Response to “Comment on ‘Direct evidence of nanocluster-induced luminescence in InGaN epifilms’ ” [Appl. Phys. Lett. 87, 136101 (2005)]

Chang, Hsiu-Ju; Chen, C. H.; Chen, Y. F.; Lin, Tai‐Yuan; Chen, L. C.; Chen, K. H.; Lan, Zon Huang

doi:10.1063/1.2058204

Cited by 3 publications

(3 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As shown in the J-V curve of Dev3, the J-V character in the range of 1-3V is different from those in the other ranges. This phenomenon may relate to the "bistable state" or "memory effect" of the devices, as discussed in the literature [6][7][8][9][10][11]. In the range of 12-15 V, the device is undergoing destruction process.…”

Section: Resultsmentioning

confidence: 99%

Organic Light-Emitting Diodes with Varying Thickness of Bathocuproine Layer

Zhong

Fang

Cao

2011

MSF

View full text Add to dashboard Cite

A series of organic light-emitting diodes (OLEDs) with or without a bathocuproine (BCP) layer inserted in the control device indium-tin-oxide (ITO)\ N,N'-bis-(1-naphthl)-diphenyl-1,1'- biphenyl-4,4'-diamine (NPB)\ tris(8-quinolinolato) aluminum (Alq)\LiF\Al have been fabricated and measured. Different influences of the BCP layer on electroluminescence (EL) of the OLEDs have been investigated. It is found that the highest efficiency of the OLED with a 1-nm BCP layer inserted between NPB and Alq increases to 3.99 cd/A, ~48% higher than that of the control device, while the EL efficiencies of the devices with other structures are similar to the latter. This phenomenon is ascribed to the hole-blocking effect of the BCP layer and the resulting higher density of carriers in the emission zone of the OLED. The EL performances of the OLEDs with different thicknesses of BCP layer are also discussed in details.

show abstract

Section: Resultsmentioning

confidence: 99%

Organic Light-Emitting Diodes with Varying Thickness of Bathocuproine Layer

Zhong

Fang

Cao

2011

MSF

View full text Add to dashboard Cite

show abstract

“…Metallic bonding appears more and more attractive for microelectronic and microtechnology applications such as MEMS sealing, power devices, heat dissipation or three-dimensional (3D) integration. Many bonding processes, thermo-compression bonding [1], anodic bonding [2], plasma activated bonding [3], eutectic bonding [4] and polymer bonding [5] are currently being investigated. Among all these available technologies, direct bonding is a worthwhile alternative as it does not require either ultrahigh vacuum, compressive force, additional material or low temperature processes.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Integration Phenomena of metal-metal direct bonding technology

Cioccio

Baudin²,

Gergaud

et al. 2014

ECS Trans.

View full text Add to dashboard Cite

Direct metal bonding represents an advanced joining technology that allows vertical stacking with electrical conduction and even heat dissipation. Direct metal bonding is performed at room temperature, under ambient air and atmospheric pressure. Thus, for most metals used as bonding layers, it involves a surface metal oxide layer. The bonding interface saddles with a trapped oxide layer. This study focuses on the analysis and modeling of metal-metal direct bonding with regards to integration stages such as annealing or layer stacking.

show abstract

“…Metallic bonding appears more and more attractive for microelectronic and microtechnology applications such as MEMS sealing, power devices, heat dissipation or three-dimensional (3D) integration. Many bonding processes, thermo-compression bonding (1), anodic bonding (2), plasma activated bonding (3), eutectic bonding (4) and polymer bonding (5) are currently investigated. Among all these available technologies, direct bonding is a worthwhile alternative as it does not require either ultra high vacuum, compressive force, additional material or low temperature processes.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Titanium Direct Bonding Mechanism

et al. 2013

View full text Add to dashboard Cite

Direct metal bonding represents an advanced joining technology that allows vertical stacking with electrical conduction and even heat dissipation. For most metals used as bonding layers, direct bonding when operating at ambient air involves metal oxides. The bonding interface saddles with a trapped oxide layer that might affect electrical conduction and even complete sealing of bonding interface. Titanium especially, because of its high affinity with oxygen, makes oxide free direct bonding very difficult. In the mean time, the remarkable getter effect of Ti matrix allows the dissolution of oxygen during post bonding annealing. In this paper, the bonding limits with regards to the titanium thickness have been investigated. The key role of layer roughness on the bonding quality and energy has been pointed out. A titanium thickness below 10nm appears as a limit for an oxide free bonding.

show abstract

Response to “Comment on ‘Direct evidence of nanocluster-induced luminescence in InGaN epifilms’ ” [Appl. Phys. Lett. 87, 136101 (2005)]

Cited by 3 publications

References 16 publications

Organic Light-Emitting Diodes with Varying Thickness of Bathocuproine Layer

Organic Light-Emitting Diodes with Varying Thickness of Bathocuproine Layer

Modeling and Integration Phenomena of metal-metal direct bonding technology

Evaluation of Titanium Direct Bonding Mechanism

Contact Info

Product

Resources

About