Resistance to edge recombination in GaAs-based dots-in-a-well solar cells

Abstract

Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

“…3 III-V heterojunctions in general provide much potential for device structures, but the reduced dimensionality (D) of QD/QRs can offer particular advantages over bulk and 2D quantum well (QW) structures; for example, lower threshold currents and higher thermal stability in lasers, 4 and insensitivity to edge states in solar cells. 5 The staggered type-II band alignment of GaSb/GaAs heterostructures [e.g., QW, QD, or QR] leads to spatial separation of carrier species [ Fig. 1(a)] and a reduced recombination rate.…”

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique

“…As can be seen in figure S1 (see supplementary information), at higher voltages the local ideality factor increases approximatively linearly with bias for all devices. These large values normally reflect that the series resistance effect becomes predominant [19,22]. According to the obtained data, the local ideality factor of the PIN and QWR undoped devices is temperature dependent but the rate of change with the temperature is faster for the undoped QWR devices.…”

“…Tingyi et al [22] in InAs/InGaAs quantum dots-in-a-well (DWELL) solar cells and by H. Kim et al [24] in InAs quantum dots solar cells. As can be seen in figure S1 (see supplementary information), at higher voltages the local ideality factor increases approximatively linearly with bias for all devices.…”

“…The J-V characteristics for all devices are analysed further to understand their properties by calculating the local ideality factor, n(V), using the following approximated equation [19,22], To gain better understanding about the different conduction mechanisms occurring in the investigated devices, the local ideality factor versus voltage at different temperatures were determined for all devices as illustrated in figure S1 (see supplementary information). As can be seen, for each device there are two noticeable behaviours observed at low voltage and high voltage regions.…”

Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings

“…These benefits include higher thermal stability and lower threshold currents in lasers 1 and insensitivity to edge states in solar cells. 2 Furthermore, QDs have much potential for use in emerging fields such as quantum information processing. 3 In type-II heterostructures such as the GaSb/GaAs nanostructures studied here, the carrier species are spatially separated and generally have a reduced recombination rate when compared to type-I heterostructures.…”