Reliability study of a low-voltage Class-E power amplifier in 130nm CMOS

Fritzin, Jonas; Sundström, Timmy; Johansson, Tim; Alvandpour, Atila

doi:10.1109/iscas.2010.5537959

Cited by 10 publications

(2 citation statements)

References 11 publications

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“…In [124], a test time of 168 hours at elevated supply voltage was considered to cover more than five years of reliable product use for WLAN. The required lifetime should be put in relation to the employed standard and expected use case [137]. A GSM mobile phone used for four hours a day during 18 months corresponds to only 275 hours of continuous PA operation, since 2G GSM has a 12.5% duty cycle)…”

Section: Pa Reliability Concernsmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and state-of-the-art results in the literature. To reach watt-level output power from a single-chip CMOS PA, two main strategies can be identified: use of high supply voltage, and use of matching and power combination. High supply voltage limits are closely related to device design in the fabrication process. However, the maximum operating voltage can be improved by amplifier class selection, circuit solutions, and process modifications or mask changes. High output power can also be reached by the use of on-chip matching and power combination, commonly using on-chip transformers. Reliability often sets the limits for the PA design, and PA degradation mechanisms are reviewed. A compilation of state-of-the-art published results for linear and switched wattlevel PAs, as well as a few fully integrated CMOS PAs, is presented and discussed.

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Section: Pa Reliability Concernsmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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“…However, it is worth noting that existing literatures on class-E PA reliability are mainly focused on the gate oxide stress, hot-carrier stress, voltage stress and radio frequency (RF) stress (Mazzanti et al, 2006;Song et al, 2010;Yuan et al, 2012;Larcher et al, 2006;Apotolidou et al, 2009;Fritzin et al, 2010;Lin et al, 2005;Lin et al, 2004). Furthermore, the high-efficiency and switch-mode operation are the major characteristics for the class-E PA in wireless communication application, which are extremely vulnerable and sensitive to the variation of temperature (Akita et al, 2001).…”

Section: Introductionmentioning

confidence: 99%

Study of temperature reliability for a parallel high-efficiency class-E power amplifier

Lin

Wu²,

2017

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Purpose The purpose of this paper is to investigate the temperature reliability for a parallel high-efficiency class-E power amplifier (PA). Design/methodology/approach To explore the relationship between temperature and direct current (DC) characteristics, output power, S parameters and efficiency of the PA quantitatively, a series of reliability experiments have been designed and conducted to study the temperature reliability for this PA. Findings From the results, the prominent performance degradation even failure is found during the testing. Furthermore, the thermal shock test can cause permanent failure, which is a great threat for PA. Research limitations/implications Therefore, to ensure the good performance, the influence of temperature on PA reliability should be carefully considered during the stage of PA design. Practical implications All these can provide important guidance for the reliability design of PA. Social implications All these can give some important guidance for PA application. Originality/value In addition, PA is usually designed according to the electrical properties at the room temperature. From the results above, it can be concluded that it may be unable to satisfy the performance requirement at high temperature. In turn, if it is designed according to the electrical properties at low temperature, the transistor often works in the super-saturated state, the reliability of PA will become the new problem. Therefore, to ensure the good performance, the influence of temperature on PA reliability should be carefully considered during the design.

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Design and Temperature Reliability Testing for A 0.6–2.14GHz Broadband Power Amplifier

Lin

Cheng

et al. 2016

J Electron Test

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Reliability study of a low-voltage Class-E power amplifier in 130nm CMOS

Cited by 10 publications

References 11 publications

A Review of Watt-Level CMOS RF Power Amplifiers

A Review of Watt-Level CMOS RF Power Amplifiers

Study of temperature reliability for a parallel high-efficiency class-E power amplifier

Design and Temperature Reliability Testing for A 0.6–2.14GHz Broadband Power Amplifier

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