Rewritable ferroelectric vortex pairs in BiFeO3

Li, Yang; Jin, Yaming; Lü, Xiaomei; Yang, Jinn‐Chuang; Chu, Ying Hao; Huang, Fengzhen; Zhu, Jinsong; Cheong, S.-W.

doi:10.1038/s41535-017-0047-2

Cited by 70 publications

(34 citation statements)

References 36 publications

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“…Experimental design to create and separate a topological pair Electric fields induced by a tip create stray fields around the tip along concentric inward directions when a negative bias is applied to the tip. [16][17][18][19][20][21][22] Figure 2a shows a schematic of local polarization switching. Applying a negative bias to a point in a uniformly polarized medium induces a ferroelectric vortex underneath the tip.…”

Section: Sample Characterizationmentioning

confidence: 99%

“…15 Recently, Li et al demonstrated the creation of ferroelectric vortex-antivortex pairs using a local electric field. 16 They successfully observed the electric formation of topological networks consisting of two or three vortex-antivortex pairs and temporal evolution of their configurations. Despite the achievement, it remains a tantalizing challenge to create, observe, and manipulate a single vortex-antivortex pair from the aspect of a low-lying elementary excitation.…”

Section: Introductionmentioning

confidence: 99%

“…In this context, devising a way to manipulate the positions of the vortex and the antivortex is beneficial for artificially controlling topological defects beyond the discovery of static textures. A tip-induced electric field is a suitable tool for generating vortices in uniform ferroelectrics [16][17][18][19] and deterministically controlling the ferroelectric states. [16][17][18][19][20][21][22] In this paper, we demonstrate the creation of a single vortex-antivortex pair in ferroelectrics and the separation of the pair through tip-induced electric fields in a topologically trivial ferroelectric thin film of BiFeO 3 (BFO) deposited with a bottom electrode SrRuO 3 (SRO) on a (110) O -oriented DyScO 3 (DSO) substrate (where the subscript " O " represents the orthorhombic index).…”

Section: Introductionmentioning

confidence: 99%

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Artificial creation and separation of a single vortex–antivortex pair in a ferroelectric flatland

et al. 2019

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Topological defects have received much attention due to their stability against perturbations and potential applications in nonvolatile high-density memory. Topologically non-trivial textures can be compelled by constraints on boundary condition, geometrical structure, and curved space. Ferroelectric vortices have been realized in various finite-sized nanostructures that allow such constraints to be produced. However, manipulation of topological excitations in otherwise topologically trivial flat ferroelectrics remains a tantalizing challenge. Here we show that a vortex-antivortex pair can be produced by a momentary electric pulse using a tip in a usual Kittel's stripe domain of a BiFeO 3 thin film. Moreover, we demonstrate that the distance between the paired vortex and antivortex can be controlled by dragging the biased tip. The spatial distribution of the local piezoresponse vectors is directly mapped using angle-resolved piezoresponse force microscopy and analyzed by local winding number calculation. Our findings offer a useful concept for the control of topological defects in ferroelectrics.

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Section: Sample Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Artificial creation and separation of a single vortex–antivortex pair in a ferroelectric flatland

et al. 2019

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“…If these additives are well understood and controlled, the FEDW conduction as a novel functionality would be offered an additional degree of freedom. In fact, recent studies did reveal some unique exotic domains such as bubble, flux‐closure vortex, and center‐type topological states in nanoscale ferroelectrics, which also add more ingredients into the enthralling DW functionalities. In view of the tantalizing properties in both domain wall conductance and nanoferroelectrics, it is highly promising and extremely important to look into the FEDW conduction behaviors in size‐confined nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nanoislands

Tian

Yang

Xiao

et al. 2019

Adv Funct Materials

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Conductive ferroelectric domain walls-ultranarrow configurable conduction paths-have been considered as essential building blocks for future programmable domain wall electronics. For applications in high-density devices, it is imperative to explore the conductive domain walls in small confined systems, while earlier investigations have hitherto focused on thin films or bulk single. Here, an observation and manipulation of conductive domain walls confined within small BiFeO 3 nanoislands aligned in highdensity arrays are demonstrated. Using conductive atomic force microscopy, various types of conductive domain walls, including the head-to-head charged domain walls (CDWs), zigzag domain walls, and typical 71° head-totail neutral domain walls (NDWs), are distinctly visualized. The CDWs exhibit remarkably enhanced metallic conductivity with current of ≈nA order in magnitude and 10 4 times larger than that inside domains (0.01-0.1 pA), while the semiconducting NDWs allow much smaller current (≈10 pA) than the CDWs. The substantial difference in conductivity for dissimilar walls enables manipulations of various wall conduction states for individual addressable nanoislands via electrical tuning of domain structures. A controllable writing of four distinctive states in individual nanoislands can be achieved, showing application potentials for developing multilevel high-density memories.

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“…2Ha-TaSe 2 also undergoes an ICCDW phase transition at T ICDW ≈ 122 K, then locksin to a commensurate-charge-density waves (CCDW) state at T CCDW ≈ 90 K [14,15], and finally to a superconducting state at T c ≈ 0.14 K [16,17]. T c will increase with S or Te doping [18,19], or Ni or Pd intercalations [20,21], or under pressure [9]. 3R-TaSe 2 is not stable [22], but with Te, Mo or W doping, it becomes stable and superconducting at T C of about 2 K [23].…”

Section: Introductionmentioning

confidence: 99%

Superconductivity in tantalum self-intercalated 4Ha-Ta_1.03Se₂

Bai

Wang

Yang

et al. 2018

J. Phys.: Condens. Matter

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TaSe$_2$ has several different polytypes and abundant physical properties such as superconductivity and charge density waves (CDW), which had been investigated in the past few decades. However, there is no report on the physical properties of 4$Ha$ polytype up to now. Here we report the crystal growth and discovery of superconductivity in tantalum self-intercalated 4$Ha$-Ta$_{1.03}$Se$_2$ single crystal with a superconducting transition onset temperature $T_{\rm c}$ $\approx$ 2.7 K, which is the first observation of superconductivity in 4$Ha$ polytype of TaSe$_2$. A slightly suppressed CDW transition is found around 106 K. A large $\mu_0H_{\rm c2}/T_{\rm c}$ value of about 4.48 is found when magnetic field is applied in the $ab$ plane, which probably results from the enhanced spin-orbit coupling(SOC). Special stacking faults are observed, which further enhance the anisotropy. Although the density of states at the Fermi level is lower than that of other polytypes, $T_{\rm c}$ remains the same, indicating the stack mode of 4$Ha$ polytype may be beneficial to superconductivity in TaSe$_2$.

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Rewritable ferroelectric vortex pairs in BiFeO3

Cited by 70 publications

References 36 publications

Artificial creation and separation of a single vortex–antivortex pair in a ferroelectric flatland

Artificial creation and separation of a single vortex–antivortex pair in a ferroelectric flatland

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nanoislands

Superconductivity in tantalum self-intercalated 4Ha-Ta_1.03Se₂

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Rewritable ferroelectric vortex pairs in BiFeO3

Cited by 70 publications

References 36 publications

Artificial creation and separation of a single vortex–antivortex pair in a ferroelectric flatland

Artificial creation and separation of a single vortex–antivortex pair in a ferroelectric flatland

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nanoislands

Superconductivity in tantalum self-intercalated 4Ha-Ta1.03Se2

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Product

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Superconductivity in tantalum self-intercalated 4Ha-Ta_1.03Se₂