RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors

Gao, Jianjun

doi:10.1049/sbew027e

Cited by 41 publications

(28 citation statements)

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“…A typical double heterojunction -doped PHEMT structure in shown in Figure 1. 2 The PI-gate PHEMT has been used here, which has two gate fingers. Figure 2 shows the conventional small-signal equivalent circuit model for HEMTs, 3 this equivalent circuit model can be divided into two parts: (1) The intrinsic elements which are consist of g m , g ds , C gs , C gd , C ds , R i , and (2) The extrinsic elements which are consist of L g , L d ,…”

Section: Equivalent Circuit Modelmentioning

confidence: 99%

Device Modeling of High Electron Mobility Transistors: Small Signal and Noise Modeling

Shen¹,

Chen²,

Sun³

et al. 2015

j comput theor nanosci

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The small signal equivalent circuit model and noise model for high electron mobility transistors (HEMT) are introduced in this paper. The corresponding model parameter extraction methods are also discussed. Three most common used measurement techniques including S-parameter, noise parameter and harmonic performance are described. The signal and noise de-embedding methods for microwave components and circuits in on wafer and coaxial measurement systems are discussed more detail.

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Section: Equivalent Circuit Modelmentioning

confidence: 99%

Device Modeling of High Electron Mobility Transistors: Small Signal and Noise Modeling

Shen¹,

Chen²,

Sun³

et al. 2015

j comput theor nanosci

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“…Therefore, transconductance g m and output conductance g ds can be obtained as below [14]: 2. Training Algorithm.…”

Section: Proposed Modeling Approachmentioning

confidence: 99%

Neuro-space mapping-based DC modeling for 130-nm MOSFET

Han

Cheng

et al. 2010

Int J RF and Microwave Comp Aid Eng

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In this article, two approaches for modeling DC characteristics for MOSFET based on neuro-space mapping (SM) are proposed. The first approach makes use of classical neuro-SM technology, while the second combines neuro-SM with prior knowledge input and source difference method. The formulas for obtaining the transconductance and output conductance in two approaches are derived. The I À V characteristics as well as their conductances obtained by the formulas in two approaches are compared to the measured data. Experimental results, which confirm the validity of our approaches, are also presented. V C 2010Wiley Periodicals, Inc. Int J RF and Microwave CAE 20:587-592, 2010.

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“…A fter a successful analytical approach presented by Dambrine et al , a number of improved direct extraction methods for the high electron mobility transistors have been successfully demonstrated to achieve complete analysis of the active microwave circuits. Among them, a method proposed by Tayrani et al has been one of the most favored direct extraction methods to date determining the extrinsic inductances and resistances, and it was further improved by Brady et al using a modified cold FET approach.…”

Section: Introductionmentioning

confidence: 99%

A directional method of extrinsic resistance determination for millimeter‐wave small‐signal model

Nguyen

Kim

2014

Micro & Optical Tech Letters

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We propose in this study an approach to highly reliable extraction scheme for the extrinsic resistances of the W‐band metamorphic high electron mobility transistors. This method uses a directional search technique to determine the channel resistance of the device under zero‐biased condition by minimizing the fitting errors between hot field effect transistor model S‐parameters and measurements. From this, the extraction accuracies of the extrinsic resistances and all intrinsic parameters are greatly improved. Extractions for the parasitic elements are performed at four different gate widths (2 × 10 µm, 2 × 20 µm, 2 × 30 µm, and 2 × 70 µm), and we achieved the most accurate parameter prediction among the small‐signal models reported to date with an effective fitting error of 10.69% in a frequency range of 0.5–110 GHz. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2609–2612, 2014

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RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors

Cited by 41 publications

References 0 publications

Device Modeling of High Electron Mobility Transistors: Small Signal and Noise Modeling

Device Modeling of High Electron Mobility Transistors: Small Signal and Noise Modeling

Neuro-space mapping-based DC modeling for 130-nm MOSFET

A directional method of extrinsic resistance determination for millimeter‐wave small‐signal model

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