Relative influence of grain boundaries and intragrain defects on the photocurrents obtained with bridgman polysilicon

Amzil, H.; Zehaf, M.; Crest, J.P.; Psaila, E.; Martinuzzi, S.; Oualid, J.

doi:10.1016/0379-6787(83)90066-2

Cited by 8 publications

(4 citation statements)

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“…recombination velocity, the grain doping level... The dispersion of the experimental results concerning the measurements of the short-circuit photocurrent as a function of the effective diffusion length [3,6] must not be only ascribed to experiment errors ; it can be at least partly explained by this theoretical result.…”

Section: Base Doping Concentration Influence -mentioning

confidence: 99%

“…Polycrystalline silicon is different from monocrystalline silicon essentially due to the presence of grain boundaries (gb) which act as recombination centres for excess carriers [1,2] and which contribute to a marked decrease of solar cell efficiencies [3][4][5][6]. The gb recombination of the excess carriers takes place via the gb interface states which can be due to the dangling bonds, the dislocations, or the impurities segregated or diffused into the grain boundaries.…”

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confidence: 99%

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3D-Modelling of polycrystalline silicon solar cells

Dugas¹,

Oualid²

1987

Rev. Phys. Appl. (Paris)

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2014 Nous nous intéressons à l'influence des joints de grains sur les principaux paramètres qui caractérisent les photopiles en silicium polycristallin. Nous calculons la vitesse de recombinaison effective à l'aide d'une méthode auto-consistante qui tient compte de la courbure du quasi-niveau de Fermi des minoritaires dans la région de charge d'espace associée au joint et dans la région quasi neutre des grains. En nous basant sur cette étude, nous avons tracé à l'aide d'un modèle à 3 dimensions une série d'abaques qui permettent de prévoir les variations des propriétés photovoltaïques en fonction des grandeurs caractéristiques d'un matériau semiconducteur polycristallin : dimension g des grains, longueur de diffusion Ln et dopage NA des grains et vitesse de recombinaison interfaciale S aux joints de grains. Nous montrons que le rendement peut être augmenté en ajustant le dopage de la base des photopiles. Le dopage optimum est donné en fonction de la densité des états d'interface et de la dimension des grains. Enfin, nous définissons une longueur de diffusion effective dans un matériau polycristallin prenant en compte la recombinaison aux joints de grains.

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Section: Base Doping Concentration Influence -mentioning

confidence: 99%

mentioning

confidence: 99%

3D-Modelling of polycrystalline silicon solar cells

Dugas¹,

Oualid²

1987

Rev. Phys. Appl. (Paris)

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“…Therefore, in the past years, research effort has primarily been devoted to tailoring grain boundaries (GBs) for favorable defect properties and phase distribution. Nevertheless, the fundamental behaviors and effects of intragrain defects and impurities have been rarely studied, although they have been known essential to semiconductors in general 15,16 . One major hurdle in this research direction is to reliably image the microstructure and dynamics of intragrain defects and impurities in perovskites 3,[17][18][19][20] .…”

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confidence: 99%

Intragrain impurity annihilation for highly efficient and stable perovskite solar cells

Cai,

Li,

Zhang

et al. 2024

Nat Commun

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Intragrain impurities can impart detrimental effects on the efficiency and stability of perovskite solar cells, but they are indiscernible to conventional characterizations and thus remain unexplored. Using in situ scanning transmission electron microscopy, we reveal that intragrain impurity nano-clusters inherited from either the solution synthesis or post-synthesis storage can revert to perovskites upon irradiation stimuli, leading to the counterintuitive amendment of crystalline grains. In conjunction with computational modelling, we atomically resolve crystallographic transformation modes for the annihilation of intragrain impurity nano-clusters and probe their impacts on optoelectronic properties. Such critical fundamental findings are translated for the device advancement. Adopting a scanning laser stimulus proven to heal intragrain impurity nano-clusters, we simultaneously boost the efficiency and stability of formamidinium-cesium perovskite solar cells, by virtual of improved optoelectronic properties and relaxed intra-crystal strain, respectively. This device engineering, inspired and guided by atomic-scale in situ microscopic imaging, presents a new prototype for solar cell advancement.

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“…We have previously shown that effective diffusion lengths in polysilicon are dependent on grain boundary and dislocation densities [8], and also that in large grained materials the influence of intragrain defects becomes predominant, when their density is sufficiently large. Dislocations and grain boundaries can act as efficient recombination sites and it is believed that the structure of high angle grain boundaries may be described in terms of a dense array of lattice dislocations [9].…”

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confidence: 99%