Resonant cavity longwave SiGe-Si photodetector using a buried silicide mirror

Helium implanted silicon waveguide photodetectors for optical power monitors

“…Annealing the implanted samples at 200, 300 or 350°C successfully reduced the insertion loss without decreasing the enhanced photocurrent. The responsivity to absorbed light is useful to compare the capability to convert optical power to photocurrent, and is defined as: 9'- (1) where, I is photocurrent and P is the optical power loss (including the coupling loss and the absorption to produce the photocurrent). OW178.pdf Fig.…”

“…Silicon therefore is normally unsuitable as a photodetector for the 1.2-1.6ptm wavelength range. Different approaches have been investigated for making integrated photodetectors on SOI PLCs including the use of silicon germanium (SiGe) photodetectors [1], implantation of fluorine ions to enhance the infrared response of metal-silicon-metal (MSM) photodetectors [2] and the hybrid integration of Ill-V photodetectors. Here, we investigate a new approach based on implanting helium ions to enhance the absorption of below bandgap photons in a p-n diode Si waveguide.…”

Normal-incident SiGe/Si MQW photodetectors operating at 1.3 μm

“…The total strain of the MQWs can be zero. Thirdly, using a resonant cavity structure, will effectively increase the absorbing length, therefore, increasing the quantum efficiency [7][8][9}…”

DC magnetron sputter‐deposited tungsten silicide films for microelectronic applications

“…In addition to these, WSi was used as a possible ground plane structure for radio and microwave frequency devices, which brings improvement in crosstalk power suppression capability in Si substrates (Hamel et al, 2000). WSi can also be used as reflecting layers for photodiodes (Carline et al, 1998), and as buried metal layers in bipolar transistors (Goh et al, 1999).…”