Review Of CD Measurement And Scatterometry

Thony, Philippe; Herisson, David; Henry, Daniel; Severgnini, Ermes; Vasconi, Mauro

doi:10.1063/1.1622499

Cited by 17 publications

(13 citation statements)

References 4 publications

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“…In measurement comparisons scatterometers typically show an excellent linearity to CD-SEM tools. In most cases however, systematic offsets between both systems of the order of few 10 nm [2][3][4] are observed. These systematic deviations may be connected both to the applied measurement methods and tools, to necessary approximations in the modelling and data analysis and to imperfections and limitations of the target structures.…”

Section: Introductionmentioning

confidence: 90%

First steps towards a scatterometry reference standard

Bodermann

Hansen²,

Burger³

et al. 2012

SPIE Proceedings

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Supported by the European Commission and EURAMET, a consortium of 10 participants from national metrology institutes, universities and companies has recently started a joint research project with the aim of overcoming current challenges in optical scatterometry for traceable linewidth metrology and to establish scatterometry as a traceable and absolute metrological method for dimensional measurements. This requires a thorough investigation of the influence of all significant sample, tool and data analysis parameters, which affect the scatterometric measurement results. For this purpose and to improve the tool matching between scatterometers, CD-SEMs and CD-AFMs, experimental and modelling methods will be enhanced. The different scatterometry methods will be compared with each other and with specially adapted atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurement systems. Additionally novel methods for sophisticated data analysis will be developed and investigated to reach significant reductions of the measurement uncertainties in critical dimension (CD) metrology. To transfer traceability to industrial applications of scatterometry an important step and one final goal of this project is the realisation of different waferbased reference standard materials for calibration of scatterometers. The approaches to reach these goals and first design considerations and preliminary specification of the scatterometry standards are presented and discussed.

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Section: Introductionmentioning

confidence: 90%

First steps towards a scatterometry reference standard

Bodermann

Hansen²,

Burger³

et al. 2012

SPIE Proceedings

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“…Both the techniques are based on an inverse approach where the measured optical spectra are fitted by assuming a multiparameter optical model and calculating the diffraction from a periodic grating. 3 The precision and accuracy of the results depend on the model, sensitivity of parameters to small changes, and incorporation of several nonidealities, such as signal noise. Often, complete characterization of a complex structure requires more data than available from traditional SE, resulting in unresolved correlation between variables.…”

Section: Introductionmentioning

confidence: 99%

Characterization of e-beam patterned grating structures using Mueller matrix based scatterometry

Muthinti

Peterson²,

Bonam

et al. 2013

J. Micro/Nanolith. MEMS MOEMS

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Scatterometry is one of the most useful metrology methods for the characterization and control of critical dimensions and the detailed feature shape of periodic structures found in the microelectronics fabrication processes. Spectroscopic ellipsometry (SE) and normal incidence reflectometry (NI)-based scatterometry are widely used optical methodologies for metrology of these structures. Evolution of improved optical hardware and faster computing capabilities led to the development of Mueller matrix (MM)-based scatterometry (MMS). Unlike SE and NI, MM data provides complete information about the optical reflection and transmission of polarized light interacting with a sample. This gives MMS an advantage over traditional SE scatterometry due to the ability to characterize samples that have anisotropic optical properties and depolarize light. In this paper, we present the study of full MM (16-element) scatterometry over a wide spectral range from 245 to 1700 nm on a series of one-dimensional, two-dimensional symmetric, and asymmetric grating structures. A series of laterally complex nanoscale structures were designed and fabricated using a stateof-the-art e-beam patterning. Spectroscopic MM and SE data were collected using a dual rotating compensator ellipsometer. Commercial modeling software based on the rigorous coupled-wave approximation was used to precisely calculate the critical dimensions. Results from MMS were compared with scanning electron microscopy.

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“…All these techniques are quite long and difficult to systematically apply in a production environment even if many progresses have been made in particular in the automation. In this respect, optical techniques always have big advantages and the development of scatterometry or Optical Digital Profilometry (ODP) has been proven by most suppliers to be an efficient solution for CD metrology at the 90nm node (6). ODP is the technique of choice for industry almost for the next nodes (7).…”

Section: Introductionmentioning

confidence: 99%

Optical Fourier transform scatterometry for LER and LWR metrology

et al. 2005

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We present an innovating instrument based on optical Fourier transform (OFT) capable to measure simultaneously the specular and non specular diffraction pattern of sub-micronic periodic structures. The sample is illuminated at fixed wavelength (green laser) versus a large angular aperture both in incidence (0 to 80°) and azimuth (0 to 180°). In the present paper we focus on the possibility to measure line edge roughness (LER) and line width roughness (LWR) using this new technique. To understand the problem, different gratings with artificial periodic LER and LWR roughness have been fabricated and characterized precisely by atomic force microscopy (AFM). Different light scattering measurements have been performed using the OFT instrument with different illuminations in order to understand precisely the optical behavior of these systems. We show that we can distinguish LER and LWR by measuring simultaneously the diffracted contributions coming from the grating and from the periodic roughness. In phase LER with small LWR does not give first order diffraction contribution for the periodic roughness. In contrast, LER in opposite phase with large LWR gives a strong contribution for the first order of diffraction of the periodic roughness. In any case, the sensitivity to LER and LWR is better than 5nm for 500nm period gratings measured at 532nm. This result can be extended to samples with real LER and LWR. It shows without ambiguity that simultaneous measurement of the specular and diffracted light diffraction patterns is necessary to extract separately the two parameters.

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Review Of CD Measurement And Scatterometry

Cited by 17 publications

References 4 publications

First steps towards a scatterometry reference standard

First steps towards a scatterometry reference standard

Characterization of e-beam patterned grating structures using Mueller matrix based scatterometry

Optical Fourier transform scatterometry for LER and LWR metrology

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