Research of Single-Event Burnout and Hardening of AlGaN/GaN-Based MISFET

Luo, Xiaorong; Wang, Ying; Hao, Yue; Li, Xingji; Liu, Chaoming; Fei, Xin-Xing; Yu, Cheng-Hao; Cao, Fei

doi:10.1109/ted.2018.2887245

Cited by 26 publications

(13 citation statements)

References 24 publications

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“…Moreover, the polarization model including the gate-dependent strain is included. The effectiveness of these models has been validated in [23].…”

Section: Structures and Simulation Setupmentioning

confidence: 99%

“…During the research of single-event damage on normally-off GaN-based power control applications, Mizuta et al [22] observed two types of catastrophic failure modes with different leakage current paths, one was caused by the leakage current path between the drain and Si substrate via the buffer layer, the other was the damage between the drain and source. Luo et al [23] supposed that the HEMT sensitive position of the traditional gate-field plate structure is near the drain side of the gate-field plate, because the high electric field near the gate-field plate can effectively accelerate the carriers to ionize more carriers and trigger SEB. Islam et al [2] investigated the effects of ion irradiation on AlGaN/GaN HEMTs, they found that heavy ions can create a significant number of defects such as vacancies, interstitials and dislocations in the device layer.…”

Section: Introductionmentioning

confidence: 99%

“…In order to improve the SEB performance of conventional structure and simplify the fabrication process of the hardened structure demonstrated in authors' previous work [23], a new hardened structure with an AlGaN interlayer is proposed in this paper. The SEB performances of the conventional structure and the hardened structure under heavy-ion irradiation are investigated, and the hardened mechanism of the new structure is analyzed.…”

Section: Introductionmentioning

confidence: 99%

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An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer

Zhang

Wang

Wu³

et al. 2020

IEEE Access

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A new single event burnout (SEB) hardened AlGaN/GaN structure with a thin barrier interlayer (IL) is presented in this work. The proposed hardened structure is compared with the simulation results of the conventional structure. The comparative analysis demonstrates that the IL lifts the conduction band energy in buffer layer and a new quantum well is formed. The quantum well limits the electrons induced by heavy ion below the second channel into the first channel. Thus, better SEB performance is achieved compared with the conventional structure. Moreover, the breakdown characteristic of the new structure is significantly improved, while the output characteristic is slightly reduced. Under the condition that the two structures are irradiated vertically by heavy ion having the linear energy transfer (LET) value of 0.6 pC/µm, the SEB threshold voltage of the conventional structure is 280 V, while the hardened structure can achieve 375 V. INDEX TERMS GaN, high-electron mobility transistor (HEMT), single event burnout (SEB), barrier interlayer, SEB threshold voltage.

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“…Moreover, the polarization model including the gate-dependent strain is included. The effectiveness of these models has been validated in [23].…”

Section: Structures and Simulation Setupmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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An SEB Hardened AlGaN/GaN HEMT With Barrier Interlayer

Zhang

Wang

Wu³

et al. 2020

IEEE Access

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“…Considering this, radiation tolerance in electronics has become a relevant issue in the field of communication systems, specially for electronics in harsh environments. Many solutions for radiation-tolerant circuits can be found implemented in gallium-nitride (GaN), silicon-germanium (SiGe) or silicon-on-insulator (SOI) processes [18][19][20][21][22][23][24][25]. Regarding GaN devices, their wide bandgap, large breakdown electric field and outstanding thermal stability make them an attractive candidate for space applications [20].…”

Section: Introductionmentioning

confidence: 99%

“…Several studies have concluded that GaN transistors have a high tolerance to accumulative dose effects [21,22]. Nevertheless, other studies have shown some vulnerability in GaN transistors against SEEs [19].…”

Section: Introductionmentioning

confidence: 99%

Single-Event Transients in an IEEE 802.15.4 RF Receiver for Wireless Sensor Networks

Mateos-Angulo

Pino

Mayor-Duarte

et al. 2020

Sensors

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This paper presents a procedure to analyse the effects of radiation in an IEEE 802.15.4 RF receiver for wireless sensor networks (WSNs). Specifically, single-event transients (SETs) represent one of the greatest threats to the adequate performance of electronic communication devices in high-radiation environments. The proposed procedure consists in injecting current pulses in sensitive nodes of the receiver and analysing how they propagate through the different circuits that form the receiver. In order to perform this analysis, a Complementary Metal Oxide Semiconductor (CMOS) low-IF receiver has been designed using a 0.18 μm technology from the foundry UMC. In order to analyse the effect of single-event transients in this receiver, it has been studied how current pulses generated in the low-noise amplifier propagate down the receiver chain. The effect of the different circuits that form the receiver on this kind of pulse has been studied prior to the analysis of the complete receiver. First, the effect of SETs in low-noise amplifiers was analysed. Then, the propagation of pulses through mixers was studied. The effect of filters in the analysed current pulses has also been studied. Regarding the analysis of the designed RF receiver, an amplitude and phase shift was observed under the presence of SETs.

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