Articles you may be interested inHigh symmetric SrRuO3 (001) thin films: Perfectly lattice-matched electrodes for multiferroic BiFeO3 J. Appl. Phys. 113, 17D913 (2013); 10.1063/1.4795864Multiferroic and structural properties of BiFeO3 close to the strain induced phase transition on different substrates Fabrication of ferroelectric SrBi 2 Ta 2 O 9 capacitor films using plasma-assisted metalorganic chemical vapor deposition and their electrical properties xBiCoO 3 -͑1−x͒BiFeO 3 films were deposited by metalorganic chemical vapor deposition. Although the film composition changed with deposition temperature, the composition could be adjusted by varying the input source gas composition at 700°C. Moreover, adjusting the deposition time could change 0.16BiCoO 3 -0.84BiFeO 3 film thickness. The crystal symmetry changed from rhombohedral to tetragonal as the film thickness decreased for 0.16BiCoO 3 -0.84BiFeO 3 films grown on both ͑100͒SrTiO 3 and ͑100͒ c SrRuO 3 ʈ ͑100͒SrTiO 3 substrates, implying that the x value of the crystal symmetry boundaries between the tetragonal and rhombohedral structures changes with film thickness.