Selective‐area growth of doped GaN nanorods by pulsed‐mode MOCVD: Effect of Si and Mg dopants

Abstract

Injecting current with a uniform carrier concentration is important for applications with three‐dimensional architectures such as vertical power devices or displays. In III‐nitride nanostructures, dopants not only incorporate differently depending on the surface orientation but can also seriously affect the kinetic equilibrium shapes of the nanorods. Herein, we report selective‐area growth of doped GaN nanorods grown by pulsed‐mode metalorganic chemical vapor deposition. Two dopants, Si and Mg, were employed as donor and acceptor atoms, respectively, for a mono‐doping approach. Furthermore, a mixed flow of Si and Mg was supplied for a co‐doping approach. We compared the morphological effects and growth rates of each doped GaN nanorod array. Then, we proposed appropriate growth mechanisms for the doped GaN nanorods on the basis of our structural characterizations. These results might extend the morphological functionality of GaN nanorods by including doping and may also provide an appropriate foundation for the design of nanostructure‐based electronic or photonic devices.

Enhanced radial growth of Mg doped GaN nanorods: A combined experimental and first-principles study

“…A similar increase in the radial growth in the case of Mg-GaN NRs with the increase in Mg incorporation has been reported by Zhang et al [19] and Andrews et al [20]. However, Bae et al [21] reported a variation of the height of NRs due to higher Mg flux instead of promoting vertical growth. Moreover, no convincing evidence for the origin of increased radial growth in MBE grown Mg-GaN NRs has been reported yet.…”

Efficient Carrier Recombination in InGaN Pyramidal µ-LEDs Obtained through Selective Area Growth

“…As a typical example of a bottom-up technique, selective area growth (SAG) of µ-LEDs in the form of rods or disks offers great benefits, including an enhanced surface area for light extraction and a smooth surface morphology. Furthermore, the SAG technique can effectively reduce the threading dislocation density, which is blocked by a SiO x or SiN x mask [9][10][11][12][13]. Last of all, biaxial strain stemming from the thermal expansion and lattice mismatch during the heteroepitaxial growth can also be relieved during SAG, contributing to lower internal polarization [14][15][16].…”

Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate

“…As a typical bottom-up growth technique, selective area growth (SAG) of III-nitride rods or hexagonal disks on sapphire substrate has been reported before by numerous researchers [10]. It was demonstrated that SAG technique can effectively reduce the defect density since a large portion of the microdisk is grown laterally on SiO 2 mask, blocking threading dislocations stemming from the underlying GaN or sapphire template.…”