Resistive switching of rose bengal devices: A molecular effect?

Abstract

The resistive switching behavior of devices consisting of aluminum top electrode, molecular layer ͑rose bengal͒, and bottom electrode ͑zinc oxide and indium tin oxide͒ is examined. By measuring the current versus voltage dependence of these devices for various frequencies and by systematically varying the composition of the device, we show that the switching is an extrinsic effect that is not primarily dependent on the molecular layer. It is shown that the molecular layer is short circuited by filaments of either zinc oxide or aluminum and that the switching effect is due to a thin layer of aluminum oxide at the zinc oxide/aluminum interface.

Anomalous temperature dependence of the current in a metal-oxide-polymer resistive switching diode

“…Instead we argue that in the forming process conducting paths are preformed. Here diffusion of metal atoms can be involved, as indicated by a number of experiments [5,16,20]. However, this does not imply that every time the memory switches, a filament is formed or ruptured by diffusion of atoms.…”

“…A yield of switching diodes of almost unity has been reported. Switching is a generic property of metal oxides [3][4][5][6], the polymer only acts as a current limiting series resistance [7]. The memory is formed by applying a high bias pulse to the pristine diode.…”

On the origin of bistable resistive switching in metal organic charge transfer complex memory cells

“…These results are in good accordance to previously published results on resistive switching in rose bengal molecular devices. 12 The switching in these devices is attributed to the formation of a thin aluminum oxide layer between the top electrode and molecular layer. Cölle et al proposed a similar mechanism for spin-coated polymeric films.…”

Monolithically integrated organic resistive switches for luminance and emission color manipulation in polymer light emitting diodes

“…Different mechanisms have been suggested, including charging and discharging of metallic nanoparticles either deliberately or accidentally introduced into a matrix material, 22 donor-acceptor charge transfer systems 23 or molecular conformation changes. 24 However, recent works strongly evidence that the unipolar switching employed here can be ascribed to the formation and rupture of conductive pathways (filaments) through the organics established after a forming procedure. 25,26 Although there is significant progress in the topic of organic resistive switching, a sophisticated understanding of the mechanisms of formation is still missing making an engineering of the properties of the device challenging.…”