Reliability Evaluation of Class-E and Class-A Power Amplifiers With Nanoscaled CMOS Technology

Lin, Wei‐Cheng; Wu, Tzong‐Yuan; Tsai, Yi-Hung; Du, Long-Jei; King, Ya‐Chin

doi:10.1109/ted.2005.850639

Cited by 25 publications

(9 citation statements)

References 18 publications

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“…6 it is also clear that the output power drops for all PAs during testing, however for PA 5 we can observe an increase in drain current of about 10%, which could be explained by an increased gate leakage from gate to drain [7]. For PA 2 and PA 4 a decrease in drain current of 5% was observed, which could be explained by a shift in V t due to hot-carrier stress [7].…”

Section: Discussionmentioning

confidence: 81%

Reliability study of a low-voltage Class-E power amplifier in 130nm CMOS

Fritzin

Sundström

Johansson

et al. 2010

Proceedings of 2010 IEEE International Symposium on Circuits and Systems

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This paper presents reliability measurements of a differential Class-E power amplifier (PA) operating at 850MHz in 130nm CMOS. The RF performance of five samples was tested. At 1.1V, the PAs deliver +20.4-21.5dBm of output power with drain efficiencies and power-added efficiencies of 56-64% and 46-51%, respectively. After a continuous long-term test of 240 hours at elevated supply voltage of 1.4V, the output power dropped about 0.7dB.

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Section: Discussionmentioning

confidence: 81%

Reliability study of a low-voltage Class-E power amplifier in 130nm CMOS

Fritzin

Sundström

Johansson

et al. 2010

Proceedings of 2010 IEEE International Symposium on Circuits and Systems

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“…However, when a class-E amplifier is in offstate (gate at ground), the drain voltage may peak at values up to 3.5 times the supply voltage, creating a high field at the oxide edge between the gate and the drain [79], [135].…”

Section: Pa Reliability Concernsmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and state-of-the-art results in the literature. To reach watt-level output power from a single-chip CMOS PA, two main strategies can be identified: use of high supply voltage, and use of matching and power combination. High supply voltage limits are closely related to device design in the fabrication process. However, the maximum operating voltage can be improved by amplifier class selection, circuit solutions, and process modifications or mask changes. High output power can also be reached by the use of on-chip matching and power combination, commonly using on-chip transformers. Reliability often sets the limits for the PA design, and PA degradation mechanisms are reviewed. A compilation of state-of-the-art published results for linear and switched wattlevel PAs, as well as a few fully integrated CMOS PAs, is presented and discussed.

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“…For the oscillators, the phase noise increases and tuning range decreases after channel hot electron stress [18]. For the RF power amplifiers, the class-E amplifier degrades faster than the class A amplifier due to a much higher level of stress on gate oxide in class E amplifier during switching [19]. The output power and power-added efficiency of class AB power amplifier degrade significantly after hot electron effect [20].…”

Section: Introductionmentioning

confidence: 99%

“…The output power and power-added efficiency of class AB power amplifier degrade significantly after hot electron effect [20]. In the above publications in [18,19], however, the RF circuit degradations were evaluated under DC hot electron stress. For practical circuit operation, VCOs and power amplifiers are operating under large-signal RF excitation.…”

Section: Introductionmentioning

confidence: 99%

“…For practical circuit operation, VCOs and power amplifiers are operating under large-signal RF excitation. Although hot electron effect on VCO performance has been examined in n-channel VCOs [19,21], the NBTI effect on the current reused VCO, which consists of both the nchannel and p-channel transistors, has not been examined by experiment. This motivates us this study.…”

Section: Introductionmentioning

confidence: 99%

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