Resistance Anomalies at Superconducting Transition in Multilayer N/S/F/S/N Heterostructures

Gál, N.; Štrbı́k, V.; Gaži, Š.; Chromík, Š.; Talacko, M.

doi:10.1007/s10948-018-4720-x

Cited by 3 publications

(1 citation statement)

References 11 publications

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“…1d. The resistance displays an anomalous rise just before dropping to zero at the superconducting transition around 3.7 K. This behaviour can be attributed to a decrease in the DOS near EF when Cooper pairs are formed in the α-Sn due to the superconducting proximity effect at the α-Sn/β-Sn interface 33 . Interestingly, we observe a giant superconducting diode effect (SDE) in all three β-Sn nanowires when a magnetic field is applied parallel and antiparallel to the current at 2 K. Figure 2a shows the resistance -current characteristics in the β-Sn nanowire with W = 500 nm (which we name NW90).…”

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confidence: 97%

Giant superconducting diode effect in ion-beam patterned Sn-based superconductor nanowire / topological Dirac semimetal planar heterostructures

Anh,

Ishihara,

Hotta

et al. 2023

Preprint

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Superconductor/topological material heterostructures are intensively studied as a platform for topological superconductivity and Majorana physics1-15. However, the high cost of nanofabrication and the difficulty of preparing high quality interfaces between the two dissimilar materials are common obstacles that hinder the observation of intrinsic physics and the realisation of scalable topological devices and circuits. Here, we demonstrate an innovative method to directly draw nanoscale superconducting beta-tin (β-Sn) patterns of any shape in the plane of a topological Dirac semimetal (TDS) alpha-tin (α-Sn) thin film16 by irradiating a focused ion beam (FIB). We utilise the property that α-Sn undergoes a phase transition to superconducting β-Sn upon heating by FIB. In β-Sn nanowires embedded in a TDS α-Sn thin film, we observe giant non-reciprocal superconducting transport, where the critical current changes by 69% upon reversing the current direction. The superconducting diode rectification ratio η reaches a maximum when the magnetic field is applied parallel to the current, distinguishing itself from all the previous reports. Moreover, it oscillates between alternate signs with increasing magnetic field strength. The angular dependence of η on the magnetic field and current directions is similar to that of the chiral anomaly effect in TDS α-Sn, suggesting that the SDE may occur at the α-Sn/β-Sn interfaces where the TDS α-Sn becomes superconducting by a proximity effect. As superconducting TDSs are expected candidates for topological superconductivity and harboring Majorana bound states,17,18,19 the ion-beam patterned Sn-based superconductor/TDS planar structures thus show promise as a universal platform for investigating novel quantum physics and devices based on topological superconducting circuits of any shape.

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confidence: 97%

Giant superconducting diode effect in ion-beam patterned Sn-based superconductor nanowire / topological Dirac semimetal planar heterostructures

Anh,

Ishihara,

Hotta

et al. 2023

Preprint

View full text Add to dashboard Cite

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Large superconducting diode effect in ion-beam patterned Sn-based superconductor nanowire/topological Dirac semimetal planar heterostructures

Anh,

Ishihara,

Hotta

et al. 2024

Nat Commun

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High-quality superconductor/topological material heterostructures are highly desired for realisation of topological superconductivity and Majorana physics. Here, we demonstrate a method to directly draw nanoscale superconducting β-Sn patterns in the plane of a topological Dirac semimetal (TDS) α-Sn thin film by irradiating a focused ion beam and taking advantage of the heat-driven phase transition of α-Sn into superconducting β-Sn. The β-Sn nanowires embedded in a TDS α-Sn thin film exhibit a large superconducting diode effect (SDE), whose rectification ratio η reaches a maximum of 35% when the magnetic field is applied parallel to the current. The results suggest that the SDE may occur at the α-Sn/β-Sn interfaces where the TDS α-Sn becomes superconducting by a proximity effect. Our work thus provides a universal platform for investigating quantum physics and devices based on topological superconducting circuits of any shape.

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Long-range superconducting proximity effect in nickel nanowires

Jiang

Zhao

Wang

et al. 2022

Phys. Rev. Research

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Resistance Anomalies at Superconducting Transition in Multilayer N/S/F/S/N Heterostructures

Cited by 3 publications

References 11 publications

Giant superconducting diode effect in ion-beam patterned Sn-based superconductor nanowire / topological Dirac semimetal planar heterostructures

Giant superconducting diode effect in ion-beam patterned Sn-based superconductor nanowire / topological Dirac semimetal planar heterostructures

Large superconducting diode effect in ion-beam patterned Sn-based superconductor nanowire/topological Dirac semimetal planar heterostructures

Long-range superconducting proximity effect in nickel nanowires

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