Reticle CD-SEM for 65-nm technology node and beyond

Schlueter, Gerhard W.B.; Nakamura, Takayuki; Matsumoto, Jun; Seyama, Masahiro; Whittey, John M.

doi:10.1117/12.568270

Cited by 4 publications

(1 citation statement)

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“…• The nearly flat wafer and mask samples are usually not tilted, but moved only in the x-and y-directions and a few micrometres in the z-direction for focusing the measurement object [7] (focusing the primary beam by changing current in the magnetic coils is usually avoided because a change in current introduces temperature changes in the coils and thus instability of SEM) • As the electron emitter usually a high brightness thermal field emitter (Zr/O/W(1 0 0) Schottky type) is chosen, which in comparison with a cold field emission cathode provides a far better stability of operation, although the cold field emitter still offers improved resolution. There is work under way to better understand and further improve the performance of Schottky emitters [8,9].…”

Section: Basic Components Of Sem Instrumentationmentioning

confidence: 99%

Model-based SEM for dimensional metrology tasks in semiconductor and mask industry

Frase¹,

Gnieser²,

Bosse³

2009

J. Phys. D: Appl. Phys.

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The requirements on the use of scanning electron microscopy (SEM) as a measurement technique for the process control of dimensional parameters are most challenging in the production of masks and wafers in the semiconductor industry. Subtle details of SEM signal variations have to be thoroughly understood to be able to monitor and trace small process variations to changes in dimensional parameters of the features to be controlled. This paper reviews the fundamentals, special performance features and applications of existing SEM image contrast simulation packages based on Monte Carlo methods.

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Section: Basic Components Of Sem Instrumentationmentioning

confidence: 99%

Model-based SEM for dimensional metrology tasks in semiconductor and mask industry

Frase¹,

Gnieser²,

Bosse³

2009

J. Phys. D: Appl. Phys.

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Characterization for the photomask fabrication based on a high-resolution technique with a non-chemically amplified resist and a post-exposure bake

Miyoshi

Taniguchi

2016

Microelectronic Engineering

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Fabricating a high-resolution mask with improved line-edge roughness by using a nonchemically amplified resist and a postexposure bake

Miyoshi¹,

Taniguchi

2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors have developed a high-resolution technique for fabricating photomasks at the 10-nm halfpitch logic nodes and beyond. Current mask-manufacturing techniques use a chemically amplified resist (CAR) that has a complex mechanism of acid generation, complicating the criteria for selecting the polymer and the quencher for industrial purposes. Thus, it is important to study fabricating masks with non-CARs. The authors exposed a non-CAR, diluted ZEP520A, to variable-shaped electronbeam lithography and used a postexposure bake (PEB) to modify the resist. Studying how the PEB temperature affected the non-CAR and resultant masks, the authors demonstrate that their technique can produce high-resolution structures. By measuring the critical dimensions (CDs), the authors show that the PEB shrunk, enlarged, and retained the size of 1:1 line-and-space, isolated space, and isolated line patterns, respectively. By optimizing the PEB temperature, the authors improved the line-edge roughness (LER) of the 1:1 line-and-space and isolated space CDs by $40%. To understand how the PEB affected the resultant structures, the authors measured the hardness of cured resists with and without a PEB at various temperatures. Optimizing the PEB temperature of the non-CAR increased the resist contrast, annealing the resist and improving the LER. As such, their technique is capable of high resolutions on the order of 20 nm. The insights the authors gained from optimizing the PEB might be useful when fabricating next-generation masks.

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Reticle CD-SEM for 65-nm technology node and beyond

Cited by 4 publications

References 0 publications

Model-based SEM for dimensional metrology tasks in semiconductor and mask industry

Model-based SEM for dimensional metrology tasks in semiconductor and mask industry

Characterization for the photomask fabrication based on a high-resolution technique with a non-chemically amplified resist and a post-exposure bake

Fabricating a high-resolution mask with improved line-edge roughness by using a nonchemically amplified resist and a postexposure bake

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