characterization, layer number identification, and quality assessment
of 2D semiconductors based on optical contrast. Out-of-focus microscopic
images caused by instrumental focus drifts contained blurred and degraded
structural and color information, hindering the reliability of automated
layer number identification of 2D nanosheets. To achieve automated
restoration and accurate characterization, deep-learning-based microscopic
imagery deblurring (MID) was developed. Specifically, a generative
adversarial network with an improved loss function was employed to
recover both the structural and color information of out-of-focus
low-quality images. 2D MoS2 grown by the chemical vapor
deposition on a SiO2/Si substrate was characterized. Quantitative
indexes including structural similarity (SSIM), peak signal-to-noise
ratio, and CIE 1931 color space were studied to evaluate the performance
of MID for deblurring of out-of-focus images, with a minimum value
of SSIM over 90% of deblurred images. Further, a pre-trained U-Net model with an average accuracy over 80% was implemented
to segment and predict the layer number distribution of 2D nanosheet
categories (monolayer, bilayer, trilayer, multi-layer, and bulk).
The developed automated microscopic image deblurring using MID and
the layer number identification by the U-Net model
allow for on-site, accurate, and large-area characterization of 2D
semiconductors for analyzing local optical properties. This method
may be implemented in wafer-scale industrial manufacturing and quality
monitoring of 2D photonic devices.