Reverse recovery characteristics and defect distribution in an electron-irradiated silicon p–n junction diode

Kang, Soo-Bin; Eom, Taejong; Kim, S.J; Kim, H.W; Cho, J.Y; Lee, Chongmu

doi:10.1016/j.matchemphys.2003.11.030

Cited by 5 publications

(4 citation statements)

References 8 publications

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“…Activation energy of the latter centres has been evaluated from the Arrhenius plots and found to be close to values published in literature. The DLTS peak at around 170 K was observed in the hadron heavily irradiated Si detectors [11] and debated as a feature of either inter-centre recombination [12], or cluster type defects [3,[13][14][15] and VOH complex [5,6]. A position of the latter peak in between of V =/− 2 and V −/0 2 peaks within a DLTS spectrum and the strongest amplitude hint at vacancy ascribed clusters.…”

Section: Resultsmentioning

confidence: 99%

“…It is desirable to coordinate an introduction of the recombination centres into the diode base region, responsible for the reverse recovery time (RRT) from the on-state conduction modulation regime within i-layer, with inevitable creation of the generation traps, which determine a leakage current of PIN diode [2][3][4][5][6][7]. This issue can be partially solved when technological handling of the type of recombination / generation defects and position of levels within band gap, associated with these defects, is feasible.…”

Section: Introductionmentioning

confidence: 99%

“…In general, only partial optimization within multi-factor task can be achieved by trade-off between the dynamic and static parameters in technology of fast high power diodes. The modern technologies [2][3][4][5][6] of the improved reverse recovery and voltage drop of the on-state junction characteristics are based on elaborated radiation and heat treatment techniques [1][2][3][4][5][6] for industrial fabrication of the commercial high-voltage high-frequency diodes. In this work, a study of the carrier lifetime as well as reverse recovery time constants (RRT) has been performed on float zone (FZ) silicon PIN diodes and wafer structures to identify the optimal technological steps for formation by irradiations of δ-layer of the enhanced recombination and to suppress generation centres by annealings.…”

Section: Introductionmentioning

confidence: 99%

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Anneal-induced variations of the recombination characteristics in 2 MeV proton irradiated Si structures

Višniakov¹

2008

Lithuanian J. Phys.

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Comparative study of the carrier recombination and generation lifetime as well as reverse recovery durations, dependent on proton irradiation fluence and annealing regimes, has been performed on FZ silicon PIN diodes and wafer structures. The samples were irradiated by 2 MeV protons with fluences in the range of 7·1012 -7·10 14 p/cm 2 . Carrier decay constituents and values of recombination lifetime have been evaluated by employing a microwave probed photoconductivity transient technique, while deep level spectra ascribed to variations of generation lifetime have been examined by exploiting capacitance deep level transient spectroscopy (DLTS). Variations of six DLTS peaks are examined under 24 h isochronal annealings in the range of temperatures from 80 to 320• C, to clarify threshold of annealing out of the specific traps. Fluence-dependent variations of the effective carrier recombination lifetime in wafer samples after isochronal annealing indicate a weak change in density of the recombination centres. The latter can be ascribed to cluster defects. Fluence-dependent variations of the reverse recovery time (RRT) in diodes after isochronal annealing imply the rearrangement of the recombination and trapping centres, probably within a space charge region (SCR) of clusters.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Anneal-induced variations of the recombination characteristics in 2 MeV proton irradiated Si structures

Višniakov¹

2008

Lithuanian J. Phys.

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“…The compromise between the reverse recovery time and voltage drop of the forward on-stage junction can be achieved by formation either of merged PIN (p + -n-n + structure) and Schottky diodes or hybrid structures of soft-recovery and punch-through diodes. Together with the state-of-the-art technologies, the gold and platinum in-diffusion [1,6] as well as radiation techniques [7,8] are most widely employed for industrial fabrication of the commercial high-voltage highfrequency diodes. Irradiation technologies are usually based on formation of the nearly homogeneous profiles of defects or on combination of the sharp / smooth distribution of recombination centres induced by proton / electron beams.…”

Section: Introductionmentioning

confidence: 99%

Comparative investigation of recombination characteristics in proton and electron irradiated Si structures

Višniakov¹

2008

Lithuanian J. Phys.

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Comparative analysis of the carrier recombination and generation lifetime as well as reverse recovery durations (RR), dependent on electron and proton irradiation fluence, has been performed in float zone (FZ) silicon PIN diodes and wafer structures. These investigations have been devoted to determination of the dominant radiation defects and their depth distribution, to design the irradiation technology steps for PIN diodes with fast switching rates. The samples were irradiated with 2 MeV protons and 5-10 MeV electrons with fluences in the range of 7·1012 -7·10 14 p/cm 2 as well as 2.4·10 12 -5.2·10 13 e/cm 2 , respectively. Carrier decay constituents and values of recombination lifetime have been evaluated by employing a microwave probed photoconductivity transient technique (MW-PC), while deep levels spectra ascribed to generation lifetime variations have been examined by exploiting capacitance deep level transient spectroscopy (C-DLTS). Recombination lifetime decreases from several microseconds to few nanoseconds in the proton irradiated Si, while DLTS spectra show an increase of the amplitude of a DLTS peak at 170 K with irradiation fluence. This peak dominates within DLTS spectra where peaks at 90, as well as at 140 and 250 K, ascribed to vacancy attributed defects, are also present. Recombination lifetime decreases from tens to few microseconds, while vacancy ascribed defects dominate in DLTS spectra under increase of irradiation fluence for the same material irradiated with electrons. Sharply inhomogeneous depth distribution of recombination lifetime in proton irradiated samples has been revealed from the cross-sectional scans of the excess carrier lifetime measured by MW-PC technique. This indicates a formation of the δ-layer of enhanced recombination in vicinity of the p + -n junction of PIN diodes. Meanwhile, the recombination lifetime is nearly constant within depth of the electron irradiated Si samples. These characteristics correlate rather well with reverse recovery time constants of the same PIN diodes.

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67‐1: Comparison of In‐folding and Out‐folding Stress on Electrical Performance of Poly‐Si TFTs on Polyimide Substrate for Foldable AMOLED Display

Billah

Siddik

Kim

et al. 2022

Symp Digest of Tech Papers

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A comparison between cyclic out‐folding and in‐folding strain on flexible poly‐Si TFTs for foldable AMOLED display is reported. TFT under out‐folding stress exhibits severe degradation including positive threshold voltage (VTh) shift with unstable drain current (ID) than in‐folding, which is related to defect‐generation at poly‐Si grain‐boundary and justified using TCAD simulation. Stable low leakage current (<1 pA) after 30,000 mechanical folding cycles confirms the defect formation within poly‐Si and grain boundary protrusions. Electrical performance recovery using vacuum annealing after folding stress verifies the origin of electrical degradation as metastable traps generation.

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Reverse recovery characteristics and defect distribution in an electron-irradiated silicon p–n junction diode

Cited by 5 publications

References 8 publications

Anneal-induced variations of the recombination characteristics in 2 MeV proton irradiated Si structures

Anneal-induced variations of the recombination characteristics in 2 MeV proton irradiated Si structures

Comparative investigation of recombination characteristics in proton and electron irradiated Si structures

67‐1: Comparison of In‐folding and Out‐folding Stress on Electrical Performance of Poly‐Si TFTs on Polyimide Substrate for Foldable AMOLED Display

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