Resist and Sidewall Film Removal after Al Reactive Ion Etching (RIE) Employing F+H<sub>2</sub>O Downstream Ashing

Jimbo, Sadayuki; Shimomura, Koji; Ohiwa, Tokuhisa; Sekine, Makoto; Mori, Haruki; Horioka, Keiji; Okano, Haruo

doi:10.1143/jjap.32.3045

Cited by 12 publications

(9 citation statements)

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“…The second type of signal, which has also been observed previously, is present in samples that have been treated with the F plasma. Here, the oxide peak is shifted to even higher binding energy (approximately 77.7 eV) . This result is consistent with an element more electronegative than oxygen binding to aluminum and/or to the oxygen binding to aluminum.…”

Section: Resultssupporting

confidence: 82%

“…The first is present in the two samples that had not ‘seen’ the F plasma: the Al‐0s and NP‐0s samples. These two spectra show a peak at approximately 75.7 eV, which is known in the literature to correspond to the oxidized aluminum in aluminum oxide . The similarity of the spectra of these two samples implies that deposition of NP does not substantially perturb the aluminum substrate.…”

Section: Resultsmentioning

confidence: 61%

“…In this case, a SiCl 4 + Cl 2 plasma was run in the chamber to reactively etch the aluminum fluoride and form volatile SiF 4 and AlCl 3 . Aluminum fluoride has high solubility in water, and this property has been exploited to form sharper aluminum features in photolithography; the residual resist on the side walls of aluminum features has been removed by treating the surface with a fluorinated plasma followed by a water rinse . The creation of aluminum fluoride and/or aluminum oxyfluoride can be achieved by treatment with hydrofluoric acid, by passing fluorinated alkanes over alumina/aluminum at high temperature, or by exposure of aluminum/alumina to a fluorine‐containing plasma, e.g.…”

Section: Introductionmentioning

confidence: 99%

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Fluorine plasma treatment of bare and nitrilotris(methylene)triphosphonic acid (NP) protected aluminum: an XPS and ToF-SIMS study

Madaan

Diwan

Linford

2014

Surf. Interface Anal.

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Nitrilotris(methylene)triphosphonic acid (NP) is a technologically important molecule that has been used for years as a corrosion inhibitor and/or adhesion promoter on aluminum and other metal surfaces. However, to the best of our knowledge, the detailed surface characterization of NP adsorbed on aluminum, or on any other surface, has not been reported. Herein, we report an X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry (ToF-SIMS) analysis of a series of untreated and NP-coated aluminum substrates that were exposed to the downstream products of a fluoroalkane + oxygen plasma for different amounts of time (from 0 to 20 s). As indicated by P 2p, N 1s, Al 2p, O 1s, and F 1s narrow scans, even a 4-s plasma treatment significantly damages the NP protective layer and converts the native aluminum oxide into aluminum oxyfluoride. Heat treatment of the fluorine plasma-treated samples in the air substantially converts the aluminum oxyfluoride back to aluminum oxide, while similar heating under vacuum results in little change to the materials. A slow loss of fluorine from the samples occurs over the course of weeks when they are stored in the air. A ToF-SIMS analysis reveals sets of signals that are consistent with no surface treatment, NP treatment, or fluorine plasma treatment. A principal component analysis of the negative ion ToF-SIMS spectra from the samples shows the expected differentiation of the samples.

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Section: Resultssupporting

confidence: 82%

Section: Resultsmentioning

confidence: 61%

Section: Introductionmentioning

confidence: 99%

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Fluorine plasma treatment of bare and nitrilotris(methylene)triphosphonic acid (NP) protected aluminum: an XPS and ToF-SIMS study

Madaan

Diwan

Linford

2014

Surf. Interface Anal.

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“…It has shown up in plasma processing, [16][17][18][19][20][21][22][23][24] as cross contamination from storage in contaminated containers or with contaminated samples, 20,24 and modification of aluminum deposited on fluoropolymer substrates and other polymers having fluorine based plasma treatments has also been observed. [25][26][27] Fluorocarbon lubricants have also been noted to modify the oxide structures on aluminum alloys 28,29 and the degradation of Al 2 O 3 catalytic supports has been associated with fluoride conversion during reactions with fluorocarbons.…”

Section: A Adhesion Failure Caused By Wall Contaminationmentioning

confidence: 99%

Effects of wall contamination on consecutive plasma processes

Yasuda

Reddy

et al. 2001

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Effect of substrate on the step coverage of plasma-enhanced chemical-vapor deposited tetraethylorthosilicate films J.Low temperature diamond growth using CO 2 /CH 4 plasmas: Molecular beam mass spectrometry and computer simulation investigations Plasma processes often go beyond the primary objectives focused on the substrate, or targeted materials. For instance, sputtered materials deposit on surfaces other than the substrate, and plasma deposition extends to the walls of the reactor. In the process of plasma polymerization, or plasma chemical vapor deposition ͑PCVD͒, every surface ͑not just the substrate surface͒ participates in the overall plasma deposition process. Consequently the chemical and physical natures of all surfaces within a reactor are very important factors that determine the fate of the PCVD process. The materials deposited on the wall surface ͑wall contaminants͒ are created in the previous run in a batch operation of PCVD. In a sequential plasma process, where plasma polymerization of trimethylsilane ͑TMS͒ was followed by plasma polymerization of hexafluoroethane ͑HFE͒, F-containing oligomers ͑low molecular weight compounds͒, created during the plasma polymerization of HFE in the previous run, remain on surfaces in the reactor. The wall contaminants were found to migrate to the new substrate ͑aluminum alloy͒ surface in the subsequent run upon the evacuation of the reactor. If an O 2 plasma treatment is applied, F-containing organic compounds chemisorbed on the new substrate surface are converted to F-containing inorganic compounds, which decreases the plasma-ablatable F on the surface. If no O 2 plasma treatment is applied, the F-containing organic compounds are exposed to the environment of the TMS plasma. From the viewpoint of the sequence of plasma processes, a new HFE/TMS sequence is created without the O 2 plasma treatment. The HFE/TMS system ͑reversed order to the normal cycle͒ causes adhesion failure at the interface between the plasma polymers and the aluminum alloys, whereas the TMS/HFE system yields good adhesion of plasma deposited layers to the substrate and provides superior adhesion of a primer applied on the plasma polymer coating. This difference was created by the difference in handling of the wall contaminants.

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“…7,8 We reported the successful detection of AlF molecular desorption by using TDS and that it had the largest intensity among the detected species. 12 Carbon compounds containing Al, such as AlC, were also detected; they had a weaker intensity. 12 Carbon compounds containing Al, such as AlC, were also detected; they had a weaker intensity.…”

Section: Introductionmentioning

confidence: 99%

Observation of sidewall contamination in submicron contact holes by thermal desorption spectroscopy

Teraoka¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inAspect ratio effects in submicron contact hole plasma etching investigated by quantitative x-ray photoelectron spectroscopy J. Vac. Sci. Technol. A 15, 579 (1997); 10.1116/1.580687New method for thermal desorption spectroscopy using field electron emission microscopy Rev.The etching contamination remaining in Al-base SiO 2 contact holes after hole fabrication followed by a series of cleaning treatments was analyzed by using thermal desorption spectroscopy. The hole aspect ratio dependence was measured for fluorinated aluminum molecules, the major desorption species. The amount of contaminant material in the holes was found to increase with the sidewall area of the holes, suggesting that the contaminant material desorbs from the bottom surface and accumulates on the SiO 2 sidewall during contact hole etching.

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Resist and Sidewall Film Removal after Al Reactive Ion Etching (RIE) Employing F+H₂O Downstream Ashing

Cited by 12 publications

References 1 publication

Fluorine plasma treatment of bare and nitrilotris(methylene)triphosphonic acid (NP) protected aluminum: an XPS and ToF-SIMS study

Fluorine plasma treatment of bare and nitrilotris(methylene)triphosphonic acid (NP) protected aluminum: an XPS and ToF-SIMS study

Effects of wall contamination on consecutive plasma processes

Observation of sidewall contamination in submicron contact holes by thermal desorption spectroscopy

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Resist and Sidewall Film Removal after Al Reactive Ion Etching (RIE) Employing F+H2O Downstream Ashing

Cited by 12 publications

References 1 publication

Fluorine plasma treatment of bare and nitrilotris(methylene)triphosphonic acid (NP) protected aluminum: an XPS and ToF-SIMS study

Fluorine plasma treatment of bare and nitrilotris(methylene)triphosphonic acid (NP) protected aluminum: an XPS and ToF-SIMS study

Effects of wall contamination on consecutive plasma processes

Observation of sidewall contamination in submicron contact holes by thermal desorption spectroscopy

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Resist and Sidewall Film Removal after Al Reactive Ion Etching (RIE) Employing F+H₂O Downstream Ashing