2011
DOI: 10.1016/j.ijsolstr.2011.01.010
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Residual stresses in silicon-on-sapphire thin film systems

Abstract: a b s t r a c tThis paper uses the finite element method to analyse the generation and evolution of residual stress in silicon-on-sapphire thin film systems during cooling. The effects of material properties, thin film structures and processing conditions, on the stress distribution were explored in detail. It was found that under certain conditions, significant stress concentration and discontinuity can take place to initiate crack and/or delamination in the systems. However, these can be minimised by control… Show more

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Cited by 14 publications
(6 citation statements)
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“…In addition, multipurpose X-ray thin film diffractometer (Rigaku ATX-E; D/MAX2500) was used to measure the stress value. 17,18) 3. Results and Discussion Figure 1 shows SEM images of three Ag films (30, 110 and 400 nm) with different thickness.…”
Section: Methodsmentioning
confidence: 99%
“…In addition, multipurpose X-ray thin film diffractometer (Rigaku ATX-E; D/MAX2500) was used to measure the stress value. 17,18) 3. Results and Discussion Figure 1 shows SEM images of three Ag films (30, 110 and 400 nm) with different thickness.…”
Section: Methodsmentioning
confidence: 99%
“…However, this technique similarly as other PVD processes usually develops high values of residual stresses . The residual stresses in a thin film system can lead to: buckling, cracking, a void formation, and a film debonding . For a room temperature deposition, stresses easily can reach an unacceptable level .…”
Section: Fe Model On Micro‐scalementioning
confidence: 99%
“…However, this technique similarly as the other physical vapour deposition (PVD) processes usually develops high values of residual stresses [12]. The residual stresses in the layer deposited by PVD methods result from the mismatch of the lattice parameters and of the thermal expansion properties between a thin film and substrate [13]. For the PLD process, kinetic energies of ions and neutral species in an ablation plume can range from a few tenths to several hundred electron volts and are sufficient to modify a stress state of superficial layers through defect formation [14].…”
Section: Introductionmentioning
confidence: 99%
“…The compressive stress state is typical for layers deposited from an unabated energetic plume. The residual stresses in a thin film system can lead to buckling, cracking, void formation, and film debonding [13]. For the room temperature deposition, the stresses easily can reach an unacceptable level [11].…”
Section: Introductionmentioning
confidence: 99%