Resistive Switching Behavior in Ferroelectric Heterostructures

Abstract

Resistive random‐access memory (RRAM) is a promising candidate for next‐generation nonvolatile random‐access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization‐dominated and defect‐dominated mechanisms. Under certain conditions, these two mechanisms can have synergistic effects on RS behavior. Therefore, RS performance can be effectively improved by optimizing ferroelectricity, conductivity, and interfacial structures. Many methods have been studied to improve the RS performance of ferroelectric heterostructures. Typical approaches include doping elements into the ferroelectric layer, controlling the oxygen vacancy concentration and optimizing the thickness of the ferroelectric layer, and constructing an insertion layer at the interface. Here, the mechanism of RS behavior in ferroelectric heterostructures is briefly introduced, and the methods used to improve RS performance in recent years are summarized. Finally, existing problems in this field are identified, and future development trends are highlighted.

Hf0.5Zr0.5O2-based ferroelectric memristor with multilevel storage potential and artificial synaptic plasticity

“…Phase comparison in Fig. 1f indicates that by inverting the ferroelectric domain, the polarization is antiparallel in these two regions, and the ferroelectric domain in the HZO film can be completely inverted [24,25].…”

Resistive Switching and Redox Process at the BaTiO3/(La,Sr)MnO3 Multiferroic‐Type Interface

“…Materials integrating functionalities that can be switched by external stimuli are of major interest for sensing or data storage technologies, [1][2][3] with a growing research activity on neuromorphic networks. [4][5] In that context, transition metal oxides, with their adjustable chemical composition, are offering an appealing playground for tuning of long-range ordering of magnetic or electric dipoles, and/or for tuning of resistive properties.…”

“…[3,[6][7][8] Random access memories coupling nonvolatility of a ferroic order and of a resistance state to fast switching speed and low energy consumption, are continuously being developed because of the increasing needs in storage and information processing. [1][2][3][4][5][9][10] At the same time, it is necessary to acquire an in-depth understanding of all mechanisms producing resistance changes. Memories use the possibility to switch between two stable states, an ON state with low resistance (LR) and an OFF state with high resistance (HR).…”

“…Electronic devices may involve magnetic tunnel junctions (MTJ) displaying tunneling magnetoresistance (TMR), [11][12] ferroelectric tunnel junctions (FTJ) leading to tunneling electroresistance (TER), [13][14][15][16][17] or metal-insulatormetal (MIM) heterostructures for which the resistive switching is not necessarily linked to a ferroic order. [1][2][18][19][20] The two first systems concern ultra-thin insulating barriers sandwiched between metal electrodes, through which generally occurs direct tunneling of electrons. Differently, the MIM structures and by extension, any junction between differently doped semiconducting (SC) oxides, often involve electrochemical migration of oxygen vacancies and complex charge effects at the interfaces.…”

Nanomaterials Innovation

“…Several interesting properties of nanomaterials have been reported by researchers worldwide. As an interdisciplinary research field, nanotechnology has also played roles in traditional electrical engineering . However, more potential properties of innovative nanomaterials would be explored with innovative characterization approaches.…”