Regularly-patterned nanorod light-emitting diode arrays grown with metalorganic vapor-phase epitaxy

Tu, Charng-Gan; Su, Chia-Ying; Liao, Che‐Hao; Hsieh, Chieh; Yao, Yufeng; Chen, Hao-Tsung; Lin, Ching‐Hsuan; Chen, Horng-Shyang; Kiang, Yean‐Woei; Yang, C. C.

doi:10.1016/j.spmi.2015.03.050

Cited by 10 publications

(10 citation statements)

References 55 publications

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“…Because high Mg flow rates lead to considerable lateral growth behaviors, the growth of highly elongated p‐type GaN nanorods may be difficult to achieve in a selective epitaxial manner using MOCVD . In addition, the growth of the outermost p‐GaN shell layer around the n‐GaN core structure (i.e., p‐on‐n type contact) commonly results in a change of the equilibrium shapes from nonpolar to semipolar planes as well as in huge thickness variations between the bottom and the top regions . Because dopant incorporation is in part governed by the surface orientation, controlled growth of the p‐type GaN shell or core structures may enable uniform current injection in 3D devices .…”

Section: Introductionmentioning

confidence: 99%

Selective‐area growth of doped GaN nanorods by pulsed‐mode MOCVD: Effect of Si and Mg dopants

Bae

Lekhal

Lee

et al. 2017

Physica Status Solidi (b)

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Injecting current with a uniform carrier concentration is important for applications with three‐dimensional architectures such as vertical power devices or displays. In III‐nitride nanostructures, dopants not only incorporate differently depending on the surface orientation but can also seriously affect the kinetic equilibrium shapes of the nanorods. Herein, we report selective‐area growth of doped GaN nanorods grown by pulsed‐mode metalorganic chemical vapor deposition. Two dopants, Si and Mg, were employed as donor and acceptor atoms, respectively, for a mono‐doping approach. Furthermore, a mixed flow of Si and Mg was supplied for a co‐doping approach. We compared the morphological effects and growth rates of each doped GaN nanorod array. Then, we proposed appropriate growth mechanisms for the doped GaN nanorods on the basis of our structural characterizations. These results might extend the morphological functionality of GaN nanorods by including doping and may also provide an appropriate foundation for the design of nanostructure‐based electronic or photonic devices.

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Section: Introductionmentioning

confidence: 99%

Selective‐area growth of doped GaN nanorods by pulsed‐mode MOCVD: Effect of Si and Mg dopants

Bae

Lekhal

Lee

et al. 2017

Physica Status Solidi (b)

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“…5, it was revealed that this sharp peak in In content was due to the much higher growth rate in the c-plane direction for InGaN QWs than at the semi-polar planes also observed by Tu. C.G et al 51 . The initial CL measurements of the close packed nanorod arrays shows the blue emission is coming from the semi-polar planes and not from the nanotips as seen in the emission spectrum highlighted in blue in Fig.…”

Section: Resultsmentioning

confidence: 99%

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

Conroy¹,

Kusch

et al. 2016

Nanoscale

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We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates

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“…It is expected that the active region will have InGaN wells of ∼2 nm thickness and GaN barriers of ∼3 nm thickness. As shown in Figure b, to see the different growth effects of p-GaN nanocrystals, a nanohole-patterned Ti mask layer was used to fabricate the identical diameter of the InGaN-active region on the n-GaN nanowire. , The nanohole patterning process followed the next steps. (See the Experimental Section.)…”

Section: Results and Discussionmentioning

confidence: 99%

Understanding the p-Type GaN Nanocrystals on InGaN Nanowire Heterostructures

Lee

2019

ACS Photonics

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The efficiency of semiconductor light-emitting diodes (LEDs) has been largely limited by the extremely inefficient p-type conduction on InGaN heterostructures. Here we report highly efficient p-type GaN nanocrystals fabricated by p–i–n nanowire heterostructures using selective area epitaxial growth (SAG). With the different Mg-doping growth conditions in the p-GaN nanostructure, different structure formations and various Mg incorporations were confirmed by detailed scanning electron microscopy and cathodoluminescence analysis. The growth mechanism of p-GaN nanocrystal formation on nanowire structures was also suggested by CL mapping measurements. Single nanowire LEDs exhibited different current–voltage behaviors from various p-GaN nanocrystal formations. The resulting p-contacted InGaN/GaN nanowire LEDs showed a low turn-on voltage (∼2.3 V), reduced resistance, and enhanced electroluminescence intensity at 532 nm wavelength, which is very important for realizing high-efficiency InGaN LEDs operating in the green and red wavelength ranges. This demonstration provides important insight into the fundamental formation characteristics of p-GaN nanocrystals on the nanowire heterostructure and also offers a viable path for realizing multifunctional nanoscale photonic and electronic devices.

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Regularly-patterned nanorod light-emitting diode arrays grown with metalorganic vapor-phase epitaxy

Cited by 10 publications

References 55 publications

Selective‐area growth of doped GaN nanorods by pulsed‐mode MOCVD: Effect of Si and Mg dopants

Selective‐area growth of doped GaN nanorods by pulsed‐mode MOCVD: Effect of Si and Mg dopants

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

Understanding the p-Type GaN Nanocrystals on InGaN Nanowire Heterostructures

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