Resistive switching mechanism in silicon highly rich SiOx (x &amp;lt; 0.75) films based on silicon dangling bonds percolation model

Wang, Yuefei; Qian, Xinye; Chen, Kunji; Fang, Zhong-Hui; Li, Wei; Xu, Jun

doi:10.1063/1.4776695

Cited by 68 publications

(86 citation statements)

References 13 publications

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“…A similar surface-based mechanism is reported in other studies. 14,15 However, the switching mechanism in such studies is fundamentally different to that in reports, including ours 2,16 and subsequent reports, [17][18][19] which concentrate on intrinsic conductivity changes in bulk silicon oxide. Of particular note are two points: first, surface switching can operate only under vacuum conditions, while bulk switching is stable in ambient and, therefore, does not require the hermetic sealing of devices that is required to prevent the rapid oxidation of silicon filaments formed at oxide surface.…”

Section: Introductioncontrasting

confidence: 40%

“…17 Our films are rich in these configurations, as shown by the XPS results from the bulk of the film (obtained by milling the surface layers using an argon ion beam to expose the bulk material) presented in Figure 3(a). Deconvolution of the Si2p XPS peak confirms the presence of three silicon suboxide peaks, Si 1þ , Si 2þ , and Si 3þ , an elemental silicon peak, Si 0 , and Si 4þ peak indicative of fully oxidised silicon.…”

Section: B Xps and Sims Characterisationmentioning

confidence: 97%

“…Such a structure has been investigated in Ref. 17, while comprehensive studies of both surface and bulk based switching are presented in Refs. 18 and 19.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

Mehonić¹,

Buckwell²,

Montesi³

et al. 2015

Journal of Applied Physics

106

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We present an investigation of structural changes in silicon-rich silicon oxide metal-insulatormetal resistive RAM devices. The observed unipolar switching, which is intrinsic to the bulk oxide material and does not involve movement of metal ions, correlates with changes in the structure of the oxide. We use atomic force microscopy, conductive atomic force microscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectroscopy to examine the structural changes occurring as a result of switching. We confirm that protrusions formed at the surface of samples during switching are bubbles, which are likely to be related to the outdiffusion of oxygen. This supports existing models for valence-change based resistive switching in oxides. In addition, we describe parallel linear and nonlinear conduction pathways and suggest that the conductance quantum, G 0 , is a natural boundary between the high and low resistance states of our devices. V C 2015 AIP Publishing LLC. [http://dx

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Section: Introductioncontrasting

confidence: 40%

Section: B Xps and Sims Characterisationmentioning

confidence: 97%

See 1 more Smart Citation

Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

Mehonić¹,

Buckwell²,

Montesi³

et al. 2015

Journal of Applied Physics

106

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“…4(d)]. This gives rise to percolation paths in the 3D space, through which current flows directly from the substrate to the poly-Si plates [17]. This makes the device current abruptly jump to a very high value, switching the resistance of the twoterminal device from a high value (corresponding to the high resistance state -HRS) to a low value (corresponding to the low resistance state -LRS).…”

Section: A Memristive Switching Processesmentioning

confidence: 99%

Physical simulation of Si-based resistive random-access memory devices

Sadi

Wang

Gerrer

et al. 2015

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Abstract-We present a newly-developed three-dimensional (3D) physical simulator suitable for the study of resistive random-access memory (RRAM) devices. We explore the switching behavior of Si-rich silica (SiOx) RRAM structures, whose operation has been successfully demonstrated experimentally at ambient conditions [1]. The simulator couples self-consistently a simulation of oxygen ion and electron transport to a self-heating model and the 'atomistic' simulator GARAND. The electro-thermal simulation model provides many advantages compared to the classical phenomenological models based on the resistor breaker network. The simulator is validated with respect to experimental data, and captures successfully the memristive behavior of the simulated SiOx RRAMs, by reconstructing the conductive filament formation and destruction phenomena in the 3D space. The simulation framework is useful for exploring the little-known physics of SiOx RRAMs, and providing efficient designs, in terms of performance, variability and reliability, for both memory devices and circuits.

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“…Similar behaviour has been reported by other groups as well. 21 In particular, the reset process is harder to achieve in vacuum. This could be due to the lack of environmental oxygen necessary for the re-oxidation of filaments or more extreme loss of oxygen during the electroforming process.…”

Section: (A)mentioning

confidence: 99%

Light-activated resistance switching in SiOx RRAM devices

Mehonić¹,

Gerard²,

Kenyon³

2017

Applied Physics Letters

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We report a study of light-activated resistance switching in silicon oxide (SiOx) resistive random access memory (RRAM) devices. Our devices had an indium tin oxide/SiOx/p-Si Metal/Oxide/Semiconductor structure, with resistance switching taking place in a 35 nm thick SiOx layer. The optical activity of the devices was investigated by characterising them in a range of voltage and light conditions. Devices respond to illumination at wavelengths in the range of 410–650 nm but are unresponsive at 1152 nm, suggesting that photons are absorbed by the bottom p-type silicon electrode and that generation of free carriers underpins optical activity. Applied light causes charging of devices in the high resistance state (HRS), photocurrent in the low resistance state (LRS), and lowering of the set voltage (required to go from the HRS to LRS) and can be used in conjunction with a voltage bias to trigger switching from the HRS to the LRS. We demonstrate negative correlation between set voltage and applied laser power using a 632.8 nm laser source. We propose that, under illumination, increased electron injection and hence a higher rate of creation of Frenkel pairs in the oxide—precursors for the formation of conductive oxygen vacancy filaments—reduce switching voltages. Our results open up the possibility of light-triggered RRAM devices.

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Resistive switching mechanism in silicon highly rich SiOx (x < 0.75) films based on silicon dangling bonds percolation model

Cited by 68 publications

References 13 publications

Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

Physical simulation of Si-based resistive random-access memory devices

Light-activated resistance switching in SiOx RRAM devices

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