Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points

Dutta, Mrinmoy; Senapati, Asim; Ginnaram, Sreekanth; Maikap, S.

doi:10.1016/j.vacuum.2020.109326

Cited by 23 publications

(13 citation statements)

References 23 publications

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“…It results in ReRAM devices stuck at the LRS state and failed to achieve the HRS state, leading to device failure. In accordance with the experimental observations [46][47][48][49][50], our simulation study also point towards the broadening of CF as a dominant mechanism of device failure. At this point it is important to realise that the increasing RESET voltage -leading to deteriorating device response capability and the possibility of device staying at LRS state indefinitely -could mark the onset of imminent device failure.…”

Section: Resultssupporting

confidence: 90%

Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: a phase field study

Roy¹,

Cho²,

Cha³

2022

Preprint

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The morphological evolution of the conducting filament (CF) predominantly controls the electric response of the resistive random access memory (ReRAM) devices. However, the parameters -in terms of the material and the processingwhich control the growth of such CF are plenty. Extending the phase field technique for ReRAM systems presented by Roy and Cha [J. Appl. Phys. 128, 205102 (2020)], we could successfully model the complete SET (low resistance state) and RESET (high resistance state) sates due to the application of sweeping voltage. The key parameters that influence the stability of the multi-cycle I-V response or the endurance behavior are identified. The computational findings of the presented model ReRAM system are practical in correlating the multi-parametric influence with the stability, variability, and reliability of the endurance cycle that affect the device performance and also lead to the device failure. We believe that our computational approach of connecting the morphological changes of the CF with the electrical response, has the potential to further understand and optimize the performance of the ReRAM devices.

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Section: Resultssupporting

confidence: 90%

Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: a phase field study

Roy¹,

Cho²,

Cha³

2022

Preprint

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“…Once the device is in LRS, it continues to be in LRS as long as the trap sites remain filled unless a reasonably high opposite bias voltage (RESET voltage) detraps the carriers from the trap sites, as shown in Figure b. ,− During the RESET process, charge carriers are released from the trap sites, which is called the “erase process”. The erase process lowers the Fermi level of the trapped sites, which reduces direct conduction.…”

Section: Resultsmentioning

confidence: 99%

Resistive Switching in a MoSe₂-Based Memory Device Investigated Using Conductance Noise Spectroscopy

Das

Bera

Samanta

et al. 2021

ACS Appl. Electron. Mater.

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Resistive random access memory (RRAM) devices are widely considered promising candidates for future memory and logic applications. Though their excellent performances have been reported over the years, resistive switching due to various charge conduction mechanisms is still being debated. Here, we report systematic investigations on resistive switching in a MoSe2-based nonvolatile bipolar memory device by measuring current–voltage characteristics and using low-frequency conductance noise spectroscopy in both low and high resistive states. The memory device was fabricated in a metal–insulator–metal configuration by mixing MoSe2 nanoflakes in a poly(methyl methacrylate) (PMMA) matrix sandwiched between the top and bottom electrodes. The device shows an appreciable retention capacity and long cycle endurances in the low resistive state (LRS)/high resistive state (HRS) in repeated measurement cycles. The low-frequency conductance fluctuation power spectra show 1/f noise characteristics in the low resistive state and 1/f 2 behavior in the high resistive state. The 1/f 2 characteristics of the noise power spectra indicate the presence of random telegraphic noise. The stochastic analysis of the current fluctuation in the high resistive state further confirms that the enhanced random telegraphic noise originates from the transport of charge carriers by trap-assisted tunneling in the MoSe2@PMMA matrix.

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“…28 Higher endurance was demonstrated in other BMRs, but the operational voltage was outside the bio-voltage region. 41,43,49 These results indicate that the conduction path may progressively drift to a more resilient configuration over time, which requires a larger amplitude/energy to alter. This can be understood from the general mechanism, in which the lower activation energy in the ionic species responsible for the bio-voltage function can also contribute to an easier (irreversible) dispersion over time.…”

Section: Bmr Performancementioning

confidence: 94%

“…, ∼100 ns) using bio-voltage V reset of −120 mV was possible in a Al/Cu/Ti/MoS 2 /Pt structure. 49 This is because the Reset process can be mainly driven by thermal effect for the rupture of filament without the ionic transport.…”

Section: Bmr Performancementioning

confidence: 99%

Recent progress in bio-voltage memristors working with ultralow voltage of biological amplitude

Yao

2023

Nanoscale

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Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points

Cited by 23 publications

References 23 publications

Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: a phase field study

Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: a phase field study

Resistive Switching in a MoSe₂-Based Memory Device Investigated Using Conductance Noise Spectroscopy

Recent progress in bio-voltage memristors working with ultralow voltage of biological amplitude

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Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points

Cited by 23 publications

References 23 publications

Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: a phase field study

Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: a phase field study

Resistive Switching in a MoSe2-Based Memory Device Investigated Using Conductance Noise Spectroscopy

Recent progress in bio-voltage memristors working with ultralow voltage of biological amplitude

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Product

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Resistive Switching in a MoSe₂-Based Memory Device Investigated Using Conductance Noise Spectroscopy