Relationship between implantation damage and electrical activation in gallium arsenide implanted with Si+

Abstract

The relationship between implantation damage and electrical activation has been investigated in GaAs implanted with 100-keV 30Si+ to doses of 5×1013/cm2 and 2×1014/cm2, using low and moderate beam currents at room temperature (RT) and at slightly elevated temperatures. For a given Si+ dose, the damage, measured by ion channeling immediately after implantation, was varied by more than a factor of 2 over the range of conditions studied. A strong negative correlation was established between this damage and the electrical activation obtained after high-temperature annealing, i.e., an increase in the initial damage led to a decrease in the sheet-carrier concentration. The results demonstrate a scheme for increasing the sheet-carrier concentration beyond that typically obtained for high-dose Si in GaAs, namely, by using a slightly elevated implant temperature (∼90 °C for a beam current of 1 μA/cm2). In addition, the initial damage is shown to consist of two components; one that is stable at RT and another that is not. The sheet-carrier concentration was found to be affected only by that component of the damage that is stable at RT, although both components were reduced by increasing the implant temperature or by reducing the dose rate.

Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As

“…9 Elevated implantation temperatures from 80-300 • C are generally sufficient to avoid amorphization with the high dose implants needed for source/drain doping and the use of lighter implant species can further reduce implant damage. [10][11][12][13][14][15][16][17][18] Fig. 1 Shows post-anneal damage resulting from non-amorphizing and amorphizing implants in InGaAs from Lind et al 19 Si and S are both more suitable species for high dose n-type implants into GaAs, InGaAs and InAs since these species will result in less implant damage relative to heavier species such as Se, Sn and Te which cause amorphization at lower doses.…”

“…[10][11][12][13][14][15][16][17][18] Fig. 1 Shows post-anneal damage resulting from non-amorphizing and amorphizing implants in InGaAs from Lind et al 19 Si and S are both more suitable species for high dose n-type implants into GaAs, InGaAs and InAs since these species will result in less implant damage relative to heavier species such as Se, Sn and Te which cause amorphization at lower doses.…”

A study of the evolution of carrier and vacancy depth profiles with annealing temperature of Si-implanted GaAs

“…The most commonly used n-type dopant is silicon because of its light mass and consequently low damage introduction rate. The amphoteric nature of Si results in the net carrier concentration being determined by the fraction of Si atoms occupying gallium sites as opposed to As sites, consequently the implantation dose, dose rate and subsequent annealing temperature have a strong effect on the activation [4][5][6].…”

Direct observation of the amphoteric behavior of Ge in InP modified by P co-implantation

“…1- 11 They can either substitute the group III or V sublattice and become donors or acceptors, respectively. Recently a number of studies have been carried out to investigate the amphoteric substitution of Ge inInP.…”