RF &amp; linearity distortion sensitivity analysis of DMG-DG-Ge pocket TFET with hetero dielectric

Priyadarshani, Kumari Nibha; Singh, Sangeeta; Naugarhiya, Alok

doi:10.1016/j.mejo.2020.104973

Cited by 30 publications

(7 citation statements)

References 22 publications

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“…Non-linearity and distortion analysis.-Figure 6 shows the transconductance (g m ) and high-order harmonics (g m2 and g m3 ) for the different gate lengths. Regarding the definition of g m , the parameters of high-order harmonics can be defined as following relation: 14 g I V g n , 2, 3, .... 10…”

Section: Results and Argumentsmentioning

confidence: 99%

“…There are other main parameters in the terms of VIP2, VIP3, IIP3, IMD3 and 1-dB compression point addressing both the nonlinearity and the RF intermodulation distortion of the devices formulated as following relation: 14 VIP g g 2 4 11 where in the equations above, R S = 50 is assumed for most of the RF applications. For high linearity and low distortion, VIP2 and VIP3 must be as high as possible.…”

Section: Results and Argumentsmentioning

confidence: 99%

“…silicon. [14][15][16] Considering the aforementioned explanations, there is no report on the non-linearity and RF distortion cheek of a GNRFET device down to 10 nm to the best our knowledge. The work is aimed to open a useful path for the researchers to achieve high reliability for the GNRFET devices in the RF applications.…”

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confidence: 99%

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Non-Linearity and RF Intermodulation Distortion Check of Ultrascale GNRFET Device Using NEGF Technique to Achieve the Highest Reliable Performance

Anvarifard¹

2021

ECS J. Solid State Sci. Technol.

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The non-linearity and radio-frequency (RF) intermodulation distortion in ultrascale graphene-nanoribbon-field-effect-transistor (GNRFETs) is reported. The important figure of merits related to the non-linearity and the RF distortion in terms of transconductance, high-order harmonics, VIP2, VIP3, IIP3, IMD3 and 1-dB compression point have been explored to evaluate the power of ultrascale GNRFET device in RF high-performance applications. Also, the RF important parameters in the cases of total capacitance, cut-off frequency, and transconductance frequency product have been monitored. This paper presents a useful manual to improve the GNRFET RF performance while maintaining high reliability. The influence of the structural parameters of GNRFET device, such as the gate length, gate oxide thickness, gate oxide material, and GNR index on the RF parameters and nonlinearity/RF intermodulation distortion have been investigated in order to determine the best setup for the ultrascale GNRFET device applicable in RF applications. The paper benefits from the numerical approach governed by a nonequilibrium-greenfunction coupled by a three-dimensional Poisson equation in a self-consistent manner. Also, because the ultrascale GNRFET (gate length smaller than 7.5 nm) has been analyzed, the position-energy dependent effective mass model is considered for more accurate simulation.

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Section: Results and Argumentsmentioning

confidence: 99%

Section: Results and Argumentsmentioning

confidence: 99%

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Non-Linearity and RF Intermodulation Distortion Check of Ultrascale GNRFET Device Using NEGF Technique to Achieve the Highest Reliable Performance

Anvarifard¹

2021

ECS J. Solid State Sci. Technol.

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“…There are other main parameters such as VIP2, IMD3, 1-dB compression point and TFP addressing the non-linearity and RF intermodulation distortion defined in equations below: [29][30][31] = [ ] VIP g g 2 4 18…”

Section: Numerical Schemementioning

confidence: 99%

A Ballistic Transport Nanodevice Based on Graphene Nanoribbon FET by Enhanced Productivity for Both Low-Voltage and Radio-Frequency Scopes

Anvarifard¹,

Ramezani²,

Ghoreishi³

2022

ECS J. Solid State Sci. Technol.

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The top performance in both the low-voltage and radio frequency (RF) scopes has been nominated for an unique nanodevice made from a graphene nanoribbon with an extremely short gate length (7.5 nm) in this study. Two distinct material engineering options were used, yielding some interesting outcomes. Due to the use of an ultrascale GNRFET in this study, the band structure non-linearity in the Dirac point and the energy-position dependent effective mass model for dual material gate architectures were examined for the first time. The NEGF formalism is used to carry out both the low-voltage and RF research using a three-dimensional (3D) Poisson equation. Low-voltage high performance has been validated by monitoring the key petameters in the terms of on current (Ion), off current (Ioff), Ion/Ioff ratio, subthreshold swing, and drain induced barrier lowering (DIBL) for the proposed device as compared to other structures under the study. The RF performance is examined by evaluation of essential parameters in the cases of parasitic gate capacitance, intrinsic cut-off frequency, intrinsic delay time, and transconductance. In addition, the performance of non-linearity and RF intermodulation distortion has been analyzed for all devices under investigation in order to attain the best attitude toward the suggested device.

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“…Multi-Gate Metal Oxide Semiconductor Field Effect Transistors (MG-MOSFET) such as Double Gate FET have considered one of the most promising contenders in the semiconductor industry [1][2][3][4]. The progressive downscaling of multi-gate MOS structures has led to many problems concerning their electrical and thermal performance [5][6][7][8][9].…”

Section: ) Introductionmentioning

confidence: 99%

Optimization of Heat Transfer Process in Double Gate MOSFET Using Modified BDE Model

Ghedira

Nasri

Mera

2021

Preprint

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In this paper, a nonlinear electrical model is derived and is used to calculate the electric field and the current density. To corroborate our electrical model, it was compared to TCAD simulator. It was shown that the proposed model captures the current density with a good degree of agreement with TCAD simulator. The electrical model is given by the modified Drift-Diffusion (D-D) model coupled with the Ballistic-Diffusive Equation (BDE) which is able to predict the heat transfer phenomenon in the nanoscale regime. The thermal device performance is then investigated by varying device parameters including gate and drain biases with implementation of different gate dielectric to explore its response on thermal characteristics. It was further shown that the proposed electro-thermal model is able to predict the nano heat conduction in (DG) nanostructure devices. In addition, it is shown that the heat flux process could be controlled by adjusting the drain and gate voltages.

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RF & linearity distortion sensitivity analysis of DMG-DG-Ge pocket TFET with hetero dielectric

Cited by 30 publications

References 22 publications

Non-Linearity and RF Intermodulation Distortion Check of Ultrascale GNRFET Device Using NEGF Technique to Achieve the Highest Reliable Performance

Non-Linearity and RF Intermodulation Distortion Check of Ultrascale GNRFET Device Using NEGF Technique to Achieve the Highest Reliable Performance

A Ballistic Transport Nanodevice Based on Graphene Nanoribbon FET by Enhanced Productivity for Both Low-Voltage and Radio-Frequency Scopes

Optimization of Heat Transfer Process in Double Gate MOSFET Using Modified BDE Model

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