RF Characteristics of a High-Performance, 10-fF/&amp;lt;tex&amp;gt;$muhbox m^2$&amp;lt;/tex&amp;gt;Capacitor in a Deep Trench

Cai, Will; Shastri, S.; Grivna, Gordon; Wu, Yi; Loechelt, G. H.

doi:10.1109/led.2004.831195

Cited by 11 publications

(7 citation statements)

References 9 publications

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“…The resulting specific capacitance of the ONO20 SilCap reaches the impressive value of 12.1 fF μm −2 . This is significantly higher than that reported for other trench capacitors [8] and even two to three times higher than the specific capacitance achieved by a planar MIM capacitor which implements cost-intensive high-k dielectric [9].…”

Section: Capacitor Structure Descriptionmentioning

confidence: 59%

Simulation and modelling of a high-performance trench capacitor for RF applications

Büyüktas

Geiselbrechtinger

Decker

et al. 2009

Semicond. Sci. Technol.

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The necessity for exact modelling and simulation data of the electrical characteristics of passive on-chip devices has become more and more important. The electrical performance of RF circuits is predominantly restricted by the passives. In this work the RF simulation and characterization for a new trench capacitor in a low loss environment are presented for the first time. The excellent accordance of the modelling data with the measured RF characteristics of this so-called SilCap (silicon capacitor) is shown. An analytical model has been developed which permits the exact circuit simulation of all relevant electrical quantities. The device simulation enables the optimization of the SilCap device geometries.

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Section: Capacitor Structure Descriptionmentioning

confidence: 59%

Simulation and modelling of a high-performance trench capacitor for RF applications

Büyüktas

Geiselbrechtinger

Decker

et al. 2009

Semicond. Sci. Technol.

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“…8 is achieved with the same consumed lateral area and the same dielectric material and thickness. The measured results show at least 3 × larger capacitance density compared to other "dry-etched" trench capacitor work reported in the literature [17]- [19]. The frequency responses of four selected trench-refilled capacitors are characterized and shown in Fig.…”

Section: Measurementmentioning

confidence: 72%

“…This proposed process requires four masks and a number of film depositions, exactly twice as many as the first process, providing ∼2 × larger capacitance value. The described processes are compatible with Analog Device's Silicon on Insulator-Microelectromechanical Systems (SOI-MEMS) process [17], [18] and can be integrated with CMOS electronics as a sequence of pre-CMOS steps. In order to integrate these capacitors with a CMOS, the pads can be easily routed out to the die's side and a passivation layer can be deposited.…”

Section: Fabricationmentioning

confidence: 99%

High-Density Embedded Deep Trench Capacitors in Silicon With Enhanced Breakdown Voltage

Johari

Ayazi

2009

IEEE Trans. Comp. Packag. Technol.

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This paper reports on the design, implementation, and characterization of high-density trench-refilled capacitors in complementary metal-oxide-semiconductor (CMOS) grade silicon (1-10 cm). High aspect ratio trench-refilled capacitors offer a capacitance density improvement of three orders of magnitude compared to thin-film capacitors with the same die area and dielectric thickness. Also, dielectric materials such as low-pressure chemical vapor deposition (LPCVD) silicon oxide and silicon nitride are utilized to enhance the breakdown voltage of these devices. The high aspect ratio polysilicon and single crystal silicon process was utilized to implement these capacitors, giving a gap aspect ratio of >4000. This ultrahigh vertical capacitance area achieves an ultralarge capacitance density without requiring thin-or high-k dielectric material. High-value capacitors of values ranging from 40 nF to 4 μF with capacitance density of 58 (nF/mm 2 ) were implemented in silicon as arrays of 170 μm-deep trenches. LPCVD silicon dioxide and silicon nitride were employed as dielectric materials to provide robust deposition inside the high aspect ratio trenches. Trench-refilled capacitors show quality factors (Q) of 230 and 8, respectively, at 45 nF and 4 μF capacitances. The breakdown voltage in trenchrefilled capacitors with 35 nm-thick Si 3 N 4 is recorded to be as high as 17-V, which is ∼4x to 10x larger than that of BaTiO 3 and PbZr x x x Ti 1 1 1− − −x x x O 3 3 3 (PZT) thin-film capacitors with the same dielectric thickness. Furthermore, the capacitances were measured over a temperature range of 25 to 155 • C, showing less than 1.8% variation in 45 nF devices. This implies that trenchrefilled capacitors are free from the very strong temperature sensitivity exhibited by most high-k materials.

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“…Compared with other integrated capacitor technologies, such as the polysilicon/silicon-based trench capacitors [7], [8] and crown-shaped capacitors [9], or the native intrametal lateral flux capacitors [10], [11] (also known as metal-oxide-metal capacitors), MIM capacitors offer lower resistive loss, lower substrate coupling noise, no charge depletion-induced voltage dependence, higher self resonance, and moderately high capacitance density [2]. However, as the capacitance density requirements stated in the latest 2011 International Roadmap for Semiconductors (ITRS) [12] continue to increase, further thinning of the dielectric layer tends to lead to excessive leakage currents and dielectric loss, thus either opting for high-k dielectric materials [13]- [16] or migrating to multilayer stacked structures [2] cannot be avoided.…”

Section: Increased Multilayer Fabrication and Rfmentioning

confidence: 99%

Increased Multilayer Fabrication and RF Characterization of a High-Density Stacked MIM Capacitor Based on Selective Etching

Tseng

Xie

2014

IEEE Trans. Electron Devices

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This paper presents the fabrication and characterization of a high-density multilayer stacked metal-insulator-metal (MIM) capacitor based on a novel process of depositing the MIM multilayer on pillars followed by polishing and selective etching steps to form a stacked capacitor with merely three photolithography steps. In this paper, the pillars were made of glass to prevent substrate loss, whereas an oxide-nitride-oxide dielectric was employed for lower leakage, better voltage/frequency linearity, and better stress compensation. MIM capacitors with six dielectric layers were successfully fabricated, yielding capacitance density of 3.8 fF/μm 2 , maximum capacitance of 2.47 nF, and linear and quadratic voltage coefficients of capacitance below 21.2 ppm/V and 2.31 ppm/V 2 . The impedance was measured from 40 Hz to 3 GHz, and characterized by an analytically derived equivalent circuit model to verify the radio frequency applicability. The multilayer stacking-induced plate resistance mismatch and its effect on the equivalent series resistance (ESR) and effective capacitance was also investigated, which can be counteracted by a corrected metal thickness design. A low ESR of 800 m was achieved, whereas the self-resonance frequency was >760 MHz, successfully demonstrating the feasibility of this method to scale up capacitance densities for high-quality-factor, high-frequency, and large-value MIM capacitors.Index Terms-Capacitance density, equivalent series resistance (ESR), metal-insulator-metal (MIM) capacitor, multilayer stack, polishing, radio frequency (RF) passive device model, selective etching.

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RF Characteristics of a High-Performance, 10-fF/<tex>$muhbox m^2$</tex>Capacitor in a Deep Trench

Cited by 11 publications

References 9 publications

Simulation and modelling of a high-performance trench capacitor for RF applications

Simulation and modelling of a high-performance trench capacitor for RF applications

High-Density Embedded Deep Trench Capacitors in Silicon With Enhanced Breakdown Voltage

Increased Multilayer Fabrication and RF Characterization of a High-Density Stacked MIM Capacitor Based on Selective Etching

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