Response of sputtered titanium films on silicon to thermal oxidation

Brama, Y.L.; Sun, Yong; Dangeti, S.R.K.; Mujahid, Mohammad

doi:10.1016/j.surfcoat.2004.11.016

Cited by 14 publications

(15 citation statements)

References 23 publications

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“…It can be seen that calcination as low as 300°C was able to produce a significant reduction in C XPS signal, with a further slight C reduction at 500°C before an increase in C contribution was observed for heating at 700°C. The increase in C at 700°C was accompanied by an increased Si contribution, pointing toward the onset of film spallation at this temperature, consistent with previous reports on TiO 2 thin films [36]. This process exposes small regions of the Si substrate through cracks in the film, simultaneously exposing C impregnated in the bulk of the TiO 2 film.…”

Section: Chemical Compositionsupporting

confidence: 90%

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Composition and properties of RF-sputter deposited titanium dioxide thin films

et al. 2021

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Section: Chemical Compositionsupporting

confidence: 90%

“…Previous work has attributed these changes to an increase in crystallinity of TiO 2 and smaller particles' ripening' into larger ones [6,16,46]. 600°C with film thickness and temperature being critical factors in the phase transition [17,37]. The system studied here shows markedly different crystallisation behaviour.…”

Section: Chemical Compositionmentioning

confidence: 76%

Composition and properties of RF-sputter deposited titanium dioxide thin films

et al. 2021

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“…The Ti primer provides a platform for the spontaneous modification of various surfaces including quartz and Si (see below). Since Ti is known to adhere to numerous materials possessing a wide range of conductivity, ,, several different substrates were tested: Au, Al foil, SiO x , glass, and high density polyethylene (HDPE) surfaces. Raman spectroscopy confirmed bonding of NAB to Ti primer layers on Au, Al foil, SiO x on Si, and glass (see Supporting Information, Figures S-2 and S-3).…”

Section: Resultsmentioning

confidence: 99%

Derivatization of Optically Transparent Materials with Diazonium Reagents for Spectroscopy of Buried Interfaces

2009

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This paper presents a method to derivatize a wide variety of substrate materials that are frequently used in spectroscopic characterizations with molecular layers through the reduction of aromatic diazonium reagents. The method relies on an ultrathin (5 nm) layer of a reactive metal (e.g., Ti or Al) deposited as a primer that subsequently mediates the reduction of aromatic diazonium reagents from acetonitrile solution. Following surface modification, the Ti can be oxidized to provide a passivated support surface. Raman, Infrared, UV-vis and X-ray photoelectron spectroscopic techniques are used to characterize the molecular layers on the metal primer surface. When a Ti primer layer is derivatized via diazonium reduction, the molecule is shown to be present on the ultrathin Ti layer on Au, Al, quartz, Si/SiO(x), glass, and polyethylene surfaces. For molecules bound to a Ti primer, the molecular layer was found to be stable to sonication in acetone or acetonitrile, a 1 h exposure to boiling water, and a 30 min exposure to 0.1 M acid or base. The approach also permits spectroscopic characterization of buried thin-film molecular layers on optically transparent substrates after deposition of thick top metal contacts.

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“…[1][2][3][4][5] For example, in a dielectric barrier discharge-TiO 2 photocatalyst hybrid system, the efficiencies of NO and SO 2 removal could be enhanced by the addition of TiO 2 photocatalysts in the dielectric barrier discharge process. In this process, the TiO 2 photocatalysts were activated by the UV light emitted from the dielectric barrier discharge.…”

Section: Introductionmentioning

confidence: 99%

Prediction of TiO<SUB>2</SUB> Thin Film Growth on the Glass Beads in a Rotating Plasma Chemical Vapor Deposition Reactor

Kim

Kim²

2010

J. Nanosci. Nanotech.

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We calculated the concentration profiles of important chemical species for TiO2 thin film growth on the glass beads in the TTIP + O2 plasmas and compared the predicted growth rates of thin films with the experimental measurements. The film thickness profile depends on the concentration profile of TiO(OC3H7)3 precursors in the gas phase because TiO(OC3H7)3 is the main precursor of the thin film. The TTIP concentration decreases with time, while the TiO(OC3H7)3 concentration increases, and they reach the steady state about 2 approximately 3 sec. The growth rate of TiO2 film predicted in this study was 9.2 nm/min and is in good agreements with the experimental result of 10.5 nm/min under the same process conditions. This study suggests that a uniform TiO2 thin film on particles can be obtained by using a rotating cylindrical PCVD reactor.

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Response of sputtered titanium films on silicon to thermal oxidation

Cited by 14 publications

References 23 publications

Composition and properties of RF-sputter deposited titanium dioxide thin films

Composition and properties of RF-sputter deposited titanium dioxide thin films

Derivatization of Optically Transparent Materials with Diazonium Reagents for Spectroscopy of Buried Interfaces

Prediction of TiO<SUB>2</SUB> Thin Film Growth on the Glass Beads in a Rotating Plasma Chemical Vapor Deposition Reactor

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