Reliability of gate dielectrics and metal–insulator–metal capacitors

Martin, Andreas

doi:10.1016/j.microrel.2004.11.036

Cited by 3 publications

(2 citation statements)

References 44 publications

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“…In integrated circuits, Metal-Insulator-Metal (MIM) and Metal-Oxide-Metal (MOM) capacitors have superior frequency characteristics and quality factors. [1][2][3][4][5][6][7][8][9][10] They are independent of bias voltage as these are simply composed of an insulator sandwiched with two metal plates. However, these passive elements tend to require a large chip area.…”

Section: Introductionmentioning

confidence: 99%

Analysis and simulation of MOSFET-based gate-voltage-independent capacitor

Ojima

et al. 2022

Jpn. J. Appl. Phys.

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In this paper, we analyze the gate capacitance of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and propose a method of realizing the capacitance less dependent on the gate voltage. We analyze the mechanism of capacitance formation in the cases of shorting the source and drain to the ground and floating them. The analysis also reveals the influence of channel length on gate capacitance. By ﬂoating the terminals of source and drain and tuning for an optimum channel length, the voltage dependence of the gate capacitance can be largely reduced. Simulation results verify our analysis, suggesting a possibility of applying a MOSFET capacitor for sample-and-hold circuits which has been applied to the standard-cell-based successive approximation analog-to-digital converter).

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Section: Introductionmentioning

confidence: 99%

Analysis and simulation of MOSFET-based gate-voltage-independent capacitor

Ojima

et al. 2022

Jpn. J. Appl. Phys.

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“…Many researches have studied on the dielectric breakdown mechanism of SiO 2 thin film (Martin, 2005). Several studies for the dielectric breakdown at the viewpoint of fundamental mechanics are conducted.…”

Section: Introductionmentioning

confidence: 99%

Application of J integral to breakdown analysis of a dielectric material

Beom

Kim

2008

International Journal of Solids and Structures

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a b s t r a c tProperties of the J integral for a conductive tubular channel embedded in a dielectric material are examined. It is shown that the J integral can be interpreted as the energy release per unit length of the channel due to the channel growth. In order to investigate the effect of a conductive defect on the dielectric breakdown, the asymptotic problem of a conductive hemispheroid on an electrode sheet is considered. The J integral for the hemispheroidal defect is obtained in the closed form from the electrostatic solution. The J integral for a tubular channel with a hemispheroidal head is calculated numerically through the finite element analysis. It is found that the breakdown strength is sensitive to the length and head shape of the channel. The variation of the apparent breakdown strength for the dielectric material with the conductive hemispheroidal defect is also discussed.

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