2014 IEEE International Electron Devices Meeting 2014
DOI: 10.1109/iedm.2014.7046995
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Resistive Memories for Ultra-Low-Power embedded computing design

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Cited by 83 publications
(58 citation statements)
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“…In this work, OxRAM resistors are co-integrated with n-type metal oxide semiconductor (NMOS) transistor access devices in a standard 65 nm CMOS technology (Vianello et al, 2014), allowing for a precise current control. The resistive switching layer is sandwiched between 10 nm thick Ti and 35 nm TiN electrodes.…”
Section: Oxram Electrical Device Analysismentioning
confidence: 99%
“…In this work, OxRAM resistors are co-integrated with n-type metal oxide semiconductor (NMOS) transistor access devices in a standard 65 nm CMOS technology (Vianello et al, 2014), allowing for a precise current control. The resistive switching layer is sandwiched between 10 nm thick Ti and 35 nm TiN electrodes.…”
Section: Oxram Electrical Device Analysismentioning
confidence: 99%
“…In our previous work presented in [4], 1R OxRAM cells made of a 5nm-thick HfO 2 layer and 10nm-thick Ti and TiN electrodes (as described in [5]) have been attacked with a Nd:YAG laser pulse. A bit-set effect has been observed on HRS-state cells (see Fig.…”
Section: Previous Results On Oxram Cellsmentioning
confidence: 99%
“…A ReRAM cell consists in a capacitor-like Metal-Insulator-Metal (MIM) structure [3]. Based on regular materials, these MIM cells can be easily integrated in the back end of line (BEOL) with advanced-nodes CMOS technologies (Fig.2).…”
Section: Iiia Key Features Of Rerammentioning
confidence: 99%
“…The materials used in the memory stack and the integration scheme have a strong influence on the memory performance and reliability. Fig.3 compares the studied devices to different ReRAM technologies [3]. A trade-off exists between memory window and endurance (Fig.3), the HfO 2 /GeS 2 CBRAM and the HfO 2 /Ti OxRAM cells are two representative cases of cells with optimized memory window and endurance, respectively.…”
Section: Iiia Key Features Of Rerammentioning
confidence: 99%
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