Resistive switching in copper oxide nanowire-based memristor

Nanowire networks are promising memristive architectures for neuromorphic applications due to their connectivity and neurosynaptic-like behaviours. Here, we demonstrate a self-similar scaling of the conductance of networks and the junctions that comprise them. We show this behavior is an emergent property of any junction-dominated network. A particular class of junctions naturally leads to the emergence of conductance plateaus and a “winner-takes-all” conducting path that spans the entire network, and which we show corresponds to the lowest-energy connectivity path. The memory stored in the conductance state is distributed across the network but encoded in specific connectivity pathways, similar to that found in biological systems. These results are expected to have important implications for development of neuromorphic devices based on reservoir computing.

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Comparison on TiO<inf>2</inf> and TaO<inf>2</inf> based bipolar resistive switching devices

Hatem

Almurib

et al. 2014

2014 2nd International Conference on Electronic Design (ICED)

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Resistive switching in copper oxide nanowire-based memristor

Cited by 8 publications

References 10 publications

Memristors based on thermal copper oxide

Memristors based on thermal copper oxide

Emergence of winner-takes-all connectivity paths in random nanowire networks

Comparison on TiO<inf>2</inf> and TaO<inf>2</inf> based bipolar resistive switching devices

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