2020
DOI: 10.1021/acsaem.0c00245
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Residual PbI2 Beneficial in the Bulk or at the Interface? An Investigation Study in Sputtered NiOx Hole-Transport-Layer-Based Perovskite Solar Cells

Abstract: Investigation of the perovskite (MAPbI3; MA+ = CH3NH3 +) crystallization, location of residual lead iodide (PbI2), and its influence on the optoelectronic and photovoltaic properties is important to resolve the low-efficiency issue in radio frequency (RF) sputtered nickel oxide (sp-NiO x ) based perovskite solar cells (PSCs). Despite obtaining the perovskite layer from a solution of the stoichiometric ratio of precursor materials using a one-step method (OSM) for spin-coating, residual PbI2 grains are observed… Show more

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Cited by 32 publications
(37 citation statements)
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“…However, based on the needle-like structure of these segregations, a PbI 2 -rich character is assumed here as has been previously reported. [80][81][82][83] Despite some uncertainties about the exact nature of these segregations, a rather detrimental influence is expected. Moreover, the size and shape of perovskite crystals on PTAA appear more homogeneous and well defined.…”
Section: Interplay Between Substrate Materials and Thin-film Formation During Co-evaporationmentioning
confidence: 99%
“…However, based on the needle-like structure of these segregations, a PbI 2 -rich character is assumed here as has been previously reported. [80][81][82][83] Despite some uncertainties about the exact nature of these segregations, a rather detrimental influence is expected. Moreover, the size and shape of perovskite crystals on PTAA appear more homogeneous and well defined.…”
Section: Interplay Between Substrate Materials and Thin-film Formation During Co-evaporationmentioning
confidence: 99%
“…A blueshift in the PL peak (Figure S13b, Supporting Information) was correspondingly observed for Ag 3 BiI 6 film processed with antisolvent. The exact reason for the enhanced PL peak intensity and blueshift is not known at the moment, but it might be due to low trap/defect sites and recombination centers [36,37] in the bulk of Ag 3 BiI 6 and/or could also be within the experimental error mostly because of the existence of impure phase or multiphase features. In addition to this, the PL showed a small additional peak at around %735 nm which can be ascribed to the Ag 3 BiI 6 impure phase (presence of residual AgI) and/or multiphase features.…”
Section: Resultsmentioning
confidence: 99%
“…In addition, Al, In and Ga doped ZnO are also promising for electron transporting in inverted PSCs. 5,6,42,60,121,147,148,153,170,[220][221][222][223] The reported inorganic materials used as ETM are summarized in Table 1.…”
Section: Principles Of Top Etlmentioning
confidence: 99%
“…Al doped ZnO (ZAO) with better properties than pristine ZnO has been widely used as top ETL in inverted PSCs. 5,6,42,60,121,147,148,153,170 Shown in Figure 4, Al doping enhanced the properties of pristine ZnO, such as transmittance, conductivity, and thus improve the device performance. Similarly, In References 151,220 and Ga 221,222 have also been applied as dopants in ZnO and used as efficient top ETL in inverted PSCs.…”
Section: Binary Metal Oxides and Their Modificationmentioning
confidence: 99%
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