2007
DOI: 10.2494/photopolymer.2.315
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Resist Removal by Using Wet Ozone

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Cited by 2 publications
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“…O 3 has a strong oxidation power and is applied to waste water treatment and semiconductor manufacturing [5][6][7][8][9][10][11]. O 3 water degrades compounds with C=C bond to carboxylic acid [12,13]. Additionally, O 3 generates reactive oxygen species through self-decomposition in water.…”
Section: Introductionmentioning
confidence: 99%
“…O 3 has a strong oxidation power and is applied to waste water treatment and semiconductor manufacturing [5][6][7][8][9][10][11]. O 3 water degrades compounds with C=C bond to carboxylic acid [12,13]. Additionally, O 3 generates reactive oxygen species through self-decomposition in water.…”
Section: Introductionmentioning
confidence: 99%
“…Also, a small amount of water vapor condenses on the resist, due to the difference in temperature (ΔT = T 1 − T 2 ) between wet ozone (T 1 ) and Si wafer (T 2 ). The amount of water condensed on the resist was controlled by adjusting ΔT [19]. Figure 2 depicts the chemical reaction of the carbon-carbon double bond (C-C double bond) with ozone and the hydrolysis of ozonide.…”
Section: Introductionmentioning
confidence: 99%