RF distortion analysis with compact MOSFET models

Bendix, P.; Rakers, P.; Wagh, P.; Lemaître, L.; Grabinski, Wladek; McAndrew, Colin C.; Gu, Xiaoxiong; Gildenblat, G.

doi:10.1109/cicc.2004.1358719

Cited by 50 publications

(24 citation statements)

References 7 publications

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“…Fig. 2), passive mixers [17], and continuous time integrators. It should be noted that the capability of the PSP model to describe data such as that presented in Fig.…”

Section: Distortionmentioning

confidence: 99%

(Invited) The new CMC standard compact MOS model PSP: advantages for RF applications

Scholten

Smit

Vries

et al. 2008

2008 IEEE Radio Frequency Integrated Circuits Symposium

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“…Fig. 2), passive mixers [17], and continuous time integrators. It should be noted that the capability of the PSP model to describe data such as that presented in Fig.…”

Section: Distortionmentioning

confidence: 99%

(Invited) The new CMC standard compact MOS model PSP: advantages for RF applications

Scholten

Smit

Vries

et al. 2008

2008 IEEE Radio Frequency Integrated Circuits Symposium

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“…These include the regional nature of the model [7], lack of continuous derivatives at Vds=0 [8] and unphysical behavior of certain capacitances [9]. These issues are particularly problematic for analog and RF circuits.…”

Section: Next Generation Mosfet Modelsmentioning

confidence: 99%

Enhancing Productivity by Continuously Improving Standard Compact Models

Watts

2006

IEEE Custom Integrated Circuits Conference 2006

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The design of an integrated circuit requires the efforts of a large number of people with a wide range of skills. The compact model is a communication tool by which the designer of transistors, resistors and other circuit elements tells the designer of circuits how the circuit elements behave. Without this information the circuit design would be a trial and error process and modern electronics would be impossible. High quality, industry standard compact models enhance the productivity of the industry by enabling precise communication between any device design team, and any circuit design team, anywhere in the world.To be useful for leading edge design the compact model must keep up with the pace of semiconductor technology innovation. This is the great challenge for the Compact Model Council. It is only possible because the CMC creates collaboration between academics, semiconductor foundries, EDA vendors and circuit designers.

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“…While these models have continuous derivatives at V ds = 0V, and present qualitatively correct behavior for third order nonlinearity simulations [6], they exhibit other irregularities such as unrealistic transconductances or have implicit equations that are computationally intensive [1]. Furthermore these newer models are not always readily available to circuit designers in legacy processes.…”

Section: Introductionmentioning

confidence: 99%

A circuit-level model for accurately modeling 3rd order nonlinearity in CMOS passive mixers

Yuksel

Yang

Molnar

2014

2014 IEEE Radio Frequency Integrated Circuits Symposium

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Many MOSFET models have discontinuities in the 2nd derivative of their drain current with respect to their drain-source voltage. Because these discontinuities occur at V ds = 0V, they have little effect on simulations of active circuits, but matter when simulating transistors in deep triode, such as CMOS passive mixers. These discontinuities result in qualitatively incorrect simulations of the effects of third order nonlinearity, with the 3rd harmonic behaving proportional to the square of the input signal amplitude, A 2 , instead of A 3 . In this paper, we present a schematic-level modeling technique that can be easily implemented over any model that fails the Gummel Symmetry Test (e.g. BSIM4) without altering underlying physical equations. We then show how the model performs with respect to IM3 simulations ensuring correct magnitude and slope by comparing our model to measurements from an 8-phase passive mixer manufactured in a deep sub-micron process.

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RF distortion analysis with compact MOSFET models

Cited by 50 publications

References 7 publications

(Invited) The new CMC standard compact MOS model PSP: advantages for RF applications

(Invited) The new CMC standard compact MOS model PSP: advantages for RF applications

Enhancing Productivity by Continuously Improving Standard Compact Models

A circuit-level model for accurately modeling 3rd order nonlinearity in CMOS passive mixers

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