Resistive limitations to spatially inhomogeneous electronic losses in solar cells

Rau, Uwe; Grabitz, P.; Werner, Jürgen

doi:10.1063/1.1835536

Cited by 83 publications

(49 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In terms of device operation, this inhomogeneity can be visualized as (photo-) diodes with different V OC s connected in parallel, therefore reducing the cell's overall V OC . The effect on V OC stems from the different dark current that each diode will have 24,25 . The local absorber thickness may also affect the local J SC .…”

Section: Resultsmentioning

confidence: 99%

Elucidating the charge carrier separation and working mechanism of CH3NH3PbI3−xClx perovskite solar cells

et al. 2014

View full text Add to dashboard Cite

Developments in organic-inorganic lead halide-based perovskite solar cells have been meteoric over the last 2 years, with small-area efficiencies surpassing 15%. We address the fundamental issue of how these cells work by applying a scanning electron microscopy-based technique to cell cross-sections. By mapping the variation in efficiency of charge separation and collection in the cross-sections, we show the presence of two prime high efficiency locations, one at/near the absorber/hole-blocking-layer, and the second at/near the absorber/electron-blocking-layer interfaces, with the former more pronounced. This 'twin-peaks' profile is characteristic of a p-i-n solar cell, with a layer of low-doped, high electronic quality semiconductor, between a p-and an n-layer. If the electron blocker is replaced by a gold contact, only a heterojunction at the absorber/hole-blocking interface remains.

show abstract

Section: Resultsmentioning

confidence: 99%

Elucidating the charge carrier separation and working mechanism of CH3NH3PbI3−xClx perovskite solar cells

et al. 2014

View full text Add to dashboard Cite

show abstract

“…According to the "weak diode" analysis, the V oc loss due to the weak diode is proportional to its size. Also, band-gap fluctuations have been known to affect the performance of CIGS devices [48,49].…”

Section: Secondary Phases Along the Grain Boundariesmentioning

confidence: 99%

Impact of bulk properties and local secondary phases on the Cu2(Zn,Sn)Se4 solar cells open-circuit voltage

Kanevce

Repins

Wei

2015

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

a b s t r a c tAs the development of kesterite solar cells accelerates, the bottlenecks in device performance need to be identified and ways for their circumvention defined and developed. In this work, we use 2-dimensional (2D) numerical simulations to explore possible reasons for low open-circuit voltage (V oc ) in Cu 2 (Zn,Sn) Se 4 (CZTSe) solar cells. High defect density in the CZTSe absorber and at the CZTSe/CdS interface can be significant reasons for V oc deficit, but they do not explain all of the losses observed experimentally. Local deviation from stoichiometry could create secondary phases with a lower band gap compared to the absorber. These secondary phases can be severely harmful to V oc if located in the vicinity of the heterointerface and along the grain boundaries.

show abstract

“…Thin-film semiconductor devices often exhibit characteristics of a network of random diodes connected in parallel [102,[107][108][109] through a resistive electrode to cover those lateral fluctuations by corresponding variations of the local diode parameters. These fluctuations in electronic properties are a result of the material structure fluctuation [109,110] such as grain size, chemical composition, and film thickness between heterointerface and the heterojunction partners [111]. For a correct description of the electronic behavior of cells made from thin films, especially amorphous or polycrystalline absorber material with a large area, the simple equivalent circuit model is not sufficient to describe the bypass behavior of the spatially differentiated layers.…”

Section: Efficiencymentioning

confidence: 99%

Emerging technologies to power next generation mobile electronic devices using solar energy

Jia

Duan

Liu

2009

Front. Energy Power Eng. China

View full text Add to dashboard Cite

Mobile electronic devices such as MP3, mobile phones, and wearable or implanted medical devices have already or will soon become a necessity in peoples' lives. However, the further development of these devices is restricted not only by the inconvenient charging process of the power module, but also by the soaring prices of fossil fuel and its downstream chain of electricity manipulation. In view of the huge amount of solar energy fueling the world biochemically and thermally, a carry-on electricity harvester embedded in portable devices is emerging as a most noteworthy research area and engineering practice for a cost efficient solution. Such a parasitic problem is intrinsic in the next generation portable devices. This paper is dedicated to presenting an overview of the photovoltaic strategy in the chain as a reference for researchers and practitioners committed to solving the problem.

show abstract

Resistive limitations to spatially inhomogeneous electronic losses in solar cells

Cited by 83 publications

References 10 publications

Elucidating the charge carrier separation and working mechanism of CH3NH3PbI3−xClx perovskite solar cells

Elucidating the charge carrier separation and working mechanism of CH3NH3PbI3−xClx perovskite solar cells

Impact of bulk properties and local secondary phases on the Cu2(Zn,Sn)Se4 solar cells open-circuit voltage

Emerging technologies to power next generation mobile electronic devices using solar energy

Contact Info

Product

Resources

About