Residual stress of AlN films RF sputter deposited on Si(111) substrate

Zhong, Hui; Xiao, Zhanfei; Jiao, Xiangquan; Yang, Jie; Wang, Hualei; Zhang, Rui; Yu, Suzhu

doi:10.1007/s10854-012-0760-3

Cited by 12 publications

(18 citation statements)

References 18 publications

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“…Mirpuri et al [ 19 ] varied the temperature between 150 and 350 °C and reported the best FWHM of rocking curve of 10.4°. Finally, Zhong et al [ 12 ] ran the experiment between room temperature and 300 °C. They reported the lowest FWHM of rocking curve of 2° at both extremes.…”

Section: Resultsmentioning

confidence: 99%

Pulsed DC Sputtering of Highly c‐Axis AlN Film on Top of Si (111) Substrate

Iqbal

Walker

Hold

et al. 2021

Physica Status Solidi (b)

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Herein, pulsed DC sputtering of the AlN film on top of the Si (111) substrate is reported on. First, major articles on the reactive sputtering of AlN film on top of Si (111) substrate that were published in the past 30 years are tabulated. Then, a sputtering recipe to produce a consistent and high‐crystal‐quality (as measured by the full width at half maximum [FWHM] of rocking curve) AlN film across varying substrate temperatures (250–450 °C) and sputtering powers (1200–2400 W) is proposed. In addition, the influence of both parameters to in‐plane stress is demonstrated, in agreement with similar trends that have been reported in the literature for AlN films on other substrates. The best sample is produced at a substrate temperature of 350 °C and sputtering power of 1800 W, resulting in FWHM of rocking curve of 1.84°, surface roughness of 1 nm, and in‐plane stress of +300 MPa. The recipe herein is beneficial for integration of AlN thin film in complementary metal–oxide–semiconductor and micro‐electromechanical system processes.

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Section: Resultsmentioning

confidence: 99%

Pulsed DC Sputtering of Highly c‐Axis AlN Film on Top of Si (111) Substrate

Iqbal

Walker

Hold

et al. 2021

Physica Status Solidi (b)

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“…), growth parameters (flow rate, deposition temperature, plasma power, etc.) [ 27 ], the material quality of the underlaying template [ 28 ], or the layer thickness [ 29 ]. In our previous studies, we found that AlN layers having a similar thickness deposited directly on Si wafer in our RF sputtering system resulted in a significant tensile stress (~575 MPa) in the layer.…”

Section: Resultsmentioning

confidence: 99%

Spiral-Shaped Piezoelectric MEMS Cantilever Array for Fully Implantable Hearing Systems

Udvardi

Straszner

et al. 2017

Micromachines

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Fully implantable, self-powered hearing aids with no external unit could significantly increase the life quality of patients suffering severe hearing loss. This highly demanding concept, however, requires a strongly miniaturized device which is fully implantable in the middle/inner ear and includes the following components: frequency selective microphone or accelerometer, energy harvesting device, speech processor, and cochlear multielectrode. Here we demonstrate a low volume, piezoelectric micro-electromechanical system (MEMS) cantilever array which is sensitive, even in the lower part of the voice frequency range (300–700 Hz). The test array consisting of 16 cantilevers has been fabricated by standard bulk micromachining using a Si-on-Insulator (SOI) wafer and aluminum nitride (AlN) as a complementary metal-oxide-semiconductor (CMOS) and biocompatible piezoelectric material. The low frequency and low device footprint are ensured by Archimedean spiral geometry and Si seismic mass. Experimentally detected resonance frequencies were validated by an analytical model. The generated open circuit voltage (3–10 mV) is sufficient for the direct analog conversion of the signals for cochlear multielectrode implants.

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“…The value increase dramatically to 7.41° at 80% ratio. Zhong et al [ 71 ] also reported the strong influence of the N 2 concentration on the AlN films. They reported a decrease in the FWHM of the (002) diffraction peak amplitude when the N 2 concentration increased from 25 to 75%.…”

Section: Compilation Of Recipes and The Roles Of The Sputtering Pamentioning

confidence: 99%

Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

Iqbal

Mohd-Yasin

2018

Sensors

160

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We summarize the recipes and describe the role of sputtering parameters in producing highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is collated from the analysis of around 80 journal articles that sputtered this film on variety of substrate materials, processes and equipment. This review will be a good starting point to catch up with the state-of-the-arts research on the reactive sputtering of AlN (002) thin film, as well as its evolving list of piezoelectric applications such as energy harvesters.

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Residual stress of AlN films RF sputter deposited on Si(111) substrate

Cited by 12 publications

References 18 publications

Pulsed DC Sputtering of Highly c‐Axis AlN Film on Top of Si (111) Substrate

Pulsed DC Sputtering of Highly c‐Axis AlN Film on Top of Si (111) Substrate

Spiral-Shaped Piezoelectric MEMS Cantilever Array for Fully Implantable Hearing Systems

Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

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