Reliable and Uniform Thin‐Film Transistor Arrays Based on Inkjet‐Printed Polymer Semiconductors for Full Color Reflective Displays

Lee, Jiyoul; Kim, Do Hwan; Kim, Joo Young; Yoo, Byung Woo; Chung, Jong Won; Park, Jeong Il; Lee, Bang Lin; Jung, Ji Young; Park, Joon Seok; Koo, Bonjae; Im, Seongil; Kim, Jung Ho; Song, Byungkwon; Jung, Myung Hoon; Jang, Jae Eun; Jin, Yong; Lee, Sang Yoon

doi:10.1002/adma.201301257

Cited by 64 publications

(29 citation statements)

References 33 publications

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“…Since then, enormous progress has been made in the macromolecular engineering of the !-conjugated polymers and in their uses as active materials in polymeric light-emitting diodes (PLEDs) [2][3][4][5][6]. These polymers are promising organic analogues of inorganic semi-conducting materials, and their exploitation in other electronic devices, such as thin-film transistors [7,8], photovoltaic cells [9,10], chemical sensors [11] and organic lasers [12] are currently expanding. The main advantages of using such functional polymers lie in their low production cost and easy processibility.…”

Section: Introductionmentioning

confidence: 99%

New poly(p-phenylenevinylene) derivatives containing isosorbide unit in the side-chain

Zrida¹,

Hriz²,

Jaballah³

et al. 2014

Express Polym. Lett.

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Abstract. New conjugated PPV derivatives containing the chiral isosorbide group (P1-3) have been synthesized via the Gilch reaction. The polymers are optically active, soluble in common organic solvents and show good film-forming abilities. High number-average molecular weights were determined by size exclusion chromatography (SEC) (16·10 3 -21·10 3 g·mol -1 ). The molecular structures of the polymers were confirmed by nuclear magnetic resonance (NMR) and Fourier transform infrared (FTIR) spectroscopies. Thermogravimetric analysis of the polymers showed good thermal stability up to 320°C. The optical properties of these !-conjugated materials were investigated by UV-vis absorption and photoluminescence (PL) spectroscopies. The polymers show a yellow fluorescence in dilute solution, and an orange emission is observed in thin films. The introduction of the polar isosorbide groups improved the PL intensity, and quantum yields between 50 and 73% were obtained. The HOMO-LUMO energy levels were estimated by cyclic voltammetry, and the electrochemical gaps were 1.81, 1.83 and 2.48 eV for P1, P2 and P3, respectively. Single-layer diode devices were fabricated and show relatively low turn-on voltages between 3.1 and 3.4 V. Vol.8, No.10 (2014) 709-722 Available online at www.expresspolymlett.com DOI: 10.3144/expresspolymlett.2014.74 * Corresponding author, e-mail: mustapha.majdoub@fsm.rnu.tn © BME-PT insoluble in common organic solvents. This intractability has been addressed by chemically attaching aliphatic side-chains to the polymer backbone [19]. Hence, many PPV-type architectures are processed in a derivative form. The effects of the side-group structure on the opto-electronic properties have been extensively investigated [20]. However, most studies have involved nonpolar sidechains, and the effect of relatively polar side-groups was rarely reported (e.g PPV derivative containing ethylene oxide-type side chains) [12]. Here, we report the first PPV derivatives containing the polar and chiral isosorbide groups. In fact, the incorporation of chiral groups in polypyrroles and polythiophenes was reported. These groups confer original physico-chemical properties to the polymer [21][22][23]. Therefore, these optically active polymers were used to prepare chiral electrodes for asymmetric electrosynthesis, polarization-sensitive electro-optical devices, polarized photo-and electroluminescent devices and enantioselective sensors [24]. Herein, we present the synthesis and structural characterizations of the isosorbide-containing PPVs; the thermal, thin film surface, optical and electrochemical properties were investigated. Keywords: polymer synthesis, optically active polymers, semi-conducting polymers, isosorbide, photoluminescence eXPRESS Polymer Letters Experimental 2.1. Materials and measurementsThe poly (2-hexyloxy-5-methoxy-p-phenylenevinylene) (MH-PPV) was synthesized by using Gilch condensation. Detailed synthesis procedure can be found elsewhere [20].

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Section: Introductionmentioning

confidence: 99%

New poly(p-phenylenevinylene) derivatives containing isosorbide unit in the side-chain

Zrida¹,

Hriz²,

Jaballah³

et al. 2014

Express Polym. Lett.

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“…[ 22,23 ] We suggest that it is likely that the generation of methyl radicals close to the polymer surface will induce additional polymerization reactions upon collision with further C 2 H 2 molecules, via an overall equation, C 2 H 2 + CH 3 * → [HC* CH(Me)] . This mechanism Organic thin-fi lm transistors (OTFTs) have attracted considerable attention owing to their potential applications in low cost, large area and fl exible electronics, such as sensors, [ 1,2 ] memories, [ 3,4 ] display backplanes, [ 5,6 ] and radio frequency identifi cation tags. [ 7,8 ] During the last decades, signifi cant efforts have been focused on developing high carrier mobility, chemically and physically stable organic semiconductor materials with reported device performance beyond that of amorphous silicon devices.…”

Section: Doi: 101002/aelm201500374mentioning

confidence: 99%

Room Temperature Grown High‐Quality Polymer‐Like Carbon Gate Dielectric for Organic Thin‐Film Transistors

Feng

Anguita

Tang

et al. 2016

Adv Elect Materials

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from the plasma decomposition of hydrocarbons are known to produce temperature stable materials even when grown at room temperature [ 18 ] which compares to equivalent siliconceramic materials deposited from silane precursors, which require signifi cantly higher deposition temperatures. It is believed that when using hydrocarbons, the plasma is able to provide the carbon radicals with suffi cient electronic excitation energy, to allow the growth of high quality material despite the use of signifi cantly lower growth temperatures, [ 19 ] such as room temperature in this study. The materials formed are stable, and offer functionalities that have wide applicability. In this work, we use this ability to prove the deposition of PLC dielectric fi lms with suffi ciently low defect densities that enable their use for high-quality and electronic-grade gate dielectric layers, even when deposited at room temperature. This low-cost and toxicfree PLC material shows outstanding surface and electrical characteristics, highly suitable for electronic devices. We report for the fi rst time PLC material used as the gate dielectric layer in OTFTs with solution-processed organic semiconductor. The fabricated bottom-gate bottom-contact OTFTs with PLC dielectric present promising overall performance. The capability of PLC for room temperature deposition by well-established and industry-standard PECVD techniques renders it a highly promising gate dielectric material for wide implementation in plastic electronics.The schematic diagram of the PECVD process for PLC dielectric is shown in Figure 1 ; a water-cooling system was used to maintain the substrate at room temperature. We have considered both physical and chemical effects from the plasma on the dielectric, in order to determine the conditions for minimal plasma damage. From a physical perspective, we minimize ion-induced damage by placing the substrates on the earthed electrode of a capacitively coupled RF plasma. We also operate in a relatively high-pressure regime of 900 mTorr, where the mean free path (<<1 mm) is signifi cantly shorter than the electrode separation (8 cm).

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“…More and more attention is now being paid to device structure and processes for OTFT circuit integration [4], [5]. For that purpose, patterning of the channel layer is necessary to eliminate parasitic leakage and reduce crosstalk among neighboring devices.…”

Section: Introductionmentioning

confidence: 99%

Top-Gate Dry-Etching Patterned Polymer Thin-Film Transistors With a Protective Layer on Top of the Channel

Tang

Zhao

Feng

et al. 2015

IEEE Electron Device Lett.

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Abstract-Photolithographic and dry-etching processes are developed to pattern the organic semiconductor (OSC) layer for top-gate organic thin-film transistors (OTFTs). A fluorine polymer layer is used to protect the OSC surface from the patterning processes so that the common photoresist can be used. The ON/OFF current ratios of the patterned OTFTs are improved by about one order of magnitude compared to that of unpatterned devices. However, it is shown that removing the polymer protective layer can cause degraded subthreshold behavior due to increased interface trap density at the semiconductor/dielectric interface. A process without removing the polymer protective layer is thus developed to address this issue, and is shown to be able to provide a reliable route to achieve patterned top-gate OTFTs with high ON/OFF current ratio, small subthreshold swing and negligible hysteresis.

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Reliable and Uniform Thin‐Film Transistor Arrays Based on Inkjet‐Printed Polymer Semiconductors for Full Color Reflective Displays

Cited by 64 publications

References 33 publications

New poly(p-phenylenevinylene) derivatives containing isosorbide unit in the side-chain

New poly(p-phenylenevinylene) derivatives containing isosorbide unit in the side-chain

Room Temperature Grown High‐Quality Polymer‐Like Carbon Gate Dielectric for Organic Thin‐Film Transistors

Top-Gate Dry-Etching Patterned Polymer Thin-Film Transistors With a Protective Layer on Top of the Channel

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