2014
DOI: 10.2298/fuee1404613m
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Resolving the bias point for wide range of temperature applications in High-k/Metal Gate nanoscale DG-MOSFET

Abstract: This article investigates the Zero-Temperature-Coefficient (ZTC) bias point and its associated performance metrics of a High-k Metal Gate (HKMG) DG-MOSFET in nanoscale. The ZTC bias point is defined as the point at which the device parameters are independent of temperature. The discussion includes sub threshold slope (SS), drain induced barrier lowering (DIBL), on-off current ratio (Ion/Ioff), transconductance (gm), output conductance (gd) and intrinsic gain (AV). From the results, it is conf… Show more

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Cited by 9 publications
(7 citation statements)
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“…According to ITRS, the drain bias has been fixed at V DD = 1.0 V [19]. To study the analog performance, simulation is carried out with drain to source voltage V DS = 0.5 V (which is half of the supply voltage i.e., V DD /2) [26] with a variable gate to source voltage V GS = 0-1.0 V. Threshold voltage (V th ) is extracted using constant current (I D = 10 À6 A/lm) definition from the I D -V GS transfer characteristic.…”
Section: Device Description and Simulation Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…According to ITRS, the drain bias has been fixed at V DD = 1.0 V [19]. To study the analog performance, simulation is carried out with drain to source voltage V DS = 0.5 V (which is half of the supply voltage i.e., V DD /2) [26] with a variable gate to source voltage V GS = 0-1.0 V. Threshold voltage (V th ) is extracted using constant current (I D = 10 À6 A/lm) definition from the I D -V GS transfer characteristic.…”
Section: Device Description and Simulation Methodsmentioning
confidence: 99%
“…In a recent work, an optimization of bias point on the High-k Metal gate (HKMG) DG-MOSFET in nanoscale at wide variation of temperature has been reported [19]. To the best of our knowledge, this is probably the unique approach for investigating a detailed analysis of inflection point to examine its reliability issues over wide range of temperature variations (100-400 K) for both analog and RF applications of DG MOSFET with HKMG technology.…”
Section: Introductionmentioning
confidence: 99%
“…The multi-gate structures like Double Gate (DG) MOSFET fabricated on SOI wafers is one of the most promising candidates due to its attractive features of low leakage current, high current drivability (I on ), transconductance (g m ), reduced short channel effects (SCEs), steeper subthreshold slopes, and suppression of latch-up phenomenon [26]- [31]. In a recent work [32]- [34], a detailed analysis of inflection point to examine its reliability issues over a wide range of temperature variations (100 K-400 K) for both analog and RF applications of DG MOSFET with HKMG technology was reported.…”
Section: Significance Of Ztc Biasmentioning
confidence: 99%
“…According to available literature, it seems that at the moment application of Python in measurements is the most popular in advanced scientific experiments. Examples of applications which might find approach proposed in this paper useful are [28][29][30][31][32].…”
Section: Introductionmentioning
confidence: 99%