Remarkable Enhancement of Hole Transport in Top‐Gated N‐Type Polymer Field‐Effect Transistors by a High‐k Dielectric for Ambipolar Electronic Circuits

Baeg, Kang‐Jun; Khim, Dongyoon; Jung, Soon‐Won; Kang, Minji; You, In–Kyu; Kim, Dong‐Yu; Facchetti, Antonio; Noh, Yong‐Young

doi:10.1002/adma.201201464

Cited by 187 publications

(183 citation statements)

References 44 publications

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“…It should be noted that P(NDI2OD-T2) is a typical high-mobility n-type semiconductor with a low degree of energetic disorder (32) and both theoretical and experimental studies have shown intrinsically unbalanced electron and hole transport properties in low (i.e., diodes) and high (i.e., OFETs) charge density regimes (33). However, when fluorinated, high-k gate polymers are used as a dielectric insulator, both electrons and holes can be accumulated in the channel, leading to balanced ambipolarity (34,35). The dielectric used here is a 600-nm-thick poly(trifluoroethylene) (PTrFE) film.…”

Section: Resultsmentioning

confidence: 99%

Experimental evidence that short-range intermolecular aggregation is sufficient for efficient charge transport in conjugated polymers

Wang

Fabiano

Himmelberger

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

183

206

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Efficiency, current throughput, and speed of electronic devices are to a great extent dictated by charge carrier mobility. The classic approach to impart high carrier mobility to polymeric semiconductors has often relied on the assumption that extensive order and crystallinity are needed. Recently, however, this assumption has been challenged, because high mobility has been reported for semiconducting polymers that exhibit a surprisingly low degree of order. Here, we show that semiconducting polymers can be confined into weakly ordered fibers within an inert polymer matrix without affecting their charge transport properties. In these conditions, the semiconducting polymer chains are inhibited from attaining longrange order in the π-stacking or alkyl-stacking directions, as demonstrated from the absence of significant X-ray diffraction intensity corresponding to these crystallographic directions, yet still remain extended along the backbone direction and aggregate on a local length scale. As a result, the polymer films maintain high mobility even at very low concentrations. Our findings provide a simple picture that clarifies the role of local order and connectivity of domains.organic electronics | conjugated polymers | aggregation | charge transport C onjugated polymers have received significant scientific attention as the active material in devices for printed and flexible organic electronics (1, 2). Owing to their versatile chemical synthesis, inexpensive processability from solution, and unique mechanical flexibility, these materials are in fact promising for a vast array of devices in future low-cost and distributed technologies, such as integrated systems for electronic labels targeting safety, security, and surveillance applications (3). The rational design of new organic semiconductors has been guided by a thorough investigation of their limitations in charge transport, leading to the development of high-performance materials for next-generation electronic applications such as low-cost displays, solar cells, sensors, and logic circuits (4, 5). For more than a decade research has primarily focused on increasing the long-range order and the crystallinity of conjugated polymers as a strategy to improve the solid-state charge transport properties. As a result, the charge carrier mobility has increased by several orders of magnitude through the design and synthesis of highly ordered polymers. However, recent studies have suggested that the key to designing high-mobility polymers is not to increase their crystallinity but rather to improve their tolerance for disorder by allowing more efficient intra-and intermolecular charge transport pathways (6). This observation explains why mobility values obtained from recently designed seemingly disordered organic semiconductors often exceed those of polymers having a high degree of crystallinity (∼1 cm 2 ·V -1 ·s -1 ) (7-10). Indeed, polymers may exhibit little longrange order, as measured by X-ray diffraction (XRD), and yet display a remarkable degree of short-range or...

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Section: Resultsmentioning

confidence: 99%

Experimental evidence that short-range intermolecular aggregation is sufficient for efficient charge transport in conjugated polymers

Wang

Fabiano

Himmelberger

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

183

206

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“…36 Similar phenomena have also been observed in organic semiconductors. [37][38][39] Although the exact Fermi energy levels and the depletion region lengths of PbS QD and IGZO are unknown, the conceptual energy band diagram of the p-PbS/n-IGZO junction in Figure 3d illustrated the photogenerated charge transfer processes well. To further clarify this working mechanism, time-resolved photoluminescence (TRPL) experiments using the time-correlated singlephoton counting technique (TCSPC) were carried out.…”

Section: Phototransistor Characteristicsmentioning

confidence: 99%

Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain

et al. 2016

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Lead sulfide (PbS) quantum dots (QDs) have great potential in optoelectronic applications because of their desirable characteristics as a light absorber for near-infrared (NIR) photodetection. However, most PbS-based NIR photodetectors are two-terminal devices, which require an integrated pixel circuit to be practical photosensors. Here we report on PbS QD/indium gallium zinc oxide (InGaZnO, IGZO) metal oxide semiconductor hybrid phototransistors with a photodetection capability between 700 and 1400 nm, a range that neither conventional Si nor InGaAs photodetectors can cover. The new hybrid phototransistor exhibits excellent photoresponsivity of over 10 6 A W − 1 and a specific detectivity in the order of 10 13 Jones for NIR (1000 nm) light. Furthermore, we demonstrate an NIR (1300 nm) imager using photogating inverter pixels based on PbS/IGZO phototransistors at an imaging frequency of 1 Hz with a high output voltage photogain of~4.9 V (~99%). To the best of our knowledge, this report demonstrates the first QD/metal oxide hybrid phototransistor-based flat panel NIR imager. Our hybrid approach using QD/metal oxide paves the way for the development of gate-tunable and highly sensitive flat panel NIR sensors/ imagers that can be easily integrated.

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“…However, there are very few choices of suitable polymer dielectrics with high enough k values. Cyanoethylpullulan (CYEPL) [75], ferroelectric polymer poly (vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] [76], and relaxor ferroelectric polymer poly(vinylidene fluoridetrifluoroethylene-chlorofloroethylene) [P(VDF-TrFE-CFE)] [77], [78] have been studied for lowvoltage OTFTs. P(VDF-TrFE-CFE) was reported to have a k value above 60 [78].…”

Section: Review Of Current Statusmentioning

confidence: 99%

Current Status and Opportunities of Organic Thin-Film Transistor Technologies

Guo

Ogier³

et al. 2017

IEEE Trans. Electron Devices

239

162

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-Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput manufacturing, organic thin-film transistor (OTFT) technology is able to bring electrical, mechanical, and industrial benefits to a wide range of new applications by activating nonflat surfaces with flexible displays, sensors, and other electronic functions. Despite both strong application demand and these significant technological advances, there is still a gap to be filled for OTFT technology to be widely commercially adopted. This paper provides a comprehensive review of the current status of OTFT technologies ranging from material, device, process, and integration, to design and system applications, and clarifies the real challenges behind to be addressed.

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Remarkable Enhancement of Hole Transport in Top‐Gated N‐Type Polymer Field‐Effect Transistors by a High‐k Dielectric for Ambipolar Electronic Circuits

Cited by 187 publications

References 44 publications

Experimental evidence that short-range intermolecular aggregation is sufficient for efficient charge transport in conjugated polymers

Experimental evidence that short-range intermolecular aggregation is sufficient for efficient charge transport in conjugated polymers

Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain

Current Status and Opportunities of Organic Thin-Film Transistor Technologies

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