Resistive switching characteristics of sputtered AlN thin films

Tseng, Zong‐Liang; Chen, Lung-Chien; Li, Wan Ying; Chu, Sheng Yuan

doi:10.1016/j.ceramint.2016.03.022

Cited by 18 publications

(5 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Today, a broad range of materials is used for the creation of non-volatile memristive materials. The resistive switching effect was observed in capacitor-like structures involving various oxide layers, in particular, metal oxides [18][19][20][21] and, especially, graphene oxide (GO) [22][23][24], as well as nitrides (AlN, NiN) [25,26], sulfides (MoS 2 ) [27][28][29], and some organic materials [30][31][32]. In addition, it was shown that the ON/OFF current ratio depends on the material used for the preparation of contacts [33,34].…”

Section: Introductionmentioning

confidence: 99%

Resistive switching effects in fluorinated graphene films with graphene quantum dots enhanced by polyvinyl alcohol

et al. 2019

View full text Add to dashboard Cite

Two-layer films of partially fluorinated graphene (PFG) with graphene quantum dots and polyvinyl alcohol (PVA) were prepared by means of 2D printing technology. A stable resistive switching effect with the ON/OFF current ratio amounting from one to 4-5 orders of magnitude is found. The decrease in the PVA thickness leads to a change of the unipolar threshold switchings to the bipolar resistive switchings. The crossbar Ag/PFG/PVA/Ag structures retain their performance up to 6.5% deformation. The switching phenomenon is observed for a period about a year. The traps with characteristic activation energies ∼0.05 eV are suggested to be responsible for resistive switching. The time of charge-carrier emission from the localized states was found to be ∼5 μs. A quality model to describe the resistive switching effect in two-layer films implying the conduction over quantum dots proceeding with the participation of active traps at the PFG/PVA interface is proposed. The structures with the design demonstrated threshold resistive switching have their high potential for development of selector devices integrated to sensor or memristors circuits, for information storage and data processing, for flexible and wearable electronics. The structures with lower PVA thickness and the bipolar threshold switching are perspective for non-volatile memory cells for printed and flexible electronics.

show abstract

Section: Introductionmentioning

confidence: 99%

Resistive switching effects in fluorinated graphene films with graphene quantum dots enhanced by polyvinyl alcohol

et al. 2019

View full text Add to dashboard Cite

show abstract

“…In the 500 nm -thick -film, the resistance at HRS slightly decreases, leading to the pretty reduction of ON/OFF ratio in this sample comparing to the 300 nm -thick -sample. In other reports, the thickness of the insulator layer has influenced the resistive switching characteristics such as the multilevel threshold in amorphous BaTiO 3 [11] or the ON/OFF resistance ratio in AlN material [18]. The thickness of the insulator film varies the roughness and the leakage current as well as the electrical conducting mechanism of structure [11], [18].…”

Section: Discussionmentioning

confidence: 96%

“…A device based on a polymethacrylate with depend azobenzothiazole shows FLASH memory or WORM behaviors according to the film thickness 16 . Besides, the thickness of inorganic thin films also influence on the resistive switching performance of Gd 2 O 3 17 , AlN 18 , amorphous BaTiO 3 11 .…”

Section: Introductionmentioning

confidence: 99%

The effect of content and thickness of chitosan thin films on resistive switching characteristics

Doan

Tran

et al. 2020

Sci. Tech. Dev. J.

View full text Add to dashboard Cite

Introduction: Nowadays, a resistive switching memory using biological, transparent, and environmentally friendly materials is appreciated as the tendency of science and technology, especially in the field of electronic devices. Chitosan (CS), having dominant characteristics such as non-toxic, biocompatible and large capacity, plays as a switching medium in resistive random access memory devices (RRAM). Methods: In our study, CS film was fabricated onto a commercial substrate (FTO) using a simple spin coating method, and the top electrode (Ag) was deposited by a direct-current sputtering technique. Results: The Ag/CS/FTO devices shown the bipolar switching behavior when applying sequence voltage from -1.5 to 2V with the set process in the negative bias and the reset process in the positive bias. The content (0.2, 0.5, and 0.8 wt%) and thickness (100, 300, 500 nm) of chitosan film significantly affect the resistive switching performance. The devices with 0.5 wt%/v concentration and 300 nm-thickness of CS have shown better efficiency than the others with endurance over 100 sweeping cycles and ON/OFF ratio at ca. 2x10 times. Conclusions: It is found that the chitosan material has a large potential candidate for applications in optoelectronic devices.

show abstract

“…Owing to their physical and chemical properties, such as a substantial dielectric constant (∼10), exceptional resistance to corrosion, large electron tunneling barrier height (∼2 eV), and excellent thermal and mechanical stability, Al oxide thin films have found applications in complementary metal-oxide semiconductors and dynamic random-access memory systems, catalysts, optical coatings, protective layers, and as effective diffusion barriers. [11][12][13][14][15] Aluminum nitride exhibits resistive switching characteristics analogous to those shown by oxide materials, 16 as well as the capability for low-energy and high-speed operation. 17 Aluminum nitride is also a promising material for electronic and optoelectronic devices because of its versatile properties, including a wide bandgap (6.2 eV), high melting point (2750 ○ C), good thermal conductivity (2.85 W/cm⋅K at 300 K), exceptional critical electric field (12 MV/cm), high dielectric constant, and good chemical stability.…”

Section: Introductionmentioning

confidence: 99%

Thermal atomic layer deposition of aluminum oxide, nitride, and oxynitride: A mechanistic investigation

Aqueel Ahmed,

Hafiyyan,

Nurhidayati

et al. 2024

AIP Advances

View full text Add to dashboard Cite

Atomic layer deposition (ALD) has been proven to be a versatile method for the deposition of thin films of various materials. It yields films with exceptional conformality and allows tunable film compositions with control of film thickness at the atomic level. Thin films of Al oxide, nitride, and oxynitride are deposited via ALD using Al(CH3)3 (TMA)/AlCl3 with H2O/NH3. Herein, surface chemical reactions are examined using density functional theory calculations to elucidate the adsorption, oxidation, and nitridation of precursors [TMA and AlCl3] as well as the mechanism controlling the composition of Al oxynitride thin films obtained through ALD. The hydrogen-terminated substrate surface is transformed into a CH3/Cl-terminated surface after the reaction with the TMA/AlCl3 precursors. The molecular adsorption of TMA occurs through a spontaneous reaction, whereas that of AlCl3 requires a slight energy input. Although the adsorption energy of AlCl3 is higher than that of TMA, the activation energy and energy change of AlCl3 adsorption are higher and lower than those of TMA, respectively; furthermore, the use of AlCl3 results in the generation of a corrosive by-product (HCl). A similar tendency is observed in the second ALD half reaction, which is oxidation. Nitride formation is endothermic for molecularly adsorbed AlCl3 but exothermic for TMA. Furthermore, the investigation of the exchange reactions between surface moieties and excess gaseous reactants reveals a preference for the substitution of N by O, which is attributed to differences in bond energies between the surface moieties and the surface metal atom, as well as between H2O and NH3.

show abstract

Resistive switching characteristics of sputtered AlN thin films

Cited by 18 publications

References 18 publications

Resistive switching effects in fluorinated graphene films with graphene quantum dots enhanced by polyvinyl alcohol

Resistive switching effects in fluorinated graphene films with graphene quantum dots enhanced by polyvinyl alcohol

The effect of content and thickness of chitosan thin films on resistive switching characteristics

Thermal atomic layer deposition of aluminum oxide, nitride, and oxynitride: A mechanistic investigation

Contact Info

Product

Resources

About