Reliability study of parasitic source and drain resistances of InP-based HEMTs

Suemitsu, Tetsuya; Fukai, Yoshino K.; Sugiyama, Hiroki; Watanabe, Kenji; Yokoyama, Haruki

doi:10.1109/iedm.2000.904290

Cited by 5 publications

(11 citation statements)

References 10 publications

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“…The layers in the heterostructure are significantly thinner than previously studied devices that did not feature the InP etch stop [6]. In contrast with conventional InP HEMTs, these devices feature a WSiN-Ti-Pt-Au gate stack and an InP gate recess etch-stop layer in the intrinsic heterostructure [1]. The WSiN layer is 100 nm thick and is introduced to enhance the thermal reliability of the devices [11].…”

Section: Methodsmentioning

confidence: 95%

“…Most of the emphasis in this paper has been placed on the threshold voltage which is defined at a drain-to-source voltage V and a drain current mA/mm above leakage. The studied devices had gate lengths between 30 nm and 1 m [1]. The devices have been designed and optimized for the gate orientation, but there were also devices along the [011] direction.…”

Section: Methodsmentioning

confidence: 99%

“…Since the Ti-layer is believed to be the source of the stress, the introduction of other metal such as WSiN at the bottom of the gate stack is expected to mitigate H sensitivity by separating the Ti-layer from the heterostructure. However, to date, no data Cross section of InP HEMT studied in this paper [1], [11].…”

Section: Introductionmentioning

confidence: 94%

“…T HE goal of this paper is to study the hydrogen (H) sensitivity of state-of-the-art InAlAs-InGaAs high-electron mobility transistors (HEMTs) specifically designed for ultrahigh speed optical fiber communication systems [1]. H degradation has been identified as a reliability concern in III-V MESFETs [2] and HEMTs [3].…”

Section: Introductionmentioning

confidence: 99%

“…The goal of this paper is to study the H sensitivity of InP HEMTs with a WSiN-Ti-Pt-Au gate stack [1] and to compare it to that of more conventional Ti-Pt-Au gate stack designs. The work presented in this paper is an updated and expanded version of preliminary results in [5].…”

Section: Introductionmentioning

confidence: 99%

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Hydrogen Sensitivity of InP HEMTs With WSiN-Based Gate Stack

Mertens

Alamo

Suemitsu

et al. 2005

IEEE Trans. Electron Devices

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Abstract-We have experimentally investigated the hydrogen sensitivity of InP high-electron mobility transistors (HEMTs) with a WSiN-Ti-Pt-Au gate stack. We have found that exposure to hydrogen produces a shift in the threshold voltage of these devices that is one order of magnitude smaller than published data on conventional Ti-Pt-Au gate HEMTs. We have studied this markedly improved reliability through a set of quasi-two-dimensional mechanical and electrostatic simulations. These showed that there are two main causes for the improvement of the hydrogen sensitivity. First, the separation of the Ti-layer from the semiconductor by a thick WSiN layer significantly reduces the stress in the heterostructure underneath the gate. Additionally, the relatively thinner heterostructure used in this study and the presence of an InP etch-stop layer with a small piezoelectric constant underneath the gate reduces the amount of threshold voltage shift that is caused by the mechanical stress.Index Terms-High-electron mobility transistors (HEMTs), hydrogen, InP, piezoelectric effect, reliability.

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Section: Methodsmentioning

confidence: 95%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Hydrogen Sensitivity of InP HEMTs With WSiN-Based Gate Stack

Mertens

Alamo

Suemitsu

et al. 2005

IEEE Trans. Electron Devices

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Stable and uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s optical communication systems

Takahashi

Nihei

Makiyama

et al.

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)

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Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack

Mertens

Alamo

Suemitsu

et al.

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)

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We have experimentally investigated the hydrogen sensitivity of InP high-electron mobility transistors (HEMTs) with a WSiN-Ti-Pt-Au gate stack. We have found that exposure to hydrogen produces a shift in the threshold voltage of these devices that is one order of magnitude smaller than published data on conventional Ti-Pt-Au gate HEMTs. We have studied this markedly improved reliability through a set of quasi-two-dimensional mechanical and electrostatic simulations. These showed that there are two main causes for the improvement of the hydrogen sensitivity. First, the separation of the Ti-layer from the semiconductor by a thick WSiN layer significantly reduces the stress in the heterostructure underneath the gate. Additionally, the relatively thinner heterostructure used in this study and the presence of an InP etch-stop layer with a small piezoelectric constant underneath the gate reduces the amount of threshold voltage shift that is caused by the mechanical stress.

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Reliability study of parasitic source and drain resistances of InP-based HEMTs

Cited by 5 publications

References 10 publications

Hydrogen Sensitivity of InP HEMTs With WSiN-Based Gate Stack

Hydrogen Sensitivity of InP HEMTs With WSiN-Based Gate Stack

Stable and uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s optical communication systems

Hydrogen sensitivity of InP HEMTs with WSiN-based gate stack

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