Resonance-free frequency response of a semiconductor laser

Abstract

We show experimentally and analytically that fast spontaneous recombination lifetime, τB,spon, leads to resonance-free frequency response in semiconductor lasers, and as a consequence higher speed operation. Faster τB,spon is obtained by a reverse-bias collector field pinning and tilting a dynamic (removable) charge population in a thin base (τt∼ps), allowing only “fast” recombination. We show resonance-free optical response on a prototype transistor laser (TL) with τB,spon∼29 ps. Based on the TL, a resonance-free tilted-charge diode laser, is demonstrated with a 10.3 Gb/s “clean open-eye” signal achieved with a −3 dB bandwidth device of only 5.6 GHz.

Surface Emission Vertical Cavity Transistor Laser

“…With quantum-wells inserted in the base of the HBT and with cavity modifications (for higher cavity Q) it is possible to make, using HBT base recombination (I B ), a quantum-well transistor laser (QWTL) [13]- [16], a three-port laser. The QWTL has demonstrated fast spontaneous recombination lifetime (<25 ps), a reduced photon-carrier resonance amplitude (a resonance-free laser), a 20 GHz signal modulation bandwidth [17], and simultaneous electrical and optical "open-eye" signal operation at 40 Gb/s data rate modulation [18].…”

Threshold base current and light power output of symmetric and asymmetric multiple Quantum-Well Transistor Lasers

“…As a consequence, laser emission emerges in a direction normal to the current flow in the transistor. Since its announcement, almost all the experimental reports about the TL appearing in the literature have come from the group led by Feng and Holonyak [1][2][3][4][5][6][7][8][9]. The group also developed analytical models for TL, mainly based on charge control analysis and rate equation models [4,5,[7][8][9], to explain the current-voltage and light-current characteristics and the modulation bandwidth.…”

“…The group also developed analytical models for TL, mainly based on charge control analysis and rate equation models [4,5,[7][8][9], to explain the current-voltage and light-current characteristics and the modulation bandwidth. They also developed a microwave circuit model [8]. Analytical and numerical models for terminal currents, modulation bandwidth etc of TLs are also developed by few other groups [10 -12].…”

Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature

“…The transistor laser (TL) has been demonstrated with: roomtemperature continuous wave operation [14], fast spontaneous recombination lifetime (< 25ps) [15], bandfilling and voltage modulation via intracavity photon-assisted tunneling [16], [17], signal mixing via a tunnel junction [18], resonancefree high frequency operation [19], collector feedback control of laser power [20], and simultaneous 20 Gb/s electrical and optical transmission at low temperature [21]. Recently, low temperature operation of a vertical-cavity surface-emitting transistor laser (VCTL) has also been demonstrated [22].…”