2011
DOI: 10.1007/s11458-011-0224-y
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Research progress on mid-IR nonlinear optical crystals with high laser damage threshold in China

Abstract: Nonlinear optical (NLO) crystals have been playing an increasingly important role in laser science and technology. The NLO crystals used in the middle infrared (mid-IR) region, compared with the NLO crystals in the other wavelength regions, are still not good enough for the application of high-energy laser. The main defect is that their laser damage thresholds (LDT) are low. Chinese scientists have made a lot of important contributions to the UV and visible NLO crystals. In the last decade, they also did a lot… Show more

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Cited by 8 publications
(6 citation statements)
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“…Results show that Ba 2 Si 3 P 6 exhibits a much higher LDT (48.5 MW/cm 2 ) than that of AgGaS 2 (29.6 MW/cm 2 ) (Table 1), which is also higher than that of recently discovered MgSiAs 2 (33.2 MW/ cm 2 ) as well as those of other typical IR-NLO materials such as AgGaSe 2 and ZnGeP 2 . 27,38,39,64,65 Recently reported MnSiP 2 NLO material crystallizing in the chalcopyrite structure type also exhibits high LDT, although measured on a single crystal (70 MW/cm 2 ), thus confirming that silicon-phosphides are a good platform for novel NLO materials. 60 The promising SHG coefficient in addition to the high LDT makes Ba 2 Si 3 P 6 a promising candidate for IR-NLO applications.…”
Section: ■ Experimental Sectionmentioning
confidence: 95%
“…Results show that Ba 2 Si 3 P 6 exhibits a much higher LDT (48.5 MW/cm 2 ) than that of AgGaS 2 (29.6 MW/cm 2 ) (Table 1), which is also higher than that of recently discovered MgSiAs 2 (33.2 MW/ cm 2 ) as well as those of other typical IR-NLO materials such as AgGaSe 2 and ZnGeP 2 . 27,38,39,64,65 Recently reported MnSiP 2 NLO material crystallizing in the chalcopyrite structure type also exhibits high LDT, although measured on a single crystal (70 MW/cm 2 ), thus confirming that silicon-phosphides are a good platform for novel NLO materials. 60 The promising SHG coefficient in addition to the high LDT makes Ba 2 Si 3 P 6 a promising candidate for IR-NLO applications.…”
Section: ■ Experimental Sectionmentioning
confidence: 95%
“…Indeed, most NLO materials designed thus far have excellent nonlinear coefficients, but their thermal properties and LIDT, which are key indices to characterize the performance of mid-infrared NLO materials, are inadequate . Previous studies have shown that electron absorption causes thermal and electronic effects, thereby leading to laser damage . A wide band gap (wider than 3.0 eV) usually corresponds to high LIDT and low TPA in an IR NLO crystal.…”
Section: Introductionmentioning
confidence: 99%
“…Several IR NLO crystals (e.g., chalcopyrite-type AgGaS 2 , AgGaSe 2 , and ZnGeP 2 ) have been commercially available since the 1970s . Nevertheless, their properties severely restrict their wider applications . AgGaS 2 and AgGaSe 2 have not only low LIDT, resulting from TPA due to a narrow band gap, but also poor thermal conductivity and anisotropic thermal expansion.…”
Section: Introductionmentioning
confidence: 99%
“…However, in the mid-IR to far-IR regions, only AgGaSe 2 , AgGaS 2 , and ZnGeP 2 could be the mature NLO materials due to their large NLO responses and wide IR transmission ranges. Unfortunately, the inevitable defects , such as the small band gaps which could result in the strong multiphoton absorption at ∼1 μm in ZnGeP 2 and the low lattice thermal conductivity which could lead to the limited life cycle and low conversion efficiency in AgGaSe 2 and AgGaS 2 have seriously hindered their further applications in modern laser technology . Therefore, it is an urgent need to explore promising IR NLO candidates with outstanding comprehensive performances.…”
Section: Introductionmentioning
confidence: 99%