Resistivity switching properties of Li-doped ZnO films deposited on LaB6 electrode

Igityan, A.; Kafadaryan, Y. A.; Aghamalyan, N. R.; Petrosyan, S. I.; Badalyan, G. R.; Vardanyan, Vardan Hoviki; Nersisyan, M. N.; Hovsepyan, Roman; Palagushkin, A. N.; Kryzhanovsky, B.

doi:10.1016/j.tsf.2015.10.064

Cited by 6 publications

(2 citation statements)

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“…Nevertheless, controlled deposition parameter and post-thermal treatment on resistive layer may be not as effective as doping technique to fully adjust the defect concentration. Various dopant elements, such as Al [ 137 , 175 , 176 ], B [ 177 ], Co [ 138 , 139 , 169 , 178 ], Cr [ 110 , 158 ], Cu [ 87 , 140 , 179 ], Fe [ 180 , 181 ], Ga [ 112 , 182 , 183 ], La [ 144 ], Li [ 184 , 185 ], Mg [ 55 , 111 , 145 , 186 – 190 ], Mn [ 91 , 146 – 148 , 191 – 195 ], N [ 56 , 149 ], Ni [ 196 ], S [ 197 ], Sn [ 90 , 198 ], Ta [ 199 ], Ti [ 150 , 151 ], V [ 85 ], and Zr [ 86 ], that have been reported may exhibit decent switching performance. ZnO-based RRAM with multi-element doping, such as Al-Sn [ 136 , 200 ], Ga-Sn [ 201 ], and In-Ga [ 141 – 143 , 202 – 208 ], is also proposed.…”

Section: Reviewmentioning

confidence: 99%

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

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Section: Reviewmentioning

confidence: 99%

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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“…Interestingly, the Li Zn diffusion is governed by the intrinsic defect concentrations. Also, some analysis showed that space-chargelimited-current laws and ohmic are behind the mechanism of conductivity in Li doped ZnO cells [159]. The substitution exchange between Li atoms at interstitial sites results in the replacement of Li by vacancy or Zn, and this effect can be best described using possibilities; the kick-out mechanism or Frank-Turnbull mechanism [158]: Kickout mechanism shown in (4):…”

Section: Figurementioning

confidence: 99%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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