Regimes of leakage current in ALD-processed Al<sub>2</sub>O<sub>3</sub>thin-film layers

Spahr, Holger; Reinker, Johannes; Bülow, Tim; Nanova, Diana; Johannes, Hans‐Hermann; Kowalsky, Wolfgang

doi:10.1088/0022-3727/46/15/155302

Cited by 13 publications

(14 citation statements)

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“…It was observed that the Poole-Frenkel-effect could not be identified as conduction limiting mechanisms, as already proposed in an earlier publication. 8 This was assumed, because the extraction of the relative permittivity from the slope of the linear regression of the data in the Poole-Frenkel-plot resulted in non-realistic values in the most cases. When incorporating the Poole-Frenkel-effect into SCLC, no convergence in the fitting process could be performed, but without the Poole-Frenkel-effect, the data could be fitted, as discussed in the SCLC section.…”

Section: Discussionmentioning

confidence: 99%

“…8 returned a quite well matching approximation in the transition region of the TFL limit, but only when not taking into account the implementation of the Poole-Frenkel-effect as suggested by Takeshita in Ref. 7.…”

Section: Poole-frenkel-effectmentioning

confidence: 94%

“…7 and presented in detail in Ref. 8. The differential equation that had to be solved to fit the data is rewritten here for convenience as…”

Section: Poole-frenkel-effectmentioning

confidence: 99%

“…An application of this modern SCLC model on Al 2 O 3 layers with oxide thicknesses of 6 nm and below, disregarding the Poole-Frenkel-effect, can be found in one of our previous publications. 8 As discussed above, space charge limited current can only occur in the case of an ohmic contact and, thus, a nearly infinite reservoir of injected charge carriers at the electrodes. A developing Schottky-contact prohibits the SCLC.…”

Section: Introductionmentioning

confidence: 99%

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Conduction mechanisms in thin atomic layer deposited Al2O3 layers

Spahr

Montzka

Reinker

et al. 2013

Journal of Applied Physics

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Current conduction mechanisms in atomic-layer-deposited HfO 2 / nitrided SiO 2 stacked gate on 4H silicon carbide Thin Al 2 O 3 layers of 2-135 nm thickness deposited by thermal atomic layer deposition at 80 C were characterized regarding the current limiting mechanisms by increasing voltage ramp stress. By analyzing the j(U)-characteristics regarding ohmic injection, space charge limited current (SCLC), Schottky-emission, Fowler-Nordheim-tunneling, and Poole-Frenkel-emission, the limiting mechanisms were identified. This was performed by rearranging and plotting the data in a linear scale, such as Schottky-plot, Poole-Frenkel-plot, and Fowler-Nordheim-plot. Linear regression then was applied to the data to extract the values of relative permittivity from Schottky-plot slope and Poole-Frenkel-plot slope. From Fowler-Nordheim-plot slope, the Fowler-Nordheim-energy-barrier was extracted. Example measurements in addition to a statistical overview of the results of all investigated samples are provided. Linear regression was applied to the region of the data that matches the realistic values most. It is concluded that ohmic injection and therefore SCLC only occurs at thicknesses below 12 nm and that the Poole-Frenkel-effect is no significant current limiting process. The extracted Fowler-Nordheim-barriers vary in the range of up to approximately 4 eV but do not show a specific trend. It is discussed whether the negative slope in the Fowler-Nordheim-plot could in some cases be a misinterpreted trap filled limit in the case of space charge limited current. V C 2013 AIP Publishing LLC. [http://dx.

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Section: Discussionmentioning

confidence: 99%

Section: Poole-frenkel-effectmentioning

confidence: 94%

“…7 and presented in detail in Ref. 8. The differential equation that had to be solved to fit the data is rewritten here for convenience as…”

Section: Poole-frenkel-effectmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Conduction mechanisms in thin atomic layer deposited Al2O3 layers

Spahr

Montzka

Reinker

et al. 2013

Journal of Applied Physics

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“…These are, for example, the frequency and layer thickness dependent permittivity, 5 the influence of electrode materials on the electrical stability of the dielectric, 1 and mechanisms to increase their breakdown stability 7 and reliability 2,8 and leakage conduction mechanisms. 9 The capacitive areas reported about in the recent literature refer to small capacitive areas significantly below 1 mm 2 , 10,11 or do not give information about the area of the examined capacitive structures. 12,13 Early measurements regarding optimized dielectrics consisting of nanolaminates of HfO 2 and Ta 2 O 5 were performed to optimize the dielectric via capacitance and current-voltage analysis and reported by Kukli et al 14 The following measurements were taken on capacitive areas from 0.2 mm 2 up to 6 mm 2 with a variety of dielectric layer thicknesses in a range from 3 nm up to 300 nm.…”

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confidence: 99%

Enhancement of the maximum energy density in atomic layer deposited oxide based thin film capacitors

Spahr

Nowak

Hirschberg

et al. 2013

Applied Physics Letters

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Articles you may be interested inLow-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si Atomic layer deposition of Al2O3 and AlxTi1−xOy thin films on N2O plasma pretreated carbon materials J. Vac. Sci. Technol. A 31, 01A135 (2013); 10.1116/1.4769793 Degradation analysis and characterization of multifilamentary conduction patterns in high-field stressed atomiclayer-deposited TiO2/Al2O3 nanolaminates on GaAs J. Appl. Phys. 112, 064113 (2012); 10.1063/1.4754510 Plasma-assisted atomic layer deposition of TiN / Al 2 O 3 stacks for metal-oxide-semiconductor capacitor applications

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Atomic Layer Deposition of TiO_x/Al₂O₃ Bilayer Structures for Resistive Switching Memory Applications

Zhang

Aslam

Reiners

et al. 2014

Chemical Vapor Deposition

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The resistive switching (RS) properties of a thin Al2O3 layer and TiOx/Al2O3 bilayers integrated into TiN/metal oxide/Pt crossbar devices are investigated for future memristive device (ReRAM) applications. The oxide bilayer stack is realized in consecutive atomic layer deposition (ALD) processes at 300 °C without any post‐annealing step. Stoichiometric Al2O3 and oxygen‐deficient TiOx thin films are grown from dimethylaluminum isopropoxide [DMAI: (CH3)2AlOCH(CH3)2] and tetrakis‐dimethlyamido‐titanium [TDMAT: Ti(N(CH3)2)4], respectively, as the metal sources, and water as the oxygen source. High insulating characteristics are confirmed for as‐grown amorphous Al2O3 films with a dielectric permittivity of 8.0 and disruptive field strength of about 7 MV cm−1, whereas the oxygen‐deficient TiOx shows semiconducting behavior. The bipolar‐type RS characteristics of TiN/TiOx/Al2O3/Pt cells show a strong dependence on both oxide layer thicknesses. A stable OFF/ON state resistance ratio of about 105 is obtained for the bilayer structure of 5 nm TiOx and 3.7 nm Al2O3.

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Regimes of leakage current in ALD-processed Al₂O₃thin-film layers

Cited by 13 publications

References 13 publications

Conduction mechanisms in thin atomic layer deposited Al2O3 layers

Conduction mechanisms in thin atomic layer deposited Al2O3 layers

Enhancement of the maximum energy density in atomic layer deposited oxide based thin film capacitors

Atomic Layer Deposition of TiO_x/Al₂O₃ Bilayer Structures for Resistive Switching Memory Applications

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Regimes of leakage current in ALD-processed Al2O3thin-film layers

Cited by 13 publications

References 13 publications

Conduction mechanisms in thin atomic layer deposited Al2O3 layers

Conduction mechanisms in thin atomic layer deposited Al2O3 layers

Enhancement of the maximum energy density in atomic layer deposited oxide based thin film capacitors

Atomic Layer Deposition of TiOx/Al2O3 Bilayer Structures for Resistive Switching Memory Applications

Contact Info

Product

Resources

About

Regimes of leakage current in ALD-processed Al₂O₃thin-film layers

Atomic Layer Deposition of TiO_x/Al₂O₃ Bilayer Structures for Resistive Switching Memory Applications