Resolution enhancement with high-transmission attenuating phase-shift masks

Socha, Robert; Conley, Will; Shi, Xuelong; Dusa, Mircea V.; Petersen, John S.; Chen, J. Fung; Wampler, Kurt E.; Laidig, Thomas L.; Caldwell, Roger F.

doi:10.1117/12.360236

Cited by 14 publications

(8 citation statements)

References 8 publications

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“…4. Its optical properties meet the optical requirements of an HT-APSM blank for ArF immersion lithography[2].…”

mentioning

confidence: 88%

“…These advantages have attracted a great deal of attention from industry. Due to advances in the photoresist technologies plus the Cr assist features [2], the side-lobe effect can be minimized and the focus margin can be increased in the high transmittance APSM (HT-APSM) lithographic processes. The employing of HT-APSM to increase the resolution means that ArF immersion lithography could have the potential of reaching the 45 nm-or even the 32 nm-technology nodes [3] within the next two generations.…”

Section: Introductionmentioning

confidence: 99%

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The optical properties of monolayer amorphous Al2O3–TiO2 composite films used as HT-APSM blanks for ArF immersion lithography

Lai

Huang

2007

Microelectronic Engineering

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“…4. Its optical properties meet the optical requirements of an HT-APSM blank for ArF immersion lithography[2].…”

mentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

The optical properties of monolayer amorphous Al2O3–TiO2 composite films used as HT-APSM blanks for ArF immersion lithography

Lai

Huang

2007

Microelectronic Engineering

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“…These benefits include enhanced image contrast, increased exposure latitude (EL) and depth of focus (DOF), and reduced mask error factor (MEF). In addition improved pattern fidelity and resolution have also been cited 13,14 .…”

Section: Introductionmentioning

confidence: 95%

Impact of new MoSi mask compositions on processing and repair

2010

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The mask industry has recently witnessed an increasing number of new MoSi mask blank materials which are quickly replacing the older materials as the standard in high end mask shops. These new materials, including OMOG (opaque MoSi on glass) and high transmission (Hi-T) films, are driven foremost by the need to reduce feature size through resolution enhancement techniques (RET). The subject of this paper is a new low stress, Hi-T material which addresses the challenges presented by transitioning to smaller technology nodes including difficulties with pattern transfer, cleaning and repair. This material, based on currently employed MoSi films, eliminates process steps and utilizes a thinner overall substrate stack than currently used Hi-T schemes allowing an increase in critical dimension (CD) uniformity and feature resolution and more robustness due to a lower aspect ratio. While this new material is MoSi based the small compositional change requires, in some cases, a significant change in processing. Among the most impacted areas are the etch, clean and repair steps. Given the potential for defects to manifest on masks, repair is an invaluable step that can significantly impact the overall yield and lead to a reduction in cycle time 1 . The Carl Zeiss MeRiT ® electron beam mask repair line provides the most advanced repair capabilities allowing a wide range of repairs to be performed on a number of mask types 2 . In a joint effort between MP Mask Technology Center LLC and Carl Zeiss SMT, this paper focuses on the benefits of the new Hi-T mask blank and the challenges it presents to the repair community. The differences between the new low stress, Hi-T material and current Hi-T technologies are presented and on site compositional analysis is performed with x-ray photoelectron spectroscopy (XPS) to illuminate the compositional differences. The development of a repair process for the new material utilizing the on-site Carl Zeiss MeRiT ® MG 45 is presented along with several repairs and their AIMS™ results. KEYWORDSMeRiT ® MG45, AIMS™ 45-193i, mask repair, defect repair, new MoSi materials, Hi-T, high transmission INTRODUCTIONEmbedded attenuated phase shift mask (EAPSM) technology is one of the most utilized RETs in high end mask shops today. The use of MoSi films which allow a small amount of the incident light to be transmitted through the opaque material, commonly 6% at a 180 degree phase shift with respect to the clear regions, allows for higher contrast and the ability to pattern smaller, more complex features than binary masks 3 . However, as the limits of this technology are currently being pushed the need to further reduce feature size and improve the process window has sparked interest in a number of new MoSi based films in order to bridge the gap between current mask manufacturing capabilities and the next technology. The importance of extending MoSi based materials as far as possible can be understood when considering the industry infrastructure. All current tools, materials and processes such as ...

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“…The resolution and alignment requirements for the second level patterning of EAPSMs have generally been satisfied with i-line laser pattern generators. However, high transmission attenuating PSMs use assist features to improve image profiles and to suppress sidelobe printing 1 . The resolution and placement accuracy needed for these features will require improved pattern generation capabilities for the second level printing.…”

Section: Introductionmentioning

confidence: 99%

Second level exposure for advanced phase shift mask applications using the SLM-based Sigma7300 DUV mask writer

et al. 2005

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Phase shifting mask (PSM) development activity is increasing as 193nm optical lithography is extended beyond the 90nm technology node. The requirements on second level mask patterning of advanced PSM have for many applications exceeded the capability of i-line pattern generators, and it is natural for deep-ultraviolet (DUV) pattern generators to be employed for this task. The Sigma7300 DUV mask writer has the attributes required for advanced PSM applications: high resolution, tight CD uniformity and pattern placement, an accurate alignment system, and grid matching to first level exposures. The paper reports system performance for the parameters that constitute the error budget for second level patterning and shows that the mask writer is suitable for second level patterning of advanced PSMs. The alignment system employs the same laser and optics that are used for system calibration and exposure, including a CCD camera that links system calibration to alignment. As a result overlay performance is stable, and is shown to be independent of alignment mark image contrast changes due to different mask materials or resist thicknesses. The mask process uses a conventional chemically amplified resist, and does not require the use of charge dissipating top layers. Combined with throughput that is essentially independent of pattern complexity, DUV pattern generation provides a high yield solution for second level patterning of advanced PSMs for the 65nm and 45nm nodes.

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Resolution enhancement with high-transmission attenuating phase-shift masks

Cited by 14 publications

References 8 publications

The optical properties of monolayer amorphous Al2O3–TiO2 composite films used as HT-APSM blanks for ArF immersion lithography

The optical properties of monolayer amorphous Al2O3–TiO2 composite films used as HT-APSM blanks for ArF immersion lithography

Impact of new MoSi mask compositions on processing and repair

Second level exposure for advanced phase shift mask applications using the SLM-based Sigma7300 DUV mask writer

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