Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperature

Abstract

This letter reports the first observation of resonant tunneling negative differential resistance (NDR) through a double barrier GaAs-AlxGa1−xAs -GaAs-AlxGa1−x As-GaAs structure at room temperature. The NDR yields radio frequency oscillations at 300 K in a coaxial cable circuit that compare closely to those of a standard 1N3716 tunnel diode.

An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs

“…We now compare in Table 1 our simulation (including scattering) directly with experiments. Peak to valley ratios of experimental AlGaAs RTDs are compared with the ones extracted from simulations at room temperature and 77 K [9,10]. A good overall agreement is reached.…”

“…Comparisons of measured and simulated peak-to-valley ratios for experimental RTDs of Refs [9]. and[10] …”

Intervalley Scattering and the Role of Indirect Band Gap AlAs Barriers: Application to GaAs/AlGaAs Quantum Cascade Lasers

“…Realisation of the device in the form of an AlGaAs layer sandwiched between two GaAs regions was achieved by Chang, et al [2] soon after. Following the work of Sollner [3] who demonstrated operation in the terahertz region, research interest escalated and room temperature operation was achieved in 1985 [4,5]. Such structures have since been shown to be both of broad physical and of technological interest (Aleshkin et al [6]).…”

“…4 AsGaAs-Ga 0.6 Al 0. 4 As structures via states above the AlGaAs potential barrier and later confirmed that these resonances arose from confined X-states in the Brillouin zone [8].…”

“…4 AsGaAs-Ga 0.6 Al 0. 4 As structures via states above the AlGaAs potential barrier and later confirmed that these resonances arose from confined X-states in the Brillouin zone [8]. The importance of such scattering processes in explaining experimental data was confirmed theoretically in the many-band pseudo-potential model calculations of Marsh [9] and also by Liu [10].…”