The present understanding of this work is about to evaluate and resolve the temperature compensation point (TCP) or zero temperature coefficient (ZTC) point for a sub-20 nm FinFET. The sensitivity of geometry parameters on assorted performances of Fin based device and its reliability over ample range of temperatures i.e. 25 0 C to 225 0 C is reviewed to extend the benchmark of device scalability. The impact of fin height (H Fin), fin width (W Fin), and temperature (T) on immense performance metrics including on-off ratio (I on /I off), transconductance (g m), gain (A V), cutoff frequency (f T), static power dissipation (P D), energy (E), energy delay product (EDP), and sweet spot (g m f T /I D) of the FinFET is successfully carried out by commercially available TCAD simulator Sentaurus TM from Synopsis Inc.