Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer

Müller, Christophe; Deleruyelle, Damien; Müller, Robert N.; Thomas, Matthew A.; Demolliens, A.; Turquat, Ch.; Spiga, S.

doi:10.1016/j.sse.2010.10.006

Cited by 9 publications

(3 citation statements)

References 29 publications

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“…On the basis of CuTCNQ, the electric switching mechanism of the AgTCNQF 4 microrods is described. As shown in Scheme , an air gap or water meniscus was formed between the Au‐coated AFM tip and AgTCNQF 4 surface. Tip connection or atmosphere gap isolation determines the current signal on or off.…”

Section: Resultsmentioning

confidence: 99%

Resonance Raman spectroscopy studies on photoinduced AgTCNQF₄ charge transfer and its electrical switching behavior

Wang

2015

J Raman Spectroscopy

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The photoinduced charge transfer (CT) phenomenon of a metal–organic complex, Ag ion‐coordinated tetrafluorotetracyano‐p‐quinodimethane (AgTCNQF4), produced by a solution reaction of immersing an Ag deposited film into TCNQF4 acetonitrile solution, was studied by the resonance Raman spectroscopy. The produced AgTCNQF4 formed abundant crystalline microrods over the slide. The analysis of Raman results shows that the photoinduced CT in the AgTCNQF4 microrods possesses a light energy threshold that the excitation wavelengths should be shorter than 514 nm. And the complete degree of CT reaction from TCNQF4− to TCNQF42− accelerates with the irradiation energy increasing. A divalent metal–organic complex (Ag2TCNQF4) is produced as a result of the photoinduced electron transition of AgTCNQF4. The conductive‐atomic force microscope characterization of the AgTCNQF4 microrods proves that this metal–organic complex possesses the reversible electrical bistable switching property. This study is of significance in deeper understanding the electrical and optical properties of such kinds of metal–organic CT complexes and promoting the promising application potential based on the light and electric dual control devices. Copyright © 2015 John Wiley & Sons, Ltd.

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Section: Resultsmentioning

confidence: 99%

Resonance Raman spectroscopy studies on photoinduced AgTCNQF₄ charge transfer and its electrical switching behavior

Wang

2015

J Raman Spectroscopy

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“…A number of studies have been devoted to MIM structures incorporating a (macro-)molecular layer in combination with a dedicated inorganic switching layer consisting of metal oxide [56,57] or metal halide [58]. Similar to metal oxide memory cells, these hybrid devices require an electroforming step before resistive memory effects become apparent.…”

Section: Hybrid Diodes Involving a Dedicated Inorganic Switching Layermentioning

confidence: 99%

Macromolecular Memory

Bory

Meskers

2014

Emerging Nanoelectronic Devices

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“…In recent years, copper based compounds, such as copper oxide (Cu x O) [3,4], copper sulfide (Cu 2 S) [5] and copper organics (CuTCNQ) [6] have been integrated into RRAM devices since its compatibility with Cu interconnection process in complementary metal oxide semiconductor (CMOS) technology.…”

Section: Introductionmentioning

confidence: 99%

Influences of preparation methods on bipolar switching properties in copper nitride films

Zhou

et al. 2013

Surface and Coatings Technology

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Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer

Cited by 9 publications

References 29 publications

Resonance Raman spectroscopy studies on photoinduced AgTCNQF₄ charge transfer and its electrical switching behavior

Resonance Raman spectroscopy studies on photoinduced AgTCNQF₄ charge transfer and its electrical switching behavior

Macromolecular Memory

Influences of preparation methods on bipolar switching properties in copper nitride films

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Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer

Cited by 9 publications

References 29 publications

Resonance Raman spectroscopy studies on photoinduced AgTCNQF4 charge transfer and its electrical switching behavior

Resonance Raman spectroscopy studies on photoinduced AgTCNQF4 charge transfer and its electrical switching behavior

Macromolecular Memory

Influences of preparation methods on bipolar switching properties in copper nitride films

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Product

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Resonance Raman spectroscopy studies on photoinduced AgTCNQF₄ charge transfer and its electrical switching behavior

Resonance Raman spectroscopy studies on photoinduced AgTCNQF₄ charge transfer and its electrical switching behavior