Resonant-Cavity Light-Emitting Diodes (RCLEDs) Made From a Simple Dielectric Coating of Transistor Outline (TO)-Can Packaged InGaN LEDs for Visible Light Communications

Tsai, Chia-Lung; Lu, Yichen; Ko, Sun–Chien

doi:10.1109/ted.2016.2561621

Cited by 13 publications

(3 citation statements)

References 25 publications

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“…-resonant-cavity (RC) µLEDs: RC µLEDs can offer higher light extraction efficiency and reduced output beam divergence [50,51]. As a result, improved crosstalk performance can be achieved in the system with gains similar to ones obtained with the use of blocking apertures.…”

Section: A Butt-couplingmentioning

confidence: 99%

Ultra-Low Cost High-Density Two-Dimensional Visible-Light Optical Interconnects

Bamiedakis

McKendry

Xie

et al. 2019

J. Lightwave Technol.

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Visible light communications has attracted considerable interest in recent years owing to the ability of lowcost light emitting diodes (LEDs) to act both as illumination sources and data transmitters with moderate data transmission rates. In this article we propose the formation of ultra-low cost visible light integrated optical links by interfacing dense micropixelated LED arrays with matching multi-layered multimode polymer waveguide arrays. The combination of these two optical technologies can offer relatively high aggregate data densities ≥ 0.5 Tb/s/mm 2 using very low cost components that can be directly interfaced with CMOS electronics and integrated onto standard PCBs. Here, we present the basic system design and report the first proof-of-principle demonstration of such a visible light system employing 4×4 µLED arrays on a pitch matching fourlayered waveguide array samples. Different interconnection topologies and light coupling schemes are investigated and their performance in terms of loss and crosstalk is compared. Data transmission of 2.5 Gb/s with a BER within the forward-error correction threshold of 3.8×10 -3 is achieved over a single µLEDwaveguide channel using PAM-4 modulation and equalization. The results presented here demonstrate the potential of such ultra-low cost visible light optical interconnects.

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Section: A Butt-couplingmentioning

confidence: 99%

Ultra-Low Cost High-Density Two-Dimensional Visible-Light Optical Interconnects

Bamiedakis

McKendry

Xie

et al. 2019

J. Lightwave Technol.

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“…Gallium nitride-based optoelectronic devices were extensively used as light-emitting diodes (LEDs), resonant-cavity light-emitting diodes (RC-LEDs), − and vertical-cavity surface-emitting lasers (VCSELs) . Face-up type structures, flip chip-type structures, , and vertical-type structures have been reported for different current injection processes.…”

Section: Introductionmentioning

confidence: 99%

Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors

Shiu,

Ke,

Chen

et al. 2024

ACS Omega

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A vertical-type InGaN light-emitting diode with a resonant cavity was demonstrated with a 9 μm aperture size and a short cavity formed by hybrid distributed Bragg reflectors (DBRs). The approach involved designing epitaxial structures and utilizing an electrochemical etching process to convert heavily doped n-type gallium nitride (n + -GaN) layers into porous GaN layers as a porous-GaN DBR structure. Thirteen pairs of the conductive porous-GaN:Si/GaN:Si DBR structure provided a vertical current path in a vertical-type light-emitting diodes (LED) structure. The LED epitaxial layers were separated from sapphire for membranetype LED structures through a laser lift-off process. During the free-standing membrane fabrication process, the dielectric DBR deposited on ITO/p-GaN:Mg layers was inverted from top to bottom, thereby establishing the concept of higher reflectivity for the bottom DBR compared to the porous-GaN DBR. The physical cavity length was reduced from about 2.3 μm for the LED membrane to 0.74 μm for the membrane-type LED with the embedded porous-GaN DBR structure. The divergent angles and line width of EL emission light were reduced from 124°/31.7 nm to 44°/3.3 nm due to the resonant cavity effect. The membrane-type LED structures with hybrid DBRs consisted of small divergent angles, narrow line width, and vertical current injection properties that have potential for directional emission light sources and verticalcavity surface-emitting diode laser applications.

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“…GaN 属于第三代宽禁带半导体材料，它与 AlN、InN 组成的合金材料的禁带宽度可以在 0.7～6.2eV 之间连续可调，覆盖了从红外到紫外的光谱范围，是一种制作发光器件的理想材料 [1,2] 。近年来，采用 GaN 材料制作的发光二极管 (Light Emitting Diode，简称 LED)已经取得了巨大的进步，其寿命、可靠性、功耗及响应速度与传统发光器件相比都具有显著的优势 [3,4] ，已广泛应用于室内照明、景观照明、汽车灯具、显示屏、背光源等领域。另外，共振腔结构可以增强器件的发光强度、提高光谱纯度、优化出光方向性。因此，基于 GaN 材料的共振腔发光二极管(Resonant Cavity Light Emitting Diode，简称 RCLED)作为一种新型的高效半导体光电器件受到了人们的广泛关注。 RCLED 是一种将有源区置于法布里-珀罗(Fabry-Perot，简称 FP)光学谐振腔中的特殊结构 LED，相比于传统结构的 GaN 基 LED，RCLED 具有许多独特的优势。微腔效应在谐振腔中发生 [5,6] ，有源区产生的自发辐射光在腔中发生谐振，进而提高了出射光的光谱纯度，改善了光辐射的方向性。同时，由于器件的光辐射特性决定于腔共振模式，RCLED 发光波长还具有更好的温度及电流稳定性。因此，RCLED 具有光谱线宽窄、出光效率高、光输出方向性好、波长稳定性强等诸多优点。在可见光通信、无散斑照明、高分辨显示、光学扫描仪、医学美容仪等领域 [7][8][9][10] 具有广阔的应用前景。早在 1992 年，Schubert 等人 [11] 根据 FP 腔原理首次提出 RCLED 的概念，由此开启了关于 RCLED 新的研究方向。伴随着 GaN 材料和器件的快速发展，GaN 基 RCLED 也引起了研究者们的广泛关注 [12][13][14][15][16][17][18][19]…”

unclassified

Study on the effect of top mirror on the performance of GaN-based resonant cavity light-emitting diode

厦门大学¹

2021

Acta Physica Sinica

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Resonant-Cavity Light-Emitting Diodes (RCLEDs) Made From a Simple Dielectric Coating of Transistor Outline (TO)-Can Packaged InGaN LEDs for Visible Light Communications

Cited by 13 publications

References 25 publications

Ultra-Low Cost High-Density Two-Dimensional Visible-Light Optical Interconnects

Ultra-Low Cost High-Density Two-Dimensional Visible-Light Optical Interconnects

Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors

Study on the effect of top mirror on the performance of GaN-based resonant cavity light-emitting diode

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